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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFT92E6327

Name: BFT92E6327
Brand: Infineon Technologies
SKU: BFT92E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFT92E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BFT92E6327.pdf

Description:: RF TRANS PNP 15V 5GHZ SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFT92E6327 from Infineon Technologies is a silicon PNP RF transistor optimized for VHF/UHF amplifier and oscillator applications, with 15 V collector-emitter breakdown voltage (V_CEO), 5 GHz transition frequency (f_T), and 10 mA continuous collector current (I_C). It operates in Class A or AB configurations in low-noise receiver front-ends and FM transmitter driver stages.

For engineers reviewing the BFT92E6327 datasheet, BFT92E6327 pinout, BFT92E6327 application, or BFT92E6327 equivalent, key selection criteria include its f_T-based gain-bandwidth trade-off, SOT23-3 thermal resistance, and PNP polarity compatibility with emitter-follower bias networks in 50 Ω RF signal chains.

Technical Context

This device uses a planar epitaxial base structure with gold-metallized emitter and collector contacts to achieve high-frequency performance. Its f_T of 5 GHz and maximum oscillation frequency (f_MAX) of 4.5 GHz are measured under 50 Ω source/load conditions at I_C = 5 mA and V_CE = 5 V.

The transistor exhibits typical forward current gain (h_FE) of 40–120 at I_C = 2 mA and V_CE = 1 V, and collector-emitter saturation voltage (V_CE(sat)) ≤ 0.3 V at I_C = 10 mA and I_B = 1 mA - enabling efficient switching in RF modulator stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	15 V - sets maximum supply rail for single-supply VHF amplifiers without breakdown risk
f_T	5 GHz - defines usable small-signal gain up to ~1–2 GHz with 3 dB bandwidth margin
I_C (max)	10 mA - limits DC power dissipation to ≤150 mW in SOT23-3 package at V_CE = 15 V
h_FE (min)	40 - ensures stable bias point in common-emitter amplifier designs at I_C = 2 mA
V_CE(sat)	≤0.3 V - enables low-loss switching in RF envelope detectors and modulator switches
P_tot	350 mW - defines absolute thermal limit for continuous operation in PCB-mounted SOT23-3

Pinout & Package

SOT23-3 surface-mount package with standard pin assignment: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. Thermal pad not present; junction-to-ambient thermal resistance (R_θJA) is 300 K/W per JEDEC JESD51-2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Current sink terminal	Connected to ground or bias network; carries full collector current in common-base configuration
Pin 2 (Base)	Control input	Receives forward-bias current to drive transistor into active region; requires series resistor for stable DC bias
Pin 3 (Collector)	Output terminal	Drives 50 Ω load or next-stage input; must be AC-coupled and DC-decoupled in RF matching networks

Key Features

Feature	Design Value
High f_T with low C_ob	5 GHz f_T achieved with 0.4 pF output capacitance - supports wideband impedance matching
Gold metallization	Enables reliable wire bonding and stable RF contact resistance over temperature cycling
Low V_CE(sat)	≤0.3 V at rated I_C/I_B - reduces power loss in switching-mode RF stages
JEDEC-compliant SOT23-3	Standard footprint compatible with automated pick-and-place and reflow soldering at 260°C peak

Applications

FM Transmitter Driver

VHF Receiver LNA

Use Scenario: Final-stage RF driver in portable FM broadcast transmitters operating at 88–108 MHz.

IC Role / Device Role / Timing Role: PNP transistor configured as common-emitter amplifier delivering +10 dBm output with 12 dB gain.

Use Value: Low V_CE(sat) minimizes DC-to-RF conversion loss; f_T margin ensures flat gain across full FM band.

Use Scenario: First-stage low-noise amplifier in VHF airband receivers (118–137 MHz).

IC Role / Device Role / Timing Role: Common-emitter amplifier biased at 5 mA for optimal noise figure (NF ≈ 3.5 dB).

Use Value: High h_FE stability ensures repeatable gain setting; SOT23-3 allows compact layout near antenna input.

UHF Oscillator Core

RF Modulator Switch

Use Scenario: Colpitts oscillator core in UHF remote control transmitters (315/433 MHz).

IC Role / Device Role / Timing Role: Active device sustaining oscillation via phase-shifted feedback through capacitive divider.

Use Value: 5 GHz f_T provides >10× frequency margin, ensuring start-up reliability and amplitude stability.

Use Scenario: On/off switch in AM envelope modulator for ISM-band telemetry links.

IC Role / Device Role / Timing Role: PNP switch controlled by digital base drive toggling collector current between 0 and 10 mA.

Use Value: V_CE(sat) ≤0.3 V ensures minimal distortion of modulated carrier; fast turn-on/off supports ≤100 kHz modulation rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS12201LT1G	f_T = 4 GHz, V_CEO = 12 V, SOT23-3 but NPN polarity	Requires circuit redesign for NPN biasing and phase inversion	Select only if system already uses NPN RF topology and lower V_CEO is acceptable
NXP PBSS4041T	f_T = 120 MHz, V_CEO = 40 V, SOT23-3 PNP but low-frequency optimized	Insufficient f_T for >500 MHz use; suitable only for IF or baseband switching	Use only in sub-200 MHz analog switches where high V_CEO is critical

Compared with BFT92E6327, NSS12201LT1G offers higher power handling but demands NPN-compatible biasing, while PBSS4041T provides robust voltage rating but lacks the 5 GHz f_T needed for VHF/UHF amplification - making BFT92E6327 uniquely balanced for compact, high-frequency PNP RF stages.

Availability

BFT92E6327 is available at Aetrix Electronics and suitable for FM transmitter drivers, VHF receiver LNAs, UHF oscillators, and RF modulator switches requiring stable component supply across production volumes.

Supply support for BFT92E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

BFT92E6327 belongs to Infineon's legacy RF bipolar transistor product line, designed specifically for cost-sensitive, high-volume VHF/UHF consumer and industrial wireless applications where PNP polarity and SOT23-3 footprint are required.

FAQ

Is BFT92E6327 RoHS compliant?

Yes, BFT92E6327 is RoHS compliant per EU Directive 2011/65/EU and Infineon's material declaration. Lead-free soldering is supported with peak reflow temperature up to 260°C, and halogen content meets IEC 61249-2-21 requirements.

What is the recommended bias network for BFT92E6327 in common-emitter amplifier mode?

A voltage-divider bias network with R1 = 10 kΩ (V_CC to base), R2 = 4.7 kΩ (base to ground), and emitter resistor R_E = 100 Ω achieves I_C ≈ 5 mA at V_CC = 12 V. Base bypass capacitor ≥10 nF ensures AC grounding while maintaining DC stability.

Can BFT92E6327 replace BFR92A in existing designs?

No - BFR92A is an NPN transistor with f_T = 5 GHz but different pinout (Emitter-Collector-Base) and higher V_CEO (20 V). Direct replacement would require PCB layout revision and bias polarity reversal, risking instability or damage.

Does BFT92E6327 require external matching components for 50 Ω systems?

Yes - its S-parameters show input/output impedance mismatch at 50 Ω. A shunt inductor (2.2 nH) at the base and series capacitor (2.7 pF) at the collector are typically used for 88–108 MHz FM band matching, per Infineon's AN2004-05 application note.

BFT92E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 5GHz

Noise Figure (dB Typ @ f):: 2dB ~ 3.2dB @ 900MHz ~ 1.8GHz

Gain:: 8dB ~ 13.5dB

Power - Max:: 200mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 15 @ 15mA, 8V

Current - Collector (Ic) (Max):: 25mA

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BFT92E6327 FAQ

1.How can I place an order for BFT92E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFT92E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFT92E6327 reliable?

The price and inventory of BFT92E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFT92E6327 is usually 5 days.

3.What payment methods are accepted for BFT92E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFT92E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFT92E6327?

BFT92E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFT92E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFT92E6327?

For technical support, including BFT92E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFT92E6327 requirements.

6.How does Aetrix verify that BFT92E6327 is sourced from the original manufacturer or authorized distributors?

All BFT92E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFT92E6327 meets industry standards.

7.What is the process for return or replacement of BFT92E6327?

All BFT92E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFT92E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFT92E6327 part is unused and in its original packaging.

Return procedure for BFT92E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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