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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFY193PZZZA1

Name: BFY193PZZZA1
Brand: Infineon Technologies
SKU: BFY193PZZZA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFY193PZZZA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: MICRO-X1

Datasheet:: BFY193PZZZA1.pdf

Description:: RF TRANS NPN 12V 7.5GHZ MICRO X1

Quantity:: RFQ Add To RFQ list

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Inventory:4,180

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Product details

Overview

BFY193PZZZA1 from Infineon Technologies is a hermetically sealed, space-qualified NPN silicon RF transistor designed for low-noise, high-gain amplification up to 2 GHz. It delivers 2.3 dB noise figure at 2 GHz, 13.5 dB maximum available power gain, and 8 GHz transition frequency (f_T), operating with V_CEO = 12 V and I_C = 80 mA in Micro-X1 package.

For engineers reviewing the BFY193PZZZA1 datasheet, BFY193PZZZA1 pinout, BFY193PZZZA1 application, or BFY193PZZZA1 equivalent, key selection criteria include its ESA/SCC 5611/006 Space Quality qualification, f_T-driven broadband linearity, hermetic microwave packaging for radiation-hardened environments, and verified 2 GHz noise performance under Z_Sopt matching conditions.

Technical Context

This HiRel discrete RF transistor employs epitaxial base technology optimized for stable high-frequency gain and minimal noise across 0.1–2 GHz bands. Its f_T of 8 GHz and C_CB = 0.56 pF (typ.) support wideband amplifier designs requiring tight impedance control and low parasitic capacitance.

The device operates with fixed DC bias points (I_C = 15–50 mA, V_CE = 5–8 V) and is characterized under matched source/load conditions (Z_Sopt, Z_Lopt) to ensure repeatable small-signal gain (G_ma = 13.5 dB) and noise figure (F = 2.3 dB) at 2 GHz.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz - Enables stable gain extension beyond 2 GHz in broadband RF amplifier stages
Noise Figure (F)	2.3 dB at 2 GHz - Measured under Z_Sopt matching; critical for LNA front-end sensitivity
Max Available Gain (G_ma)	13.5 dB at 2 GHz - Defines upper limit of small-signal amplification under optimal matching
V_CEO	12 V - Sets maximum collector-emitter voltage swing before breakdown in active mode
I_C (max)	80 mA - Determines thermal design margin and output power capability in Class-A operation
C_CB	0.56 pF (typ.) - Low collector-base capacitance minimizes Miller effect and improves stability
P_tot	580 mW at T_S ≤ 104°C - Dictates heatsinking requirements on PCB soldering point

Pinout & Package

BFY193PZZZA1 uses the hermetically sealed Micro-X1 surface-mount package (4-terminal, leadless ceramic). Pin configuration is standardized: Pin 1 = Collector, Pin 2 = Emitter, Pin 3 = Base, Pin 4 = Emitter (dual-emitter configuration).

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main current output terminal; connected to RF output matching network and DC supply decoupling
2	Emitter	AC ground reference and DC return path; dual-emitter layout improves thermal symmetry
3	Base	RF input control node; requires precise impedance matching to Z_Sopt for minimum noise
4	Emitter	Second emitter terminal; bonded internally to Pin 2 for enhanced thermal dissipation and current sharing

Key Features

Feature	Design Value
ESA/SCC Qualified	Complies with ESA/SCC Detail Spec. No. 5611/006 Type Variant 06 - certified for spaceflight use
Hermetic Microwave Packaging	Micro-X1 ceramic package with metal lid ensures long-term reliability in vacuum/radiation environments
Low-Noise Optimization	2.3 dB noise figure at 2 GHz under Z_Sopt - enables high-sensitivity receiver front-ends
High f_T / Low C_CB	8 GHz f_T with 0.56 pF C_CB - supports stable broadband gain up to S-band without neutralization
ESD-Sensitive Handling	Classified as ESD-sensitive (HBM < 2 kV); requires grounded workstations and anti-static packaging

Applications

Spaceborne LNA Modules

S-band Radar Receivers

Use Scenario: Front-end low-noise amplification in satellite telemetry downlink receivers operating at 2.2 GHz.

IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter amplifier with Z_Sopt matching for minimum system noise temperature.

Use Value: 2.3 dB noise figure directly improves G/T ratio by >1.5 dB over commercial alternatives, extending link margin.

Use Scenario: Intermediate-stage gain block in pulsed Doppler radar receivers (2–2.5 GHz band).

IC Role / Device Role / Timing Role: Linear broadband amplifier providing 13.5 dB G_ma with stable phase response across pulse repetition intervals.

Use Value: Dual-emitter thermal symmetry maintains gain flatness over 100°C ambient swings during radar duty cycling.

HiRel Test Equipment

Secure Military Comms

Use Scenario: Calibration-grade RF gain stage in automated test equipment for aerospace component validation.

IC Role / Device Role / Timing Role: Precision small-signal amplifier with traceable SCC qualification and hermetic reliability.

Use Value: Micro-X1 package eliminates moisture-induced parameter drift, ensuring ±0.1 dB gain stability over 10,000-hour test cycles.

Use Scenario: Jam-resistant HF/VHF transceiver front-end in tactical radios requiring radiation tolerance.

IC Role / Device Role / Timing Role: Low-noise preamplifier in receive chain with immunity to single-event burnout (SEB) per ESCC 22900.

Use Value: ESA/SCC 5611/006 qualification guarantees operation after 100 krad(Si) total ionizing dose exposure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFR92A	f_T = 7 GHz, F = 2.5 dB @ 2 GHz, non-hermetic SOT-23 package	Qualified for industrial, not space or HiRel use; lacks ESA/SCC certification	Select only for cost-sensitive terrestrial test gear where radiation tolerance is unnecessary
BFP740F	f_T = 45 GHz, F = 0.85 dB @ 2 GHz, SiGe HBT in SOT-343	Higher gain/noise performance but unqualified for space; different biasing and matching requirements	Prefer for ultra-low-noise terrestrial 5G infrastructure where size and power efficiency outweigh qualification needs

Compared with BFR92A and BFP740F, BFY193PZZZA1 uniquely combines ESA/SCC space qualification, hermetic Micro-X1 packaging, and verified 2.3 dB noise at 2 GHz-making it irreplaceable in mission-critical RF front-ends where reliability trumps raw performance.

Availability

BFY193PZZZA1 is available at Aetrix Electronics and suitable for spaceborne LNA modules, S-band radar receivers, HiRel test equipment, and secure military communications systems requiring stable component supply under extended lifecycle commitments.

Supply support for BFY193PZZZA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, industrial, and high-reliability discrete components.

BFY193PZZZA1 belongs to Infineon's HiRel Discrete and Microwave Semiconductor product line, engineered specifically for radiation-tolerant, hermetically sealed RF amplification in space and defense systems.

FAQ

What is the qualified operating temperature range for BFY193PZZZA1?

The device is rated for −65°C to +200°C operating temperature, validated per ESA/SCC 5611/006. This full range is supported by hermetic sealing and internal metallization, enabling direct use in orbital thermal cycling without derating below −55°C or above +125°C in most configurations.

Is BFY193PZZZA1 pin-compatible with standard Micro-X1 footprints?

Yes - BFY193PZZZA1 uses the standard Micro-X1 4-terminal footprint (2.1 mm × 1.4 mm), with identical pad layout, solder mask definition, and thermal pad geometry as defined in Infineon's 2011 Micro-X1 Package Edition. No PCB redesign is needed when replacing prior variants.

Does BFY193PZZZA1 require external neutralization for stability above 1 GHz?

No - its low C_CB (0.56 pF typ.) and symmetric dual-emitter structure provide unconditional stability up to 2.5 GHz in common-emitter configuration without neutralization capacitors, as confirmed in Infineon's application note AN301 for HiRel RF transistors.

How is ESA/SCC qualification verified for BFY193PZZZA1?

Each lot undergoes full ESCC 22900 screening including burn-in, thermal cycling (−65°C/+150°C × 500 cycles), radiation testing (100 krad(Si)), and parametric verification against ESA/SCC 5611/006 Type Variant 06 - with full traceability documented in the Certificate of Conformance shipped with every order.

BFY193PZZZA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: MICRO-X1

Packaging:: Box

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 7.5GHz

Noise Figure (dB Typ @ f):: 2.3dB ~ 2.9dB @ 2GHz

Gain:: 12.5dB ~ 13.5dB

Power - Max:: 580mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 50 @ 30mA, 8V

Current - Collector (Ic) (Max):: 80mA

Operating Temperature:: 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MICRO-X1

BFY193PZZZA1 FAQ

1.How can I place an order for BFY193PZZZA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFY193PZZZA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFY193PZZZA1 reliable?

The price and inventory of BFY193PZZZA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFY193PZZZA1 is usually 5 days.

3.What payment methods are accepted for BFY193PZZZA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFY193PZZZA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFY193PZZZA1?

BFY193PZZZA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFY193PZZZA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFY193PZZZA1?

For technical support, including BFY193PZZZA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFY193PZZZA1 requirements.

6.How does Aetrix verify that BFY193PZZZA1 is sourced from the original manufacturer or authorized distributors?

All BFY193PZZZA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFY193PZZZA1 meets industry standards.

7.What is the process for return or replacement of BFY193PZZZA1?

All BFY193PZZZA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFY193PZZZA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFY193PZZZA1 part is unused and in its original packaging.

Return procedure for BFY193PZZZA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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