Diodes Incorporated DDA123JU-7-F

Overview

DDA123JU-7-F from Diodes Incorporated is a PNP pre-biased dual transistor in SOT363 package, featuring integrated 2.2 kΩ and 47 kΩ bias resistors, −50 V V_CBO, −100 mA I_O output current capability, and −0.3 V V_CE(sat) at −5 mA/−0.25 mA drive-used for level-shifting and digital logic interface in compact power management circuits.

For engineers reviewing the DDA123JU-7-F datasheet, DDA123JU-7-F pinout, DDA123JU-7-F application, or DDA123JU-7-F equivalent, this page delivers verified electrical parameters, validated SOT363 terminal mapping, real-world use cases in automotive signal conditioning and industrial I/O buffering, and two confirmed alternative parts with documented R1/R2 and gain differences.

Technical Context

This dual PNP transistor integrates two identical pre-biased elements sharing common emitter connections (pins 1 & 4), each with dedicated base resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) enabling direct TTL/CMOS-compatible switching without external bias networks. It operates across −55 °C to +150 °C with 200 mW total power dissipation.

The device delivers guaranteed −100 mA output current per channel at V_CC = −50 V, with V_I(on) = −0.5 V and V_O(on) = −0.3 V under −5 mA load, supporting fast turn-on in low-voltage logic translation and open-collector bus driving applications.

Key Specifications

Pinout & Package

Package: SOT363 - 6-pin, surface-mount, lead-free, halogen-free molded plastic package with 0.65 mm pitch, UL 94V-0 rating, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pre-biased dual PNP transistor applications.

Compared with DDA123JU-7-F, DDA114YU-7-F offers higher input impedance at lower V_I(on), while DDA144EU-7-F trades speed for noise immunity via matched resistors-making DDA123JU optimal for balanced performance in space-constrained, medium-speed logic translation.

Availability

DDA123JU-7-F is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and medical device status indication requiring stable component supply and full traceability.

Supply support for DDA123JU-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

This part belongs to Diodes' DDA-series pre-biased transistor family, engineered specifically for reducing component count and improving reliability in automotive signal conditioning and industrial digital interface applications.

FAQ

What is the maximum allowable junction temperature for DDA123JU-7-F?

The absolute maximum junction temperature is +150 °C, with derating beginning at +25 °C ambient. At 25 °C, full 200 mW power dissipation is permitted; above that, power must be linearly reduced at 0.16 mW/°C based on R_θJA = 625 °C/W. Thermal pad layout per Diodes' recommended footprint is required to achieve this rating.

Can DDA123JU-7-F replace a discrete PNP transistor plus two resistors in existing designs?

Yes-DDA123JU-7-F directly substitutes one PNP transistor plus its two base bias resistors (2.2 kΩ and 47 kΩ), occupying the same SOT363 footprint. Pin compatibility is exact: emitter (1/4), base (2/5), collector (3/6). No layout changes are needed beyond removing the two discrete resistors and re-routing the base input to pins 2 and 5.

Is there an automotive-grade version of DDA123JU-7-F?

Yes-the DDA123JUQ-7-F is the AEC-Q101 qualified variant, manufactured in IATF 16949 certified facilities, PPAP capable, and supported with automotive-specific change control. It shares identical electrical specs and pinout but carries different date-code marking and qualification documentation.

What is the typical input leakage current when the device is off?

IO(off) is specified at ≤ −0.5 μA at V_CC = −50 V and V_I = 0 V, measured per DS30346 Rev. 14–2. This ultra-low leakage enables reliable hold states in battery-critical applications such as portable medical devices, where standby current must remain below 1 μA per channel.