Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

NXP Semiconductors BFU630F,115

Name: BFU630F,115
Brand: NXP Semiconductors
SKU: BFU630F,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BFU630F,115

Manufacturer:: NXP Semiconductors

Category:: Bipolar RF Transistors

Package:: SOT-343F

Datasheet:: BFU630F,115.pdf

Description:: RF TRANS NPN 5.5V 21GHZ 4DFP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,810

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BFU630F,115 from NXP Semiconductors is an NPN silicon microwave transistor in SOT343F package, designed for low-noise, high-gain RF amplification at 2.4 GHz with 0.85 dB noise figure, 24.5 dB maximum power gain, and 21 GHz transition frequency - deployed in WLAN, GPS, and Bluetooth front-end LNAs.

For engineers reviewing the BFU630F,115 datasheet, BFU630F,115 pinout, BFU630F,115 application, or BFU630F,115 equivalent, this device requires attention to ESD handling per ANSI/ESD S20.20, emitter-lead thermal derating (Rth(j-sp) = 300 K/W), and 50 Ω impedance-matched biasing for optimal noise performance at 3 mA collector current.

Technical Context

This NPN RF transistor uses 40 GHz f_T silicon technology optimized for broadband operation from 1.5 GHz to 5.8 GHz. Its dual-emitter SOT343F configuration enables balanced LNA designs and supports stable gain (K > 1) up to 2.4 GHz.

It delivers 11.5 dBm output power at 1 dB compression and 26.5 dBm third-order intercept point at 2.4 GHz under 30 mA / 2.5 V bias, with collector-base capacitance of 47 fF enabling sharp frequency selectivity in matching networks.

Key Specifications

Parameter	Value and Actual Design Meaning
Noise figure (NF)	0.85 dB at 2.4 GHz - enables high-sensitivity receiver front-ends in GPS and WLAN.
Transition frequency (f_T)	21 GHz - supports stable amplification up to Ku-band frequencies.
Maximum power gain (G_p(max))	24.5 dB at 2.4 GHz - provides sufficient gain margin before cascaded filtering stages.
Collector-emitter voltage (V_CEO)	5.5 V - limits usable supply headroom to ≤5 V in low-voltage RF designs.
Collector current (I_C)	30 mA max - defines thermal boundary for continuous-wave operation in handheld devices.
Thermal resistance (R_th(j-sp))	300 K/W - mandates strict solder-point temperature control ≤90 °C for 200 mW dissipation.
Third-order intercept (IP3)	26.5 dBm at 2.4 GHz - ensures linearity for multi-carrier LTE and Wi-Fi signals.

Pinout & Package

SOT343F is a plastic surface-mounted flat pack with reverse pinning and 4 leads; dimensions: 2.2 × 1.35 × 0.7 mm (L × W × H), with 0.65 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Primary emitter connection; solder point defines thermal reference (T_sp) for derating.
2	Base	RF input node requiring 50 Ω series matching and DC bias via high-impedance resistor.
3	Emitter	Dual-emitter configuration enables balanced topology or DC current splitting for stability.
4	Collector	RF output node; must be AC-coupled and matched to 50 Ω load for maximum power transfer.

Key Features

Feature	Design Value
Low-noise amplification	0.85 dB NF at 2.4 GHz enables sub–1 dB system noise figure in compact GPS receivers.
High-frequency bandwidth	21 GHz f_T supports stable gain across 1.5–5.8 GHz - covers all major ISM and cellular bands.
Dual-emitter configuration	Two isolated emitter terminals allow differential biasing or current sharing to reduce thermal gradients.
ESD-sensitive design	Requires ANSI/ESD S20.20-compliant handling - gate oxide integrity depends on controlled discharge paths.
Compact RF packaging	SOT343F footprint (2.2 × 1.35 mm) fits dense RF modules without compromising parasitic inductance.

Applications

GPS Receiver Front-End	Wi-Fi 2.4 GHz LNA
Use Scenario: Low-power GNSS module receiving weak satellite signals indoors or under foliage. IC Role / Device Role / Timing Role: First-stage low-noise amplifier directly after antenna switch and bandpass filter. Use Value: 0.85 dB NF preserves signal-to-noise ratio critical for fast TTFF and position accuracy below –155 dBm.	Use Scenario: 802.11b/g/n client device requiring high linearity and sensitivity in crowded 2.4 GHz environments. IC Role / Device Role / Timing Role: Single-ended LNA in transceiver front-end with integrated PA bypass path. Use Value: 26.5 dBm IP3 prevents adjacent-channel interference from coexisting Bluetooth or ZigBee traffic.
Bluetooth LE Transceiver	Ku-Band DRO
Use Scenario: Wearable sensor hub with Bluetooth 5.0 connectivity operating at 3.3 V supply. IC Role / Device Role / Timing Role: Receive-path LNA with adjustable bias current (3–30 mA) for dynamic power scaling. Use Value: 24.5 dB gain at 2.4 GHz reduces need for additional gain stages, lowering overall system noise figure.	Use Scenario: Local oscillator in satellite TV LNBs requiring stable, low-phase-noise signal generation at 10–12 GHz. IC Role / Device Role / Timing Role: Active resonator transistor in dielectric resonator oscillator feedback loop. Use Value: 21 GHz f_T and 47 fF C_CBS enable reliable oscillation with minimal external tuning components.

GPS Receiver Front-End

Wi-Fi 2.4 GHz LNA

Use Scenario: Low-power GNSS module receiving weak satellite signals indoors or under foliage.

IC Role / Device Role / Timing Role: First-stage low-noise amplifier directly after antenna switch and bandpass filter.

Use Value: 0.85 dB NF preserves signal-to-noise ratio critical for fast TTFF and position accuracy below –155 dBm.

Use Scenario: 802.11b/g/n client device requiring high linearity and sensitivity in crowded 2.4 GHz environments.

IC Role / Device Role / Timing Role: Single-ended LNA in transceiver front-end with integrated PA bypass path.

Use Value: 26.5 dBm IP3 prevents adjacent-channel interference from coexisting Bluetooth or ZigBee traffic.

Bluetooth LE Transceiver

Ku-Band DRO

Use Scenario: Wearable sensor hub with Bluetooth 5.0 connectivity operating at 3.3 V supply.

IC Role / Device Role / Timing Role: Receive-path LNA with adjustable bias current (3–30 mA) for dynamic power scaling.

Use Value: 24.5 dB gain at 2.4 GHz reduces need for additional gain stages, lowering overall system noise figure.

Use Scenario: Local oscillator in satellite TV LNBs requiring stable, low-phase-noise signal generation at 10–12 GHz.

IC Role / Device Role / Timing Role: Active resonator transistor in dielectric resonator oscillator feedback loop.

Use Value: 21 GHz f_T and 47 fF C_CBS enable reliable oscillation with minimal external tuning components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640	Higher f_T (45 GHz), lower NF (0.55 dB at 2.4 GHz), but higher V_CEO (7 V) and different SOT343 package pinout.	Preferred in ultra-low-noise 5G FR1 receive chains where tighter NF budget is required.	Select BFP640 only if board layout accommodates revised emitter/base pin assignment and higher supply tolerance.
MMA040107-12	Same SOT343F package and pinout, but GaAs-based: 0.7 dB NF at 2.4 GHz, 22 GHz f_T, 150 mW P_tot.	Better suited for high-reliability industrial radios due to GaAs radiation hardness and wider temp range.	Choose MMA040107-12 when extended temperature operation (–40 to +105 °C) or radiation tolerance is mandatory.

Compared with BFU630F,115, BFP640 offers superior noise performance but demands PCB redesign for pin compatibility, while MMA040107-12 maintains mechanical drop-in capability at the cost of silicon process limitations in thermal management.

Availability

BFU630F,115 is available at Aetrix Electronics and suitable for GPS receivers, Wi-Fi client devices, Bluetooth LE wearables, and Ku-band DROs requiring stable component supply across production lifecycles.

Supply support for BFU630F,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The BFU630F,115 belongs to NXP's wideband silicon RF transistor product line, engineered specifically for high-linearity, low-noise amplification in portable wireless infrastructure and mobile communication front-ends.

FAQ

What is the maximum recommended collector current for continuous operation of the BFU630F,115?

The BFU630F,115 has a maximum collector current rating of 30 mA under conditions where solder-point temperature (T_sp) remains ≤90 °C. Exceeding this current without adequate thermal management risks junction overheating beyond the 150 °C absolute maximum, degrading gain and noise performance over time. The BFU630F,115 datasheet specifies 30 mA as the upper limit for reliable long-term operation in handheld RF modules.

Does the BFU630F,115 support 5 GHz Wi-Fi (802.11a/n/ac) applications?

Yes, the BFU630F,115 delivers 12 dB insertion gain and 1.3 dB noise figure at 5.8 GHz, making it viable for 5 GHz Wi-Fi LNA stages. However, its maximum power gain drops to 16 dB at that frequency, and output power at 1 dB compression remains at 12.5 dBm - sufficient for receive-path amplification but not for high-power transmit functions. The BFU630F,115 is typically used in dual-band 2.4/5 GHz front-ends where separate optimization per band is acceptable.

How should the dual emitters of the BFU630F,115 be connected in a standard single-ended LNA design?

In standard single-ended configurations, both emitter pins (1 and 3) of the BFU630F,115 are tied together and connected to RF ground through a common bypass capacitor. This preserves the device's specified noise and gain characteristics per the datasheet test conditions. Leaving either emitter floating violates the internal structure and may cause instability or parameter shift. The BFU630F,115 dual-emitter layout is primarily intended for balanced topologies or thermal current sharing - not independent operation.

What is the significance of the "115" suffix in BFU630F,115?

The "115" suffix in BFU630F,115 denotes the tape-and-reel packaging variant per NXP's ordering convention: it indicates 3,000 units per reel in SOT343F carrier tape, compliant with EIA-481-D standards. This differs from BFU630F,112 (10,000 units/reel) and BFU630F,135 (bulk packaging). The BFU630F,115 part number guarantees full traceability to NXP's 2010 Rev. 1 product data sheet and original manufacturing lots.

Can the BFU630F,115 be used in automotive-grade applications?

No - the BFU630F,115 is explicitly designated as a non-automotive qualified product in NXP's datasheet. It lacks AEC-Q101 qualification, has no guaranteed operation above +105 °C, and is not tested to automotive reliability standards. Using the BFU630F,115 in automotive infotainment or telematics systems voids NXP's warranty and introduces unmitigated risk of field failure. For such use cases, engineers must select an AEC-Q101-qualified alternative like the BGA2867.

BFU630F,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-343F

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 5.5V

Frequency - Transition:: 21GHz

Noise Figure (dB Typ @ f):: 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz

Gain:: 13dB ~ 22.5dB

Power - Max:: 200mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 90 @ 5mA, 2V

Current - Collector (Ic) (Max):: 30mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-DFP

BFU630F,115 FAQ

1.How can I place an order for BFU630F,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFU630F,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFU630F,115 reliable?

The price and inventory of BFU630F,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFU630F,115 is usually 5 days.

3.What payment methods are accepted for BFU630F,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFU630F,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFU630F,115?

BFU630F,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFU630F,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFU630F,115?

For technical support, including BFU630F,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFU630F,115 requirements.

6.How does Aetrix verify that BFU630F,115 is sourced from the original manufacturer or authorized distributors?

All BFU630F,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFU630F,115 meets industry standards.

7.What is the process for return or replacement of BFU630F,115?

All BFU630F,115 units undergo pre-shipment inspection (PSI). If there is an issue with BFU630F,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFU630F,115 part is unused and in its original packaging.

Return procedure for BFU630F,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…