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NXP Semiconductors BFT93,215

Part No.:
BFT93,215
Manufacturer:
NXP Semiconductors
Category:
Bipolar RF Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBFT93,215.pdf
Description:
RF TRANS PNP 12V 5GHZ TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,214

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Product details

Overview

BFT93 from NXP Semiconductors is a PNP silicon RF transistor in SOT23 package, designed for 5 GHz wideband amplification. It delivers 16.5 dB maximum unilateral power gain at 500 MHz, 2.4 dB noise figure, and 5 GHz transition frequency (fT), with −12 V VCEO, −35 mA IC, and 300 mW Ptot. It is used in aerial amplifiers, spectrum analyzers, and radar front-ends where low intermodulation distortion and high-frequency linearity are critical.

For engineers reviewing the BFT93 datasheet, BFT93 pinout, BFT93 application, or BFT93 equivalent, key selection criteria include its PNP polarity, SOT23 thermal resistance (Rth j–s = 260 K/W), fT-based bandwidth capability, noise performance at 500 MHz, and compatibility with 75 Ω RF systems requiring Vo = 300 mV under −60 dB DIN intermodulation test conditions.

Technical Context

The BFT93 operates as a high-frequency PNP amplifier with optimized emitter-base and collector-base junction capacitances (Ce = 1.8 pF, Cc = 0.95 pF) to sustain broadband response up to 5 GHz. Its low feedback capacitance (Cre = 1 pF) and high fT enable stable unilateral gain behavior in wideband RF stages.

It is characterized at Tj = 25 °C with fixed bias conditions: VCE = −5 V, IC = −30 mA for GUM and fT, and IC = −10 mA for noise figure optimization. Thermal design must respect Tj ≤ 175 °C and solder-point temperature Ts ≤ 95 °C per IEC 134 limiting values.

Key Specifications

ParameterValue and Actual Design Meaning
fT5 GHz - defines usable small-signal bandwidth ceiling for amplifier design
GUM16.5 dB - maximum available gain at 500 MHz with matched input/output
F2.4 dB - noise figure at 500 MHz, critical for receiver front-end sensitivity
VCEO−12 V - maximum safe collector-emitter voltage under open-base condition
Ptot300 mW - total dissipation limit up to 95 °C solder-point temperature
Cre1 pF - feedback capacitance determining stability margin in common-emitter configuration
Rth j–s260 K/W - thermal resistance from junction to soldering point, guiding heatsinking requirements

Pinout & Package

Package: Plastic surface-mounted SOT23 (TO-236AB), 3-lead, dimensions per IEC/JEDEC outline (D = 2.8 mm, E = 1.4 mm, Lp = 1.2 mm).

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal for current amplification; requires DC bias network for stable RF operation
2EmiterCurrent source terminal; connected to RF ground or bias return in common-base configuration
3CollectorOutput/power terminal; carries RF signal and dissipates heat; tab is electrically connected to collector

Key Features

FeatureDesign Value
Low intermodulation distortionValidated by DIN 45004B −60 dB test at 493.25 MHz, enabling clean signal amplification in multi-carrier RF systems
High fT with low Cre5 GHz fT and only 1 pF feedback capacitance support stable wideband gain up to UHF
Optimized RF capacitancesCe = 1.8 pF and Cc = 0.95 pF balance input/output impedance matching in 75 Ω systems
Thermally robust SOT23Rth j–s = 260 K/W enables reliable operation at 300 mW with minimal PCB copper area

Applications

Aerial Amplifier Front-EndSpectrum Analyzer Input Stage

Use Scenario: Boosting weak terrestrial TV or satellite signals before distribution to multiple receivers.

IC Role / Device Role / Timing Role: PNP wideband RF amplifier operating in common-emitter configuration with 75 Ω input/output matching.

Use Value: 300 mV output voltage under −60 dB intermodulation ensures minimal cross-channel interference in multi-channel broadcast systems.

Use Scenario: First-stage amplification of unknown input spectra in benchtop spectrum analyzers.

IC Role / Device Role / Timing Role: Low-noise, high-linearity RF gain block preserving signal integrity across 500 MHz bandwidth.

Use Value: 2.4 dB noise figure and 16.5 dB GUM maximize dynamic range without degrading analyzer sensitivity.

Radar Receiver LNAOscilloscope Vertical Amplifier

Use Scenario: Low-noise amplification of pulsed RF returns in short-range Doppler radar modules.

IC Role / Device Role / Timing Role: High-fT PNP transistor configured for broadband pulse fidelity and minimal group delay variation.

Use Value: 5 GHz fT supports sub-nanosecond rise-time preservation essential for accurate time-of-flight measurement.

Use Scenario: Wideband vertical deflection amplification in analog oscilloscopes up to 500 MHz bandwidth.

IC Role / Device Role / Timing Role: High-gain, low-distortion active stage driving CRT deflection plates with fast transient response.

Use Value: Low intermodulation distortion ensures faithful reproduction of complex waveforms without harmonic smearing on display.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP RF transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BFR93NPN complement; same fT, GUM, and noise figure but opposite polarity and bias requirementsRequires inverted supply and bias network; not drop-in compatible due to polarity reversalSelect BFR93 only when circuit topology mandates NPN configuration and layout allows base-emitter-collector reorientation
MRF901Higher Ptot (500 mW), higher VCEO (−25 V), but lower fT (3 GHz) and larger SOT343 packageBetter power handling for medium-power stages; less suitable for ultra-wideband <5 GHz designsChoose MRF901 when thermal margin or voltage headroom outweighs need for 5 GHz bandwidth

Compared with BFR93 and MRF901, the BFT93 uniquely combines PNP polarity, 5 GHz fT, and SOT23 footprint-enabling compact, low-distortion amplification where polarity-specific biasing and space-constrained layouts are mandatory.

Availability

BFT93 is available at Aetrix Electronics and suitable for aerial amplifiers, spectrum analyzers, radar receivers, and oscilloscope vertical amplifiers requiring stable component supply and legacy RF transistor continuity.

Supply support for BFT93 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company delivering high-performance RF, analog, and mixed-signal solutions for communications, automotive, and industrial markets.

The BFT93 belongs to NXP's legacy RF transistor product line, engineered specifically for wideband, low-distortion amplification in test equipment and broadcast infrastructure where PNP silicon performance at UHF frequencies was critical.

FAQ

What is the maximum operating frequency supported by the BFT93?

The BFT93 has a typical transition frequency (fT) of 5 GHz, verified at IC = −30 mA and VCE = −5 V. This defines its upper small-signal gain bandwidth limit; practical amplifier designs using the BFT93 achieve flat gain up to 500 MHz with validated intermodulation performance, and usable gain extends into low-UHF bands depending on matching network design.

Is the BFT93 pin-compatible with the BFR93?

No-the BFT93 is a PNP transistor while the BFR93 is its NPN complement. Their pinouts are identical (base-emitter-collector on pins 1–2–3), but polarity reversal means direct substitution would invert biasing and likely cause circuit failure. The BFT93 and BFR93 serve complementary roles in push-pull or differential topologies-not as drop-in replacements.

What is the thermal resistance of the BFT93 and how does it affect PCB layout?

The BFT93 has a junction-to-soldering-point thermal resistance (Rth j–s) of 260 K/W. Since the collector tab is electrically and thermally connected to pin 3, effective heat dissipation requires direct copper pour connection to pin 3 with ≥10 mm² of 2-oz copper. Exceeding 300 mW without adequate thermal relief risks junction temperatures exceeding 175 °C, triggering permanent degradation.

Does the BFT93 meet automotive qualification standards?

No-the BFT93 is not automotive-qualified. Per NXP's November 1992 datasheet, it is designated for industrial and test equipment use only. It lacks AEC-Q101 stress testing, extended temperature validation beyond −65 °C to +150 °C storage, and automotive-grade reliability screening. Use in automotive applications is unsupported and at the designer's sole risk.

How is the noise figure of the BFT93 measured and what load impedance achieves minimum F?

The BFT93 noise figure of 2.4 dB is measured at IC = −10 mA, VCE = −5 V, f = 500 MHz, and Tamb = 25 °C with optimal source impedance (Zs = Zopt). Zopt is not specified numerically in the datasheet but is determined experimentally during characterization; achieving minimum F requires conjugate matching to this impedance via external network synthesis, not default 50 Ω termination.

BFT93,215 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Voltage - Collector Emitter Breakdown (Max):
12V
Frequency - Transition:
5GHz
Noise Figure (dB Typ @ f):
2.4dB @ 500MHz
Gain:
-
Power - Max:
300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 30mA, 5V
Current - Collector (Ic) (Max):
35mA
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23 (TO-236AB)

BFT93,215 FAQ

1.How can I place an order for BFT93,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFT93,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFT93,215 reliable?

The price and inventory of BFT93,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFT93,215 is usually 5 days.

3.What payment methods are accepted for BFT93,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFT93,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFT93,215?

BFT93,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFT93,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFT93,215?

For technical support, including BFT93,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFT93,215 requirements.

6.How does Aetrix verify that BFT93,215 is sourced from the original manufacturer or authorized distributors?

All BFT93,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFT93,215 meets industry standards.

7.What is the process for return or replacement of BFT93,215?

All BFT93,215 units undergo pre-shipment inspection (PSI). If there is an issue with BFT93,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFT93,215 part is unused and in its original packaging.

Return procedure for BFT93,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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