Infineon Technologies BGR420H6327XTSA1
- Part No.:
- BGR420H6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BGR420H6327XTSA1.pdf
- Description:
- RF TRANS NPN 13V SOT343-4
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BGR420H6327XTSA1 from Infineon Technologies is an NPN silicon RF transistor with integrated bias circuitry in SOT343 package, designed for 0.4 GHz low-noise amplification. It delivers 26 dB gain (S21), 1.5 dB noise figure, and 13 mA quiescent collector current at 3.6 V VCC - used in cellular front-end LNAs where compact bias-stable RF gain is required.
For engineers reviewing the BGR420H6327XTSA1 datasheet, BGR420H6327XTSA1 pinout, BGR420H6327XTSA1 application, or BGR420H6327XTSA1 equivalent, key selection criteria include verified 0.4 GHz NF/S21 performance, on-chip bias network eliminating external resistors, SOT343 thermal resistance ≤290 K/W, and RoHS-compliant Pb-free construction.
Technical Context
The BGR420 integrates a monolithic NPN RF transistor with on-die bias resistors, enabling fixed 13 mA ICC at VCC = 3.6 V and VBB = 2.8 V without external bias components. Its SIEGET® 25 GHz fT-line architecture supports stable small-signal amplification up to 1.8 GHz.
It operates in common-emitter configuration with an internal emitter-collector diode that does not impair RF function. DC blocking is required at RFIN and RFOUT per test circuit Figure 2; matching networks are needed for optimal S11/S22 return loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Noise Figure (NF) | 1.5 dB at 0.4 GHz - enables high sensitivity in sub-1 GHz receiver front ends |
| Gain (S21) | 26 dB at 0.4 GHz - provides single-stage LNA gain sufficient to overcome mixer noise floor |
| Output IP3 (OIP3) | 21 dBm at 0.4 GHz - supports linear operation with moderate adjacent-channel interference |
| 1 dB Compression (OP-1dB) | 5.5 dBm at 0.4 GHz - defines usable input power range before gain compression |
| VCC Quiescent Current | 13 mA at VCC = 3.6 V - sets power budget for battery-sensitive portable RF receivers |
| Thermal Resistance (RthJS) | ≤290 K/W - limits junction temperature rise under 120 mW dissipation at PCB solder point |
| Package | SOT343 - 4-pin surface-mount footprint compatible with automated assembly and RF layout constraints |
Pinout & Package
SOT343 package: 1.3 mm × 1.3 mm × 0.9 mm body, 4-terminal leadless plastic package with exposed emitter pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFIN) | RF Input | AC-coupled signal entry; requires external DC blocking capacitor and impedance matching |
| 2 (GND) | Emitter / Ground Reference | Primary thermal path and RF ground reference; connected to PCB thermal pad |
| 3 (RFOUT / VCC) | RF Output & Power Supply | Collector output node also supplies DC bias; requires RF choke or decoupling for DC feed |
| 4 (VBB) | Bias Voltage Input | Provides base bias voltage (2.8 V typical); sets operating point independent of VCC variation |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Eliminates 2–3 external resistors, reducing BOM count and board area in LNA designs |
| Low noise figure (1.5 dB @ 0.4 GHz) | Meets GSM/EDGE receiver sensitivity requirements without cascaded amplification stages |
| SIEGET® 25 GHz fT process | Ensures gain stability and phase linearity across 0.4–1.8 GHz band |
| Pb-free RoHS compliance | Meets EU Directive 2011/65/EU; qualified for lead-free reflow profiles (JEDEC J-STD-020) |
Applications
| GSM/EDGE Mobile Handset LNA | ISM Band 433 MHz Receiver Front End |
|---|---|
Use Scenario: Amplifying weak RF signals from antenna prior to downconversion in dual-band GSM/EDGE transceivers. IC Role / Device Role / Timing Role: Single-stage low-noise amplifier with fixed bias, placed between antenna switch and mixer. Use Value: 26 dB gain and 1.5 dB NF directly improve receiver sensitivity by ≥2 dB over discrete-biased alternatives. | Use Scenario: Boosting 433 MHz OOK/FSK signals in wireless sensor nodes with limited PCB space. IC Role / Device Role / Timing Role: Standalone LNA in sub-GHz ISM receiver chain, powered from 3.3 V supply rail. Use Value: On-chip bias reduces component count by 3 parts, enabling <8 mm² total LNA footprint. |
| Bluetooth Classic (2.4 GHz) IF Amplifier | GPS L1 Band (1.575 GHz) Pre-LNA Stage |
Use Scenario: Intermediate-frequency amplification after image-reject filtering in Bluetooth BR/EDR receivers. IC Role / Device Role / Timing Role: Fixed-gain IF amplifier operating at 1.8 GHz with matched 50 Ω I/O. Use Value: −23.4 dB S12 isolation prevents LO leakage feedback into IF path, improving adjacent channel rejection. | Use Scenario: First amplification stage in GPS patch antenna interface, preceding SAW filter and LNA driver. IC Role / Device Role / Timing Role: Ultra-low-noise pre-amplifier with minimal added jitter to preserve C/A code correlation integrity. Use Value: 1.7 dB NF at 1.8 GHz maintains >28 dB-Hz carrier-to-noise ratio under weak-signal conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN silicon RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP420H6327XTSA1 | Higher fT (40 GHz), lower NF (1.2 dB @ 1.8 GHz), no integrated bias resistors | Requires external bias network; better suited for 1.8–2.4 GHz designs needing higher gain flatness | Select when optimizing for 2.4 GHz Bluetooth/Wi-Fi coexistence, accepting added BOM complexity |
| MMA040407-12 | Discrete GaAs pHEMT, 0.5 dB NF @ 0.9 GHz, 17 dB gain, no bias integration | Higher gain compression (OP-1dB = 12 dBm), wider bandwidth but no on-chip bias | Choose for higher linearity in CDMA/LTE bands where OIP3 >25 dBm is critical |
Compared with BGR420H6327XTSA1, BFP420H6327XTSA1 trades bias simplicity for higher-frequency capability, while MMA040407-12 sacrifices integration for superior linearity - making BGR420 optimal for cost- and space-constrained sub-1 GHz LNA designs requiring plug-and-play bias.
Availability
BGR420H6327XTSA1 is available at Aetrix Electronics and suitable for GSM/EDGE handset design, ISM-band wireless sensor development, and GPS L1 front-end prototyping requiring stable component supply and full traceability.
Supply support for BGR420H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with global R&D and manufacturing infrastructure.
The BGR420 belongs to Infineon's SIEGET® RF transistor family, engineered specifically for high-volume, low-cost mobile and IoT receiver front ends demanding integrated bias and consistent 0.4–1.8 GHz performance.
FAQ
Is BGR420H6327XTSA1 pin-compatible with BFP420H6327XTSA1?
No. Although both use SOT343 packages, BGR420 pin 4 is VBB (bias input), while BFP420 pin 4 is GND. Swapping them causes incorrect biasing and potential damage. Layouts must be redesigned for each part's unique pin function mapping.
What is the recommended DC blocking capacitor value for RFIN and RFOUT?
For 0.4 GHz operation, a 100 pF NP0/C0G capacitor is recommended at both RFIN and RFOUT. This provides <0.2 Ω reactance at 0.4 GHz while maintaining stability across temperature and bias; larger values risk resonance with package inductance.
Does the internal emitter-collector diode affect small-signal AC performance?
No - the internal diode is reverse-biased under normal common-emitter operation (VCE > 0). It remains non-conductive and electrically invisible in S-parameter measurements, as confirmed by S12 isolation >23 dB and unchanged S21 gain across frequency sweeps.
Can BGR420H6327XTSA1 operate at VCC = 5 V?
No. Absolute maximum VCC is 13 V, but electrical characteristics are only specified at VCC = 3.6 V. At 5 V, ICC exceeds 20 mA (max rated), risking thermal runaway and accelerated degradation. Operation outside 3.3–3.6 V violates datasheet conditions and voids performance guarantees.
BGR420H6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 13V
- Frequency - Transition:
- -
- Noise Figure (dB Typ @ f):
- 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
- Gain:
- -
- Power - Max:
- 120mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Current - Collector (Ic) (Max):
- 25mA
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-3D
BGR420H6327XTSA1 FAQ
1.How can I place an order for BGR420H6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BGR420H6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BGR420H6327XTSA1 reliable?
The price and inventory of BGR420H6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BGR420H6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BGR420H6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BGR420H6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BGR420H6327XTSA1?
BGR420H6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BGR420H6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BGR420H6327XTSA1?
For technical support, including BGR420H6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BGR420H6327XTSA1 requirements.
6.How does Aetrix verify that BGR420H6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BGR420H6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BGR420H6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BGR420H6327XTSA1?
All BGR420H6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BGR420H6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BGR420H6327XTSA1 part is unused and in its original packaging.
Return procedure for BGR420H6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BGR420H6327XTSA1 Tags

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BFR182WH6327XTSA1
Infineon Technologies

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BFR92PE6327HTSA1
Infineon Technologies

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BFR360FH6327XTSA1
Infineon Technologies

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BFR193FH6327XTSA1
Infineon Technologies

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BFU550AR
NXP USA Inc.

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BFR460L3E6327XTMA1
Infineon Technologies

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MMBTH81
onsemi

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BFU520WX
NXP USA Inc.

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BFP840FESDH6327XTSA1
Infineon Technologies

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BFP650H6327XTSA1
Infineon Technologies

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BFU520AR
NXP USA Inc.

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BFS483H6327XTSA1
Infineon Technologies
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