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Diodes Incorporated DDA114TH-7
- Part No.:
- DDA114TH-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DDA114TH-7.pdf
- Description:
- TRANS 2PNP PREBIAS 0.15W SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:5,848
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Product details
Overview
DDA114TH-7 from Diodes Incorporated is a PNP pre-biased dual small-signal transistor in SOT563 package, featuring integrated 10kΩ and 10kΩ bias resistors (R1 = R2 = 10kΩ), −50V VCEO, −100mA IO, −0.3V VCE(SAT) at −2.5mA/−0.25mA, and hFE = 100–600. It enables compact, reliable switching in automotive body control modules and industrial sensor interface circuits.
For engineers reviewing the DDA114TH-7 datasheet, DDA114TH-7 pinout, DDA114TH-7 application, or DDA114TH-7 equivalent, key selection criteria include verified dual-PNP topology with matched base resistors, AEC-Q101 qualification, SOT563 thermal performance (RθJA = 833°C/W), and guaranteed −50V breakdown rating under automotive ambient conditions.
Technical Context
This device integrates two identical PNP transistors with on-die 10kΩ base-emitter and base-collector resistors per channel, eliminating external bias components. Its epitaxial planar construction ensures stable hFE across −55°C to +150°C and supports fast switching up to 250MHz fT.
Designed for high-reliability automotive applications, it meets AEC-Q101 stress test requirements and operates with input voltage range of −1.1V (VL(OFF)) to −3.0V (VL(ON)) at VCC = −5V, delivering consistent −0.1V output saturation under −10mA load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50V - Withstands reverse collector-emitter voltage up to −50V without breakdown, enabling use in 24V automotive supply rails with margin. |
| IO (Max) | −100mA - Supports dual-channel switching loads up to 100mA per transistor, sufficient for LED drivers and relay coils. |
| VCE(SAT) | −0.3V @ −2.5mA/−0.25mA - Low saturation voltage minimizes power loss and self-heating in always-on control paths. |
| hFE | 100–600 @ −1mA, −5V - Wide DC current gain range allows robust biasing across process and temperature variation. |
| fT | 250MHz - Enables signal amplification or high-speed switching in low-power RF front-end stages or clock buffers. |
| R1 / R2 | 10kΩ / 10kΩ - Matched internal bias resistors simplify PCB layout and eliminate discrete resistor placement for each channel. |
| PD | 150mW - Power dissipation limit compatible with SOT563 footprint on FR4 boards using recommended pad layout. |
Pinout & Package
SOT563 surface-mount package: 6-pin, dual-transistor configuration with common emitter connection per channel; molded plastic case rated UL 94V-0, 0.005g weight, matte tin-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter (Channel A) | Common emitter node for first PNP transistor; tied directly to PCB ground plane in typical switch configurations. |
| 2 | Base (Channel A) | Input node with internal 10kΩ resistor to emitter (Pin 1) and 10kΩ resistor to collector (Pin 3). |
| 3 | Collector (Channel A) | Output node connected through internal 10kΩ resistor to base (Pin 2); sinks current when driven low at base. |
| 4 | Emitter (Channel B) | Common emitter node for second PNP transistor; electrically isolated from Pin 1 but same potential in dual-channel layout. |
| 5 | Base (Channel B) | Input node with internal 10kΩ resistor to emitter (Pin 4) and 10kΩ resistor to collector (Pin 6). |
| 6 | Collector (Channel B) | Output node connected through internal 10kΩ resistor to base (Pin 5); functionally identical to Pin 3. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood operation including temperature cycling, HTRB, and ESD testing per JESD47. |
| Dual PNP with matched R1/R2 | Two independent channels share identical 10kΩ/10kΩ resistor network, reducing component count and layout mismatch risk. |
| SOT563 footprint | Compact 2.2mm × 1.35mm outline enables high-density routing in space-constrained ECUs and sensor nodes. |
| Lead-free & Green compliant | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb), fully RoHS 2 compliant for global automotive supply chains. |
Applications
| Automotive Door Module | Industrial Proximity Sensor Interface |
|---|---|
Use Scenario: Controlling window lift motors and mirror adjustment actuators via microcontroller GPIOs. IC Role / Device Role / Timing Role: Dual-channel level-shifting switch translating 3.3V logic to −12V load drive with built-in biasing. Use Value: Eliminates four external resistors per module, reducing BOM cost by $0.012/unit and improving assembly yield. |
Use Scenario: Driving NPN phototransistor outputs in factory-floor object detection sensors. IC Role / Device Role / Timing Role: Inverting amplifier stage converting weak collector-current signals into clean digital logic levels. Use Value: Guaranteed −0.3V VCE(SAT) ensures TTL-compatible low-state margins even at −40°C ambient. |
| LED Status Indicator Bank | Power Supply Enable Sequencing |
Use Scenario: Simultaneous on/off control of six status LEDs in medical diagnostic equipment panels. IC Role / Device Role / Timing Role: Dual high-side current sink managing two LED strings with shared cathode return path. Use Value: Matched hFE (100–600) and R1/R2 values ensure uniform brightness across channels without trimming. |
Use Scenario: Enabling 5V and 3.3V LDOs in sequence during system boot in telecom base station controllers. IC Role / Device Role / Timing Role: Cascaded enable gate controlling upstream/downstream regulator EN pins with precise turn-on delay. Use Value: Verified −50V VCEO withstands transient coupling from adjacent 48V PoE circuitry without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-PNP pre-biased transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DDA114EH-7 | R1 = 10kΩ, R2 = 10kΩ; identical bias network but lower IO rating (−50mA vs −100mA). | Rated for lower current loads only; unsuitable for >50mA relay drivers or LED banks. | Select when load current stays below 50mA and cost sensitivity outweighs headroom needs. |
| DDA143TH-7 | R1 = 4.7kΩ, R2 = 47kΩ; asymmetric bias network optimized for higher gain at low base drive. | Better suited for microcontroller GPIOs with limited sink capability (e.g., 1mA max). | Prefer when driving from weak-output MCUs or requiring hFE > 300 at IC = −0.1mA. |
Compared with DDA114EH-7, DDA114TH-7 delivers double the output current headroom while retaining identical resistor matching; versus DDA143TH-7, it trades asymmetric bias flexibility for symmetrical channel behavior and tighter VCE(SAT) consistency across load range.
Availability
DDA114TH-7 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and medical LED indicator systems requiring stable component supply and AEC-Q101 compliance.
Supply support for DDA114TH-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DDA series targets automotive-grade pre-biased transistors, designed specifically to replace discrete BJT + resistor combinations in space- and reliability-critical control circuits.
FAQ
Is DDA114TH-7 pin-compatible with DDA114EH-7?
Yes - both use identical SOT563 pinout and dual-PNP topology. However, DDA114TH-7 supports −100mA per channel versus −50mA for DDA114EH-7, so substitution requires verifying load current limits and thermal derating curves.
What is the maximum operating temperature for continuous use?
The device is rated for TJ = −55°C to +150°C. At TA = +85°C, derated power dissipation is 75mW (per Fig. 1), requiring ≤0.75mm² copper pour per channel on FR4 to maintain junction temperature within limit.
Does DDA114TH-7 support 12V automotive battery disconnect scenarios?
Yes - its −50V VCEO and −50V VCBO ratings exceed ISO 7637-2 pulse 5a (−100V/50ms) clamping requirements when used with appropriate TVS protection, making it suitable for unswitched battery rail monitoring.
Can DDA114TH-7 be used in linear amplifier mode?
No - it is characterized and qualified exclusively for switching operation. The hFE specification applies only at VCE = −5V and IC = −1mA; no linearity, THD, or small-signal parameters are specified in DS30420 Rev. 6-2.
DDA114TH-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 250MHz
- Power - Max:
- 150mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DDA114TH-7 FAQ
1.How can I place an order for DDA114TH-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DDA114TH-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDA114TH-7 reliable?
The price and inventory of DDA114TH-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDA114TH-7 is usually 5 days.
3.What payment methods are accepted for DDA114TH-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDA114TH-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDA114TH-7?
DDA114TH-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDA114TH-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDA114TH-7?
For technical support, including DDA114TH-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDA114TH-7 requirements.
6.How does Aetrix verify that DDA114TH-7 is sourced from the original manufacturer or authorized distributors?
All DDA114TH-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDA114TH-7 meets industry standards.
7.What is the process for return or replacement of DDA114TH-7?
All DDA114TH-7 units undergo pre-shipment inspection (PSI). If there is an issue with DDA114TH-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDA114TH-7 part is unused and in its original packaging.
Return procedure for DDA114TH-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDA114TH-7 Tags
-
SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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