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Diodes Incorporated DDA113TU-7-F
- Part No.:
- DDA113TU-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DDA113TU-7-F.pdf
- Description:
- TRANS 2PNP PREBIAS 0.2W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:3,010
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Product details
Overview
DDA113TU-7-F from Diodes Incorporated is a PNP pre-biased dual transistor in SOT363 package, featuring integrated 1kΩ input bias resistor (R1), −50V VCBO/VCEO, −100mA IC(max), and hFE of 100–250 at IC = −1mA. It serves as a compact, logic-compatible switch for low-power digital interface and level-shifting circuits in space-constrained consumer and industrial control modules.
For engineers reviewing the DDA113TU-7-F datasheet, DDA113TU-7-F pinout, DDA113TU-7-F application, or DDA113TU-7-F equivalent, key selection criteria include its single-R1 biasing topology, guaranteed −0.3V VCE(sat) at −2.5mA/−0.25mA drive, AEC-Q101 qualification status (non-automotive grade per ordering info), SOT363 thermal resistance (625°C/W), and RoHS/Green compliance with <900ppm Br+Cl.
Technical Context
This device integrates two identical PNP bipolar junction transistors with monolithic bias resistors-only R1 (1kΩ) is present per emitter-follower configuration, no R2. Each channel operates independently with common-emitter switching capability and shares no internal interconnection between elements.
It targets DC-coupled, low-speed (<250MHz fT) switching where base current limiting and saturation assurance are critical. The −5V BVEBO rating and −0.5μA IEBO ensure robust turn-off under reverse-biased base conditions, while the 200mW total power dissipation is split across two elements with 150mW max per transistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO/VCEO | −50V - Supports rail-to-rail negative supply operation up to −50V without breakdown. |
| IC(max) | −100mA - Enables direct driving of moderate-current loads like LEDs or small relays. |
| VCE(sat) | −0.3V @ IC/IB = −2.5mA/−0.25mA - Ensures low conduction loss and minimal voltage drop in saturated switch mode. |
| hFE | 100–250 @ IC = −1mA, VCE = −5V - Provides predictable current amplification for stable biasing in discrete logic interfaces. |
| R1 | 1kΩ ±30% - Sets base current for known turn-on threshold; eliminates external resistor placement and layout uncertainty. |
| PD | 200mW total (150mW max per element) - Defines PCB pad thermal design requirements for continuous operation at +25°C ambient. |
| fT | 250MHz - Confirms suitability for sub-100MHz digital signal routing and pulse-width modulation applications. |
Pinout & Package
Package: SOT363 - 6-pin ultra-small surface-mount package with 0.65mm lead pitch, 2.15mm × 2.10mm footprint, and 0.95mm height; rated for moisture sensitivity Level 1 (J-STD-020) and UL 94V-0 flammability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Transistor 1 | Common reference node for first PNP; connects to load return or ground in high-side switch configuration. |
| 2 | Base of Transistor 1 | Input node with integrated 1kΩ resistor to Pin 3; accepts TTL/CMOS-compatible logic-high (≤−0.5V) for activation. |
| 3 | Collector of Transistor 1 | Output node tied to negative supply rail; sinks current when transistor is on. |
| 4 | Emitter of Transistor 2 | Independent emitter node for second PNP; enables dual-channel isolation without shared bias paths. |
| 5 | Base of Transistor 2 | Second input with identical 1kΩ R1 to Pin 6; supports independent control of both switches. |
| 6 | Collector of Transistor 2 | Second output collector; electrically isolated from Pin 3, allowing separate load connections. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1 bias resistor | 1kΩ per channel eliminates external components and reduces PCB area by ≥30% vs. discrete BJT + resistor solutions. |
| Epitaxial planar die construction | Ensures tight parameter distribution (±30% R1 tolerance, hFE spread 100–250) and long-term reliability in thermal cycling environments. |
| AEC-Q101 qualified variants available | DDA113TUQ-7-F version meets automotive stress testing standards; this DDA113TU-7-F is industrial-grade but shares identical die and package. |
| Green, halogen-free molding compound | UL 94V-0 rated, <900ppm Br+Cl content - satisfies IPC-1752a environmental reporting and EU SCIP database requirements. |
Applications
| LED Driver Interface | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving multiple indicator LEDs from 3.3V/5V MCU outputs with inverted logic control. IC Role / Device Role / Timing Role: Dual PNP switch translating logic-low active signals into sinking current paths for cathode-connected LEDs. Use Value: Eliminates need for two discrete transistors and four external resistors; achieves <−0.3V VCE(sat) for >95% LED forward voltage utilization. |
Use Scenario: Extending limited GPIO count on ARM Cortex-M0+ microcontrollers for relay or sensor enable control. IC Role / Device Role / Timing Role: Level-shifting and current-boosting buffer for open-drain or weak-drive pins requiring >10mA sink capability. Use Value: 100–250 hFE ensures full saturation with ≤0.25mA base drive, enabling reliable switching even at 1.8V I/O levels. |
| Industrial Sensor Signal Conditioning | Power Supply Enable Sequencing |
|
Use Scenario: Isolating and inverting analog sensor output stages before ADC input, especially in noisy factory-floor environments. IC Role / Device Role / Timing Role: Active pull-down stage converting high-impedance voltage sources into low-impedance, rail-referenced signals. Use Value: −50V breakdown ratings tolerate transient coupling; −0.5μA IEBO prevents leakage-induced offset drift in precision measurement paths. |
Use Scenario: Controlling power-up order of multiple LDOs or DC-DC converters in embedded systems with strict sequencing requirements. IC Role / Device Role / Timing Role: Dual-channel enable gate that asserts delayed or staggered "ON" signals to downstream regulators via collector-sink configuration. Use Value: Independent emitter terminals allow separate ground referencing per channel, avoiding cross-talk during simultaneous enable transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP pre-biased dual transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DDA143TU-7-F | 4.7kΩ R1 (vs. 1kΩ); same VCEO, IC(max), and package | Higher input impedance suits 5V CMOS logic with weaker drive strength; lower base current demand reduces MCU loading. | Select when interfacing with older 5V microcontrollers or when minimizing base current is prioritized over fast switching speed. |
| DDA114TU-7-F | 10kΩ R1 and 10kΩ R2 (dual-resistor topology); same VCEO and IC(max) | Includes R2 for improved turn-off speed and noise immunity; requires higher VIN swing for full saturation. | Choose for noise-prone environments or when faster recovery time (<100ns) is required; not drop-in compatible due to extra R2 path. |
Compared with DDA143TU-7-F and DDA114TU-7-F, DDA113TU-7-F offers the lowest R1 value for maximum base drive and fastest turn-on in low-voltage logic interfaces, while retaining full pin compatibility and thermal performance within the SOT363 footprint.
Availability
DDA113TU-7-F is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller GPIO expansion, and industrial sensor signal conditioning requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for DDA113TU-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This part belongs to the DDA-series pre-biased transistor family, designed specifically for reducing bill-of-materials count and improving assembly yield in high-volume consumer, computing, and industrial control applications.
FAQ
What is the maximum safe operating voltage for DDA113TU-7-F?
The absolute maximum collector-base and collector-emitter voltages are both −50V. Operation beyond this risks irreversible junction breakdown. For reliable long-term use, design margins should limit steady-state VCE to ≤−40V, especially at elevated ambient temperatures above +85°C where thermal derating applies.
Does DDA113TU-7-F require an external pull-down resistor on the base pin?
No. The integrated 1kΩ R1 connects internally between base (Pin 2 or 5) and collector (Pin 3 or 6), forming a self-biasing network. Adding an external pull-down would create parallel resistance, altering the effective base current and potentially preventing full saturation or increasing power dissipation unnecessarily.
Can DDA113TU-7-F be used in automotive applications?
The standard DDA113TU-7-F is not AEC-Q101 qualified. However, the functionally identical DDA113TUQ-7-F variant is fully qualified for automotive use, manufactured in IATF 16949 facilities, and PPAP-capable. Use the Q-suffix version for any automotive program requiring change control and qualification documentation.
How does the SOT363 package affect thermal performance in continuous operation?
With RθJA = 625°C/W on FR-4 board using minimum recommended pads, the junction temperature rise is ~125°C at full 200mW dissipation. To maintain TJ ≤ +125°C, ambient must stay below +0°C unless derated - practical designs limit continuous power to ≤100mW or add copper pour to reduce RθJA to ~300°C/W.
DDA113TU-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 1kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 250MHz
- Power - Max:
- 200mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DDA113TU-7-F FAQ
1.How can I place an order for DDA113TU-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for DDA113TU-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDA113TU-7-F reliable?
The price and inventory of DDA113TU-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDA113TU-7-F is usually 5 days.
3.What payment methods are accepted for DDA113TU-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDA113TU-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDA113TU-7-F?
DDA113TU-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDA113TU-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDA113TU-7-F?
For technical support, including DDA113TU-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDA113TU-7-F requirements.
6.How does Aetrix verify that DDA113TU-7-F is sourced from the original manufacturer or authorized distributors?
All DDA113TU-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDA113TU-7-F meets industry standards.
7.What is the process for return or replacement of DDA113TU-7-F?
All DDA113TU-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDA113TU-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDA113TU-7-F part is unused and in its original packaging.
Return procedure for DDA113TU-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDA113TU-7-F Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
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PUMD2,115
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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