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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

NXP Semiconductors BLT70,115

Name: BLT70,115
Brand: NXP Semiconductors
SKU: BLT70,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLT70,115

Manufacturer:: NXP Semiconductors

Category:: Bipolar RF Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BLT70,115.pdf

Description:: RF TRANS NPN 8V 900MHZ SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:9,443

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Product details

Overview

BLT70,115 from NXP Semiconductors (formerly Philips) is an NPN silicon planar epitaxial UHF power transistor in SOT223H package, designed for 900 MHz class-AB common emitter RF amplification with 4.8 V supply, ≥6 dB power gain, ≥60% collector efficiency, and 600 mW output power.

For engineers reviewing the BLT70,115 datasheet, BLT70,115 pinout, BLT70,115 application, or BLT70,115 equivalent, this discrete RF transistor serves hand-held radio equipment requiring rugged 900 MHz amplification under VSWR = 6:1 mismatch conditions with low-voltage operation and thermal robustness up to 175 °C junction temperature.

Technical Context

The BLT70,115 operates as a common-emitter RF power amplifier at 900 MHz with fixed 4.8 V collector-emitter bias and 10 µA quiescent base current. Its design emphasizes high efficiency (>60%) and stable gain (≥6 dB) under thermally constrained conditions (Ts ≤ 60 °C at collector solder point).

It features low feedback capacitance (≤2.5 pF) and collector capacitance (≤3.5 pF) to support UHF matching stability, and withstands load mismatches up to VSWR = 6:1 without failure-critical for portable radio front-end resilience.

Key Specifications

Parameter	Value and Actual Design Meaning
f	900 MHz operating frequency - supports ISM-band handheld transceivers
V_CE	4.8 V DC supply - enables low-voltage battery-powered operation
P_L	600 mW RF output power - sufficient for Class-AB handset PA stage
G_p	≥6 dB small-signal power gain - ensures adequate driver-stage headroom
η_C	≥60% collector efficiency - minimizes thermal load in compact SMD layout
R_{th j-s}	55 K/W junction-to-solder-point thermal resistance - defines heatsinking requirement at collector pin
V_CEO	8 V maximum collector-emitter voltage - constrains safe DC bias margin

Pinout & Package

SOT223H plastic surface-mount package with 4-terminal configuration: three leads (1–3) and one large thermal pad (pin 4), optimized for RF grounding and heat dissipation at the collector.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Primary emitter connection; used with pin 3 for dual-emitter parallel path in RF layout
2	Base	DC and RF input control node; requires impedance-matched drive network
3	Emitter	Secondary emitter terminal - electrically tied to pin 1 internally; improves current sharing and thermal symmetry
4	Collector	Main RF output and primary thermal path; soldered directly to PCB ground plane for low-inductance RF return and heatsinking

Key Features

Feature	Design Value
High ruggedness	Withstands VSWR = 6:1 mismatch across all phases at 900 MHz - eliminates need for external circulators in handheld radios
Low-voltage operation	Optimized for 4.8 V supply - compatible with single-cell Li-ion or 3×NiCd battery packs
Thermal reliability	175 °C max junction temperature and 55 K/W R_{th j-s} - supports continuous operation in sealed handheld enclosures
UHF matching stability	C_re ≤ 2.5 pF and C_c ≤ 3.5 pF - reduces sensitivity to layout parasitics in 900 MHz matching networks

Applications

Hand-Held Transceivers	ISM-Band Wireless Modules
Use Scenario: Portable two-way radios operating in 900 MHz ISM band with battery life and size constraints. IC Role / Device Role / Timing Role: Final RF power amplifier stage in common-emitter Class-AB configuration. Use Value: Delivers 600 mW output with ≥60% efficiency at 4.8 V, reducing battery drain and thermal management complexity.	Use Scenario: Compact wireless sensor nodes requiring certified 900 MHz transmit capability. IC Role / Device Role / Timing Role: Integrated PA for FCC/ETSI-compliant unlicensed band transmission. Use Value: Rugged VSWR = 6:1 tolerance eliminates need for external protection circuitry, saving board space and BOM cost.
RFID Reader Front-Ends	Low-Power Base Stations
Use Scenario: Mobile RFID interrogators needing reliable near-field tag excitation at 900 MHz. IC Role / Device Role / Timing Role: Modulated RF power driver feeding antenna matching network. Use Value: Stable 900 MHz gain (≥6 dB) and low C_re ensure consistent modulation envelope fidelity under varying antenna loads.	Use Scenario: Small-cell infrastructure units deployed in distributed antenna systems. IC Role / Device Role / Timing Role: Low-power repeater PA stage operating from 4.8 V DC supply rails. Use Value: Dual-emitter configuration (pins 1 & 3) improves current distribution and thermal uniformity in densely packed layouts.

Hand-Held Transceivers

ISM-Band Wireless Modules

Use Scenario: Portable two-way radios operating in 900 MHz ISM band with battery life and size constraints.

IC Role / Device Role / Timing Role: Final RF power amplifier stage in common-emitter Class-AB configuration.

Use Value: Delivers 600 mW output with ≥60% efficiency at 4.8 V, reducing battery drain and thermal management complexity.

Use Scenario: Compact wireless sensor nodes requiring certified 900 MHz transmit capability.

IC Role / Device Role / Timing Role: Integrated PA for FCC/ETSI-compliant unlicensed band transmission.

Use Value: Rugged VSWR = 6:1 tolerance eliminates need for external protection circuitry, saving board space and BOM cost.

RFID Reader Front-Ends

Low-Power Base Stations

Use Scenario: Mobile RFID interrogators needing reliable near-field tag excitation at 900 MHz.

IC Role / Device Role / Timing Role: Modulated RF power driver feeding antenna matching network.

Use Value: Stable 900 MHz gain (≥6 dB) and low C_re ensure consistent modulation envelope fidelity under varying antenna loads.

Use Scenario: Small-cell infrastructure units deployed in distributed antenna systems.

IC Role / Device Role / Timing Role: Low-power repeater PA stage operating from 4.8 V DC supply rails.

Use Value: Dual-emitter configuration (pins 1 & 3) improves current distribution and thermal uniformity in densely packed layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar UHF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF9011LT1	Higher f_T (1.2 GHz), higher P_1dB (1 W), TO-247 package - larger footprint and higher thermal mass	Targeted at broadband 800–1000 MHz base station PAs, not handheld form factor	Select when >600 mW output or wider bandwidth required; avoid for space-constrained handheld designs
BFP740F	Lower P_L (250 mW), SOT343 package, optimized for 2.4 GHz - incompatible frequency band and power level	Designed for Wi-Fi 2.4 GHz LNA/PA, not 900 MHz power amplification	Only suitable for 2.4 GHz systems; not a functional substitute for BLT70,115 in 900 MHz radio applications

Compared with MRF9011LT1 and BFP740F, the BLT70,115 uniquely balances 900 MHz performance, SOT223H compactness, 4.8 V operation, and VSWR ruggedness - making it irreplaceable for battery-powered handheld radios where size, efficiency, and mismatch tolerance are co-constrained.

Availability

BLT70,115 is available at Aetrix Electronics and suitable for hand-held radio equipment, ISM-band wireless modules, and RFID reader front-ends requiring stable component supply and long-term industrial availability.

Supply support for BLT70,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.

The BLT70,115 belongs to NXP's legacy UHF power transistor product line, engineered specifically for efficient, rugged, low-voltage RF amplification in portable 900 MHz communication devices.

FAQ

What is the maximum operating frequency of the BLT70,115?

The BLT70,115 is characterized and optimized for 900 MHz operation in common-emitter Class-AB configuration. Its RF performance data-including ≥6 dB power gain and ≥60% collector efficiency-is specified at exactly 900 MHz. While usable up to ~1 GHz based on typical f_T and capacitance values, the BLT70,115 is not rated or tested for reliable operation beyond 900 MHz per its official specification.

Does the BLT70,115 support pin-compatible replacement with other SOT223H transistors?

No, the BLT70,115 has a unique 4-pin SOT223H pinout with dual emitter terminals (pins 1 and 3) and collector on pin 4. Other SOT223H transistors typically use 3-pin configurations (emitter-base-collector). Substitution requires verification of pin mapping, thermal pad routing, and RF matching-no drop-in replacements exist for the BLT70,115.

What is the thermal resistance specification for the BLT70,115?

The BLT70,115 has a thermal resistance from junction to soldering point (R_{th j-s}) of 55 K/W, measured at P_tot = 2.1 W and T_s = 60 °C. This value assumes proper soldering of pin 4 (collector) to a large copper area acting as a thermal plane-critical for maintaining T_j ≤ 175 °C during 600 mW RF output.

Can the BLT70,115 be used in Class-C or Class-F amplifier topologies?

The BLT70,115 datasheet only specifies performance in Class-AB common-emitter operation at 900 MHz. No characterization data exists for Class-C or Class-F switching modes, including harmonic content, switching speed, or safe operating area under pulsed conditions. Using BLT70,115 outside Class-AB risks exceeding limiting values and invalidates the published ruggedness claims.

What is the recommended bias network for the BLT70,115 in 900 MHz applications?

The BLT70,115 datasheet specifies a test circuit (Fig.7) using R1 = 15 Ω, R2 = 390 Ω, and R3 = 10 Ω for base biasing, with +V_bias and +V_S both set to 4.8 V. This network establishes I_CQ ≈ 10 µA and ensures stable Class-AB operation. Deviations require re-characterization of gain, efficiency, and VSWR tolerance-no alternate bias schemes are validated for BLT70,115.

BLT70,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 8V

Frequency - Transition:: 900MHz

Noise Figure (dB Typ @ f):: -

Gain:: -

Power - Max:: 2.1W

DC Current Gain (hFE) (Min) @ Ic, Vce:: 25 @ 100mA, 4.8V

Current - Collector (Ic) (Max):: 250mA

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-73

BLT70,115 FAQ

1.How can I place an order for BLT70,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLT70,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLT70,115 reliable?

The price and inventory of BLT70,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLT70,115 is usually 5 days.

3.What payment methods are accepted for BLT70,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLT70,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BLT70,115?

BLT70,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLT70,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLT70,115?

For technical support, including BLT70,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLT70,115 requirements.

6.How does Aetrix verify that BLT70,115 is sourced from the original manufacturer or authorized distributors?

All BLT70,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLT70,115 meets industry standards.

7.What is the process for return or replacement of BLT70,115?

All BLT70,115 units undergo pre-shipment inspection (PSI). If there is an issue with BLT70,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLT70,115 part is unused and in its original packaging.

Return procedure for BLT70,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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