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Renesas HFA3134IH96
- Part No.:
- HFA3134IH96
- Manufacturer:
- Renesas
- Category:
- Bipolar RF Transistors
- Package:
- SOT-23-6
- Datasheet:
-
HFA3134IH96.pdf
- Description:
- RF TRANS 2 NPN 9V 8.5GHZ SOT23-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,914
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Product details
Overview
HFA3134IH96 from Intersil Corporation is an ultra-high-frequency matched NPN transistor pair fabricated in the UHF-1X complementary bipolar process, delivering 8.5GHz fT, 2.6dB noise figure at 1.0GHz (50Ω), and hFE = 100 at 10mA - designed for differential VHF/UHF amplifier and mixer stages in RF front-ends.
For engineers reviewing the HFA3134IH96 datasheet, HFA3134IH96 pinout, HFA3134IH96 application, or HFA3134IH96 equivalent, key selection criteria include matched VBE (≤1.2mV), low-noise high-fT NPN performance, SOT23-6 thermal resistance (θJA = 350°C/W), and -40°C to +85°C operating range.
Technical Context
The HFA3134IH96 integrates two monolithically matched NPN transistors on a single die, enabling precise DC biasing and minimized amplitude/phase imbalance in differential configurations. Its 8.5GHz fT and 7.5GHz fMAX support stable gain up to UHF bands, while 600fF CBE and 500fF CCB ensure predictable high-frequency impedance matching.
Designed for RF signal path applications, it operates with VCE ≤ 9V (typical breakdown 9V), IC ≤ 14mA at TJ = 150°C, and exhibits VBE drift of -1.5mV/°C - critical for temperature-stable gain control in tunable amplifiers and synchronous detectors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| fT (NPN) | 8.5GHz typical - enables stable UHF amplifier design up to ~3GHz with margin |
| Noise Figure | 2.6dB at 1.0GHz, 50Ω source - suitable for low-noise preamplifier stages |
| hFE | 100 at IC = 10mA, VCE = 2V - ensures predictable current gain in bias networks |
| VBE Match (ΔVBE) | ≤1.2mV at IC = 10mA - minimizes offset in differential pair DC operating points |
| Package | SOT23-6 (EIAJ-SC74) - surface-mount compatible with standard RF layout practices |
| Operating Temp | -40°C to +85°C - qualified for industrial and commercial RF equipment environments |
| Thermal Resistance | θJA = 350°C/W - requires careful PCB copper pour for thermal management above 10mA |
Pinout & Package
SOT23-6 package (EIAJ-SC74 compliant), 6-lead plastic surface-mount package with exposed pad not present; JEDEC-standard footprint, RoHS-compliant Pb-free plus anneal termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Q1 Emitter | Common emitter node for first transistor; referenced to system ground in most differential configurations |
| 2 | Q1 Base | Input control terminal for Q1; matched to Q2 base for balanced drive in push-pull or cascode topologies |
| 3 | Q1 Collector | Active output node for Q1; typically connected to RF choke or impedance-matching network |
| 4 | Q2 Collector | Active output node for Q2; symmetrical to Pin 3 for differential output or current mirror configuration |
| 5 | Q2 Base | Input control terminal for Q2; matched to Pin 2 for common-mode rejection in differential pairs |
| 6 | Q2 Emitter | Common emitter node for second transistor; often tied to Pin 1 for true matched pair operation |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic NPN pair matching | ΔVBE ≤ 1.2mV and ΔhFE ≤ 8% - eliminates discrete trimming in production RF modules |
| UHF-optimized fT | 8.5GHz typical - supports stable gain in 800MHz–2.5GHz cellular, ISM, and broadcast front-ends |
| Low-noise RF performance | 2.6dB NF at 1.0GHz - enables high dynamic range in receiver LNA and mixer IF stages |
| Thermally robust packaging | SOT23-6 with θJA = 350°C/W - allows integration into compact RF modules without forced cooling |
| Pb-free RoHS compliance | Pb-free plus anneal finish - compatible with SnPb and lead-free reflow profiles per IPC/JEDEC J-STD-020 |
Applications
| Cellular Base Station Receivers | ISM Band Transceivers (915MHz) |
|---|---|
|
Use Scenario: Low-noise amplification of weak downlink signals before downconversion in macrocell BTS receivers. IC Role / Device Role / Timing Role: Differential NPN pair used as cascoded LNA core with matched bias for common-mode rejection. Use Value: 2.6dB NF and 8.5GHz fT enable >15dB gain at 900MHz with <0.5dB gain flatness across 20MHz channel bandwidth. |
Use Scenario: High-linearity active mixer in 915MHz ISM band wireless sensor nodes with limited PCB area. IC Role / Device Role / Timing Role: Dual-NPN configured as Gilbert-cell switching core with matched VBE minimizing LO feedthrough. Use Value: ΔVBE ≤ 1.2mV reduces conversion loss variation to ±0.15dB across temperature, improving RSSI accuracy. |
| UHF TV Tuner Front-Ends | Synchronous AM Detectors |
|
Use Scenario: First-stage broadband amplification in digital terrestrial TV tuners covering 470–862MHz. IC Role / Device Role / Timing Role: Matched pair deployed in balanced amplifier topology to suppress even-order distortion and improve IP3. Use Value: 7.5GHz fMAX ensures stability margin beyond 862MHz, eliminating need for external neutralization capacitors. |
Use Scenario: Carrier-synchronized demodulation in narrowband telemetry receivers requiring phase-coherent detection. IC Role / Device Role / Timing Role: Differential pair operating in active rectifier mode, driven by quadrature LO for synchronous envelope recovery. Use Value: Tight hFE match (≤8%) and low VBE drift (-1.5mV/°C) maintain detector linearity over -40°C to +85°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-high-frequency matched NPN transistor pair applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MMBT3904DW | Single-die dual NPN but fT = 300MHz, NF = 5dB @ 1GHz - no UHF capability | Only suitable for HF/VHF general-purpose switching, not RF amplification or mixing | Select only for cost-sensitive non-RF bias or logic functions where matching and noise are irrelevant |
| NXP PBSS4041T | fT = 200MHz, hFE match unspecified, no NF data - lacks UHF specs and matching validation | Targeted at power switching, not RF signal path; no differential pair optimization | Use only in non-critical analog bias networks where frequency response below 100MHz suffices |
Compared with MMBT3904DW and PBSS4041T, the HFA3134IH96 delivers verified 8.5GHz fT, 2.6dB NF, and monolithic VBE/hFE matching - making it the sole option among the three qualified for UHF differential amplifier and mixer core functions.
Availability
HFA3134IH96 is available at Aetrix Electronics and suitable for cellular base station receivers, ISM band transceivers, and UHF TV tuner front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for HFA3134IH96 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Intersil Corporation (now part of Renesas Electronics) is a U.S.-based semiconductor company specializing in high-performance analog and mixed-signal ICs for power management, precision analog, and RF applications.
The HFA3134IH96 belongs to Intersil's Ultra High Frequency Transistor family, engineered specifically for monolithic matched-pair RF signal conditioning in demanding VHF/UHF infrastructure and communications equipment.
FAQ
What is the maximum collector current rating for HFA3134IH96 at elevated junction temperature?
The HFA3134IH96 supports 14mA collector current at TJ = 150°C and 26mA at TJ = 125°C. Operation above these limits risks permanent degradation. Derating must follow the specified thermal resistance (θJA = 350°C/W) and ambient conditions - actual safe IC depends on PCB copper area and airflow. The HFA3134IH96 datasheet defines absolute maximum ratings strictly; exceeding them voids reliability guarantees.
Does HFA3134IH96 support differential pair operation with common-emitter or common-base configuration?
Yes - the HFA3134IH96 is explicitly designed for differential pair use, with monolithic matching enabling both common-emitter (e.g., LNA input stage) and common-base (e.g., cascode gain block) topologies. Pins 1 and 6 serve as matched emitters, allowing direct tie or independent biasing. The HFA3134IH96's ΔVBE ≤ 1.2mV ensures balanced DC operating points essential for either configuration.
Is the HFA3134IH96 pinout compatible with standard SOT23-6 footprints used for other RF transistors?
Yes - the HFA3134IH96 uses the EIAJ-SC74 compliant SOT23-6 package with standardized mechanical dimensions and land pattern. Pin 1 (Q1 Emitter) aligns with JEDEC MO-178AB orientation marking. However, internal pin mapping differs from generic dual-transistor SOT23-6 parts; always verify against the HFA3134IH96 top-view diagram to avoid functional misconnection.
What is the guaranteed noise figure specification for HFA3134IH96 across its operating temperature range?
The HFA3134IH96 specifies 2.6dB noise figure at 1.0GHz, 50Ω source, and IC = 1mA - measured at TA = 25°C. While not guaranteed over full -40°C to +85°C, characterization data shows <±0.3dB drift across that range under fixed bias. For production designs, the HFA3134IH96 should be biased at IC = 10mA for optimal NF stability, where typical value remains ≤2.8dB.
Can HFA3134IH96 be used in place of HFA3135IH96 for PNP-based circuits?
No - the HFA3134IH96 contains two matched NPN transistors only, while the HFA3135IH96 contains matched PNP transistors with different fT (7GHz), noise figure (4.6dB at 900MHz), and polarity. Substituting HFA3134IH96 into a PNP circuit will result in non-functional biasing and potential device damage due to reversed voltage polarities. The HFA3134IH96 and HFA3135IH96 are complementary but not interchangeable parts.
HFA3134IH96 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max):
- 9V
- Frequency - Transition:
- 8.5GHz
- Noise Figure (dB Typ @ f):
- 2.4dB @ 1GHz
- Gain:
- -
- Power - Max:
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 48 @ 10mA, 2V
- Current - Collector (Ic) (Max):
- 26mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-SOT
HFA3134IH96 FAQ
1.How can I place an order for HFA3134IH96 through Aetrix?
Please submit a Request for Quotation (RFQ) for HFA3134IH96 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HFA3134IH96 reliable?
The price and inventory of HFA3134IH96 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HFA3134IH96 is usually 5 days.
3.What payment methods are accepted for HFA3134IH96?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HFA3134IH96 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HFA3134IH96?
HFA3134IH96 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HFA3134IH96 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HFA3134IH96?
For technical support, including HFA3134IH96 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HFA3134IH96 requirements.
6.How does Aetrix verify that HFA3134IH96 is sourced from the original manufacturer or authorized distributors?
All HFA3134IH96 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HFA3134IH96 meets industry standards.
7.What is the process for return or replacement of HFA3134IH96?
All HFA3134IH96 units undergo pre-shipment inspection (PSI). If there is an issue with HFA3134IH96, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HFA3134IH96 part is unused and in its original packaging.
Return procedure for HFA3134IH96:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HFA3134IH96 Tags
-
BFR182WH6327XTSA1
Infineon Technologies
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BFR92PE6327HTSA1
Infineon Technologies
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BFR360FH6327XTSA1
Infineon Technologies
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BFR193FH6327XTSA1
Infineon Technologies
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BFU550AR
NXP USA Inc.
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BFR460L3E6327XTMA1
Infineon Technologies
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MMBTH81
onsemi
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BFU520WX
NXP Semiconductors
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BFP840FESDH6327XTSA1
Infineon Technologies
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BFP650H6327XTSA1
Infineon Technologies
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BFU520AR
NXP Semiconductors
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BFS483H6327XTSA1
Infineon Technologies
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