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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Diodes Incorporated FMMTH10TA

Name: FMMTH10TA
Brand: Diodes Incorporated
SKU: FMMTH10TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FMMTH10TA

Manufacturer:: Diodes Incorporated

Category:: Bipolar RF Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: FMMTH10TA.pdf

Description:: RF TRANS NPN 25V 650MHZ SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,338

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Product details

Overview

FMMTH10TA from ON Semiconductor is an NPN silicon planar RF transistor in SOT-23 package, designed for high-frequency amplification up to 650 MHz. It delivers low noise figure (3–5 dB at 500 MHz), low capacitance (0.7 pF Ccb), and operates with V_CEO = 25 V, I_C = 25 mA, and P_tot = 330 mW - suitable for VHF/UHF RF amplifier stages in portable radios and wireless receivers.

For engineers reviewing the FMMTH10TA datasheet, FMMTH10TA pinout, FMMTH10TA application, or FMMTH10TA equivalent, key selection criteria include f_T performance at 4 mA bias, noise figure under 500 MHz small-signal conditions, C_cb stability across V_CB, V_BE(on) consistency at I_C = 4 mA, and thermal robustness across −55°C to +150°C junction range.

Technical Context

This RF transistor employs a planar epitaxial structure optimized for stable gain and low noise in narrowband VHF amplifiers. Its f_T of 650 MHz and typical C_rb of 0.45–0.65 pF enable predictable matching at 400–900 MHz bands when biased at I_C = 4 mA, V_CE = 10 V.

The device uses a three-terminal SOT-23 configuration with emitter-grounded topology. V_(BR)CEO = 25 V and V_CE(sat) ≤ 0.5 V at I_C = 4 mA / I_B = 0.4 mA support Class-A linear operation in low-power RF driver stages without thermal runaway risk.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	650 MHz - defines usable small-signal gain bandwidth limit for amplifier design at I_C = 4 mA, V_CE = 10 V
C_cb	0.7 pF - sets input impedance and matching network Q at V_CB = 10 V, critical for 500 MHz noise optimization
NF	3–5 dB at 500 MHz - quantifies added noise in receiver front-end LNA applications with I_C = 2 mA, V_CE = 5 V
V_CEO	25 V - maximum safe collector-emitter voltage under open-base condition, limits supply rail headroom
h_FE	60 min at I_C = 4 mA - ensures sufficient DC current gain for stable bias network design in fixed-gain stages
P_tot	330 mW at T_amb = 25°C - constrains continuous RF output power in unheatsinked SOT-23 layouts

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; standardized pin assignment per JEDEC TO-236AB. Thermal resistance R_θJA ≈ 300°C/W enables operation up to +150°C junction temperature with minimal PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to RF ground reference; lowest impedance path for bias return and signal common
2 (Base)	Control input	DC bias and RF input node; requires series R/C network for stability due to low C_rb
3 (Collector)	Active output terminal	RF output and DC supply feed point; matched to 50 Ω via shunt capacitor or microstrip stub

Key Features

Feature	Design Value
High transition frequency	f_T = 650 MHz supports stable gain in 400–900 MHz receiver IF and RF amplifier stages
Low noise figure	NF = 3–5 dB at 500 MHz enables use in sensitive VHF front-ends without external LNA cascading
Low capacitance	C_cb = 0.7 pF minimizes Miller effect, easing input matching and improving reverse isolation
Robust breakdown ratings	V_CEO = 25 V and V_EBO = 3 V allow reliable operation in battery-powered 3.3–5 V RF systems
Thermal stability	Rated T_j = −55°C to +150°C supports automotive and industrial environments without derating

Applications

FM Radio Front-End Amplifier

UHF Wireless Microphone Receiver

Use Scenario: Low-noise amplification of 88–108 MHz FM broadcast signals prior to mixer stage.

IC Role / Device Role / Timing Role: Single-stage common-emitter RF amplifier with fixed bias network and 50 Ω input/output matching.

Use Value: 3–5 dB NF at 100 MHz preserves SNR in weak-signal reception; 0.7 pF C_cb simplifies broadband matching.

Use Scenario: First-stage amplification in 470–698 MHz UHF wireless microphone receivers.

IC Role / Device Role / Timing Role: Small-signal RF gain block operating at I_C = 4 mA, V_CE = 10 V with tuned LC input network.

Use Value: 650 MHz f_T ensures >15 dB gain margin at 600 MHz; SOT-23 footprint enables compact PCB layout.

ISM Band Sensor Transmitter

Portable Two-Way Radio PA Driver

Use Scenario: 915 MHz ISM-band sensor node transmitter output stage driving a Class-C PA.

IC Role / Device Role / Timing Role: Buffer amplifier isolating crystal oscillator from PA load variations.

Use Value: Low C_cb and high f_T maintain oscillator stability while delivering clean 915 MHz drive signal.

Use Scenario: Driver stage for 136–174 MHz VHF two-way radio final amplifier.

IC Role / Device Role / Timing Role: Linear Class-A RF amplifier with emitter degeneration resistor for gain control.

Use Value: V_CEO = 25 V supports 12 V supply rails; h_FE ≥ 60 ensures predictable bias point across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF901T1	f_T = 500 MHz, C_cb = 0.8 pF, NF = 4.5 dB @ 500 MHz	Lower gain-bandwidth product; higher capacitance reduces matching flexibility above 400 MHz	Prefer where lower cost and proven reliability in legacy VHF designs outweigh f_T loss
BFR92A	f_T = 700 MHz, C_cb = 0.5 pF, NF = 2.8 dB @ 500 MHz, V_CEO = 20 V	Higher f_T and lower NF but reduced breakdown margin limits 12 V supply compatibility	Choose for ultra-low-noise 500 MHz LNA where V_CEO derating to 15 V is acceptable

Compared with MRF901T1 and BFR92A, FMMTH10TA offers balanced f_T/NF/C_cb trade-off with superior V_CEO rating - ideal for new designs requiring 25 V headroom and stable 500 MHz performance without premium pricing.

Availability

FMMTH10TA is available at Aetrix Electronics and suitable for FM radio front-ends, UHF wireless microphone receivers, and ISM-band sensor transmitters requiring stable component supply and consistent RF parametric performance across production lots.

Supply support for FMMTH10TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and communications markets.

FMMTH10TA belongs to ON Semiconductor's legacy RF bipolar transistor product line, engineered for cost-sensitive, high-volume VHF/UHF amplification where low noise, predictable f_T, and SOT-23 manufacturability are prioritized.

FAQ

What is the recommended DC bias condition for optimal noise figure at 500 MHz?

Optimal noise figure (3–5 dB) is achieved at I_C = 2 mA and V_CE = 5 V, as specified in the Electrical Characteristics table. Base bias must be stabilized with a resistive divider and bypass capacitor to minimize thermal drift and ensure repeatable NF across temperature.

Can FMMTH10TA be used in Class-C amplifier configurations?

No - FMMTH10TA is characterized and optimized for linear Class-A operation. Its h_FE variation with current and lack of pulsed-ratings make it unsuitable for saturated switching or harmonic-rich Class-C topologies without extensive validation.

Is Spice model support available for circuit simulation?

Yes - ON Semiconductor provides verified SPICE parameter data for FMMTH10TA upon request through their technical support portal. The model includes temperature-dependent junction capacitances, transit time, and parasitic resistances validated against measured S-parameters.

How does the SOT-23 package affect thermal performance in continuous RF operation?

At 330 mW P_tot, the SOT-23 package achieves ~120°C/W junction-to-ambient thermal resistance on standard FR-4 with 1 cm² copper pour. Derating to 200 mW is advised for ambient > 70°C to maintain T_j < 125°C in sustained RF output.

FMMTH10TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 25V

Frequency - Transition:: 650MHz

Noise Figure (dB Typ @ f):: 3dB ~ 5dB @ 500MHz

Gain:: -

Power - Max:: 330mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 4mA, 10V

Current - Collector (Ic) (Max):: 25mA

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

FMMTH10TA FAQ

1.How can I place an order for FMMTH10TA through Aetrix?

Please submit a Request for Quotation (RFQ) for FMMTH10TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FMMTH10TA reliable?

The price and inventory of FMMTH10TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMTH10TA is usually 5 days.

3.What payment methods are accepted for FMMTH10TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMTH10TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FMMTH10TA?

FMMTH10TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FMMTH10TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FMMTH10TA?

For technical support, including FMMTH10TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMTH10TA requirements.

6.How does Aetrix verify that FMMTH10TA is sourced from the original manufacturer or authorized distributors?

All FMMTH10TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMTH10TA meets industry standards.

7.What is the process for return or replacement of FMMTH10TA?

All FMMTH10TA units undergo pre-shipment inspection (PSI). If there is an issue with FMMTH10TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FMMTH10TA part is unused and in its original packaging.

Return procedure for FMMTH10TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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