Infineon Technologies BGR405H6327XTSA1

Overview

BGR405H6327XTSA1 from Infineon Technologies is an NPN silicon RF transistor with integrated bias circuitry in SOT343 package, designed for low-noise amplification at 0.4 GHz and 1.8 GHz. It delivers 7.5 dB typical gain (S21), 1.0 dB noise figure (NF), and operates with 0.85 mA bias current at VCC = 1.2 V. Used in mobile handset front-end LNAs where compact size and low-power biasing are critical.

For engineers reviewing the BGR405H6327XTSA1 datasheet, BGR405H6327XTSA1 pinout, BGR405H6327XTSA1 application, or BGR405H6327XTSA1 equivalent, key selection criteria include verified S21/NF performance at 0.4 GHz, on-chip bias network eliminating external resistors, SOT343 thermal resistance ≤595 K/W, and RoHS-compliant Pb-free construction.

Technical Context

The BGR405 integrates a monolithic NPN RF transistor with on-die bias resistors, enabling stable 0.85 mA collector current at 1.2 V without external components. Its SIEGET® 25 GHz fT-line architecture supports operation up to 1.8 GHz with measured S21 ≥7.0 dB and NF ≤1.6 dB.

It features a built-in emitter-collector diode (non-functional in common-emitter mode) and requires AC coupling at RFOUT when not shorted to VCC. DC blocking is mandatory at RFIN and RFOUT per test circuit Figure 2, with 50 Ω system impedance.

Key Specifications

Pinout & Package

SOT343 (SC-89) 4-pin plastic surface-mount package with exposed emitter pad (GND) for thermal conduction. Dimensions: 2.1 × 1.25 × 0.9 mm (L × W × H), pitch 0.65 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP420H6327XTSA1 and MMA040407-12, the BGR405H6327XTSA1 uniquely combines on-chip biasing and 1.0 dB NF at 0.4 GHz in a 4-pin SOT343, making it optimal for cost-sensitive, space-constrained GSM850/900 LNA designs where external bias components must be eliminated.

Availability

BGR405H6327XTSA1 is available at Aetrix Electronics and suitable for GSM handset front-ends, DECT cordless receivers, and ISM-band telemetry systems requiring stable component supply and RoHS-compliant packaging.

Supply support for BGR405H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global R&D and manufacturing infrastructure.

The BGR405 belongs to Infineon's SIEGET® RF transistor family, engineered specifically for low-voltage, low-noise amplification in battery-powered wireless handsets and portable communication devices.

FAQ

Is BGR405H6327XTSA1 pin-compatible with BFR92A or BFR93A?

No. BGR405H6327XTSA1 uses SOT343 with four pins (RFIN, GND, RFOUT, VCC), while BFR92A/BFR93A use SOT23 with three pins and require external bias. Pin mapping, bias architecture, and thermal pad configuration differ fundamentally - direct replacement is not possible without PCB redesign.

Can BGR405H6327XTSA1 operate at 2.4 GHz for Bluetooth applications?

Its S21 drops to ~3.5 dB and NF rises to ~2.8 dB at 2.4 GHz per extrapolated S-parameter data; it is not characterized or recommended for 2.4 GHz operation. Infineon specifies performance only up to 1.8 GHz, and gain roll-off beyond that frequency compromises LNA functionality in Bluetooth LE systems.

What is the role of the internal emitter-collector diode mentioned in the datasheet?

The internal diode results from the monolithic fabrication process and is electrically isolated from normal common-emitter operation. It does not conduct during standard biasing (VCC > 0, RFIN/RFOUT AC-coupled) and has no impact on RF gain, noise, or stability - it is a process artifact, not a functional feature.

Does BGR405H6327XTSA1 require external DC blocking capacitors?

Yes. The datasheet test circuit (Figure 2) mandates 100 pF DC-blocking capacitors at both RFIN and RFOUT. These prevent DC interaction between stages and maintain proper bias point integrity; omitting them risks gain instability and potential damage from unintended DC paths.