Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSC2786YTA

Part No.:
KSC2786YTA
Manufacturer:
onsemi
Category:
Bipolar RF Transistors
Package:
TO-226-3, TO-92-3 Short Body
Datasheet:
AetrixKSC2786YTA.pdf
Description:
RF TRANS NPN 20V 600MHZ TO92S
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,860

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSC2786YTA from Fairchild Semiconductor is an NPN epitaxial silicon transistor optimized for RF amplification in TV PIF and FM tuner front-ends, mixer, and oscillator stages. It delivers fT = 600 MHz (typ), GPE = 22 dB at 100 MHz, VCE(sat) = 0.3 V max at IC = 10 mA/IB = 1 mA, and hFE = 120–240 (Y-class), housed in a TO-92S package.

For engineers reviewing the KSC2786YTA datasheet, pinout, applications, or equivalent options, key selection criteria include its high-frequency gain-bandwidth performance, low-noise figure (3.0–5.0 dB at 100 MHz), saturation voltage behavior, DC current gain classification, and TO-92S leadform compatibility with manual or wave-soldered RF board layouts.

Technical Context

The KSC2786YTA employs an epitaxial base structure to achieve high fT and stable hFE across its Y-class range (120–240). Its low Cob = 1.2 pF and Cc·rbb' = 15 ps support wideband RF operation up to VHF/UHF bands without excessive phase shift or instability.

Designed for small-signal amplification, it operates with VCE ≤ 20 V and IC ≤ 20 mA, featuring low VBE(on) = 0.72 V and tight VCE(sat) spec (0.1–0.3 V) - enabling efficient biasing in Class-A or Class-C oscillator and amplifier topologies where thermal stability and gain linearity are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO20 V - Maximum safe collector-emitter voltage before breakdown; defines usable supply headroom in RF amplifier stages.
fT600 MHz (typ) - Current-gain bandwidth limit; enables stable amplification up to ~100 MHz with margin for layout parasitics.
hFE (Y-class)120–240 - Tight DC current gain binning ensures predictable bias point and gain consistency across production lots.
GPE22 dB at 100 MHz - Small-signal power gain; sufficient for single-stage PIF or FM IF amplification without cascading.
NF3.0–5.0 dB at 100 MHz - Low noise figure supports high-SNR signal reception in tuner front-ends.
Cob1.2 pF - Low output capacitance minimizes Miller effect and maintains bandwidth in common-emitter configurations.
VCE(sat)0.1–0.3 V - Enables low-loss switching or saturated oscillator operation with minimal voltage drop across collector-emitter.

Pinout & Package

Package: TO-92S - 3-lead through-hole plastic package with 1.27 mm lead pitch, 3.72 mm body width, and 4.00 mm height; optimized for RF layout with short internal leads and low inductance.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current sink terminalConnected to ground or bias network; low-impedance path for emitter degeneration or AC coupling in tuned amplifiers.
2 (Collector)Current source terminalDrives tuned load (e.g., LC tank); requires proper decoupling due to high-frequency gain sensitivity.
3 (Base)Control input terminalReceives bias or RF drive; high-impedance node requiring careful trace length control to avoid parasitic resonance.

Key Features

FeatureDesign Value
High fT performance600 MHz typical - supports stable amplification in VHF TV PIF (40–250 MHz) and FM tuner (88–108 MHz) bands.
Low-noise RF operationNF = 3.0–5.0 dB at 100 MHz - preserves signal integrity in weak-signal reception paths before IF processing.
Y-class hFE binning120–240 - reduces need for individual gain trimming in production tuner modules.
Low Cob and Cc·rbb'1.2 pF / 15 ps - suppresses high-frequency instability and improves matching in 50 Ω systems.
TO-92S RF-optimized form factorShort leads, compact footprint - minimizes parasitic inductance for direct integration into discrete RF PCBs.

Applications

TV PIF AmplifierFM Tuner RF Amplifier

Use Scenario: Amplifies intermediate frequency signals (45.75 MHz for NTSC) after mixer stage in analog television receivers.

IC Role / Device Role / Timing Role: Small-signal NPN amplifier operating in Class-A configuration with tuned collector load.

Use Value: Delivers >20 dB gain with <5 dB noise figure, maintaining SNR for demodulation of composite video signals.

Use Scenario: Boosts weak FM broadcast band signals (88–108 MHz) prior to mixing in superheterodyne tuner architectures.

IC Role / Device Role / Timing Role: RF front-end amplifier with grounded-emitter topology and LC impedance matching.

Use Value: Provides 22 dB power gain and 3–5 dB NF, enabling reliable reception at field strengths down to 25 µV/m.

Mixer StageOscillator Core

Use Scenario: Active mixer element in Gilbert-cell or single-transistor switching mixer designs for TV or FM tuners.

IC Role / Device Role / Timing Role: Switching transistor modulating local oscillator injection onto RF input path.

Use Value: Fast switching (fT = 600 MHz) and low VCE(sat) ensure high conversion gain and minimal LO feedthrough.

Use Scenario: Active device in Colpitts or Hartley oscillator circuits generating local oscillator frequencies (e.g., 110–140 MHz for FM).

IC Role / Device Role / Timing Role: Sustained oscillation core with Y-class hFE ensuring reliable startup and amplitude stability.

Use Value: High hFE and low Cob enable low-phase-noise oscillation with minimal external component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2SC3356(TE85L,F)fT = 7 GHz (typ), higher VCEO = 20 V, lower Cob = 0.7 pF, TO-92 package (not TO-92S)Better suited for UHF/1 GHz+ amplification; not pin-identical due to lead spacing and orientationSelect when higher frequency margin or lower capacitance is required; verify PCB pad compatibility.
BC550CfT = 300 MHz (max), hFE = 420–800, VCEO = 50 V, TO-92 - no RF-optimized specs or NF ratingGeneral-purpose amplifier; unsuitable for 100 MHz+ RF gain or low-noise tuner stagesUse only in non-critical audio or low-speed switching roles; not a functional substitute for KSC2786YTA's RF performance.

Compared with 2SC3356(TE85L,F) and BC550C, the KSC2786YTA offers balanced RF gain, noise, and saturation performance specifically binned and characterized for TV/FM tuner signal chains - whereas 2SC3356 targets higher frequencies with different mechanical fit, and BC550C lacks verified RF parameters entirely.

Availability

KSC2786YTA is available at Aetrix Electronics and suitable for TV PIF amplifiers, FM tuner RF front-ends, and discrete oscillator modules requiring stable component supply and consistent Y-class hFE performance.

Supply support for KSC2786YTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The KSC2786YTA belongs to Fairchild's legacy RF transistor product line, engineered for high-frequency analog signal conditioning in broadcast receiver systems - emphasizing gain stability, low noise, and manufacturable TO-92S packaging.

FAQ

What is the hFE classification for KSC2786YTA?

The "Y" suffix in KSC2786YTA denotes the hFE bin: 120–240 at VCE = 6 V and IC = 1 mA. This tight gain range ensures predictable biasing and gain uniformity in production TV and FM tuner modules, reducing calibration overhead. The KSC2786YTA data sheet explicitly lists Y-class as the highest gain bin among R (40–80) and O (70–140).

Does KSC2786YTA support operation at 100 MHz with usable gain?

Yes - the KSC2786YTA delivers GPE = 22 dB at 100 MHz and fT = 600 MHz (typ), confirming robust small-signal gain well above that frequency. Its low Cob = 1.2 pF and optimized epitaxial structure maintain phase stability in common-emitter amplifier configurations used in FM tuner RF stages. Measured y-parameter plots in the KSC2786YTA datasheet confirm usable gfe > 10 mS at 100 MHz.

What is the maximum collector current rating for KSC2786YTA?

The absolute maximum collector current for KSC2786YTA is IC = 20 mA at TA = 25°C. Derating applies above 25°C per the thermal resistance curve; continuous operation above 15 mA is recommended only with adequate PCB copper area or forced airflow. This rating aligns with its use in Class-A RF amplifiers and low-power oscillator cores, not switching or power applications.

Is KSC2786YTA pin-compatible with standard TO-92 transistors?

KSC2786YTA uses the TO-92S package - a variant of TO-92 with shorter leads and tighter pitch (1.27 mm vs. standard 1.27–1.30 mm), but identical 1–2–3 pinout order (Emitter–Collector–Base). While mechanically compatible with most TO-92 footprints, its RF-optimized internal construction and Y-class binning make it functionally distinct from generic TO-92 transistors like PN2222 or BC547.

What is the noise figure specification for KSC2786YTA?

The KSC2786YTA has a noise figure of 3.0–5.0 dB measured at VCE = 6 V, IC = 1 mA, RS = 50 Ω, and f = 100 MHz. This low NF enables high-fidelity signal amplification in weak-signal tuner front-ends, directly supporting analog TV and FM broadcast reception standards. The value is confirmed in the "Electrical Characteristics" table of the official KSC2786YTA datasheet.

KSC2786YTA Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Short Body
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
20V
Frequency - Transition:
600MHz
Noise Figure (dB Typ @ f):
3dB ~ 5dB @ 100MHz
Gain:
18dB ~ 22dB
Power - Max:
250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
Current - Collector (Ic) (Max):
20mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92S

KSC2786YTA FAQ

1.How can I place an order for KSC2786YTA through Aetrix?

Please submit a Request for Quotation (RFQ) for KSC2786YTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSC2786YTA reliable?

The price and inventory of KSC2786YTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC2786YTA is usually 5 days.

3.What payment methods are accepted for KSC2786YTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC2786YTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSC2786YTA?

KSC2786YTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSC2786YTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSC2786YTA?

For technical support, including KSC2786YTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC2786YTA requirements.

6.How does Aetrix verify that KSC2786YTA is sourced from the original manufacturer or authorized distributors?

All KSC2786YTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC2786YTA meets industry standards.

7.What is the process for return or replacement of KSC2786YTA?

All KSC2786YTA units undergo pre-shipment inspection (PSI). If there is an issue with KSC2786YTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSC2786YTA part is unused and in its original packaging.

Return procedure for KSC2786YTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSC2786YTA Tags

  • KSC2786YTA
  • KSC2786YTA PDF
  • KSC2786YTA Datasheet
  • KSC2786YTA Specifications
  • KSC2786YTA Images
  • onsemi
  • onsemi KSC2786YTA
  • Buy KSC2786YTA
  • KSC2786YTA Price
  • KSC2786YTA Distributor
  • KSC2786YTA Supplier
  • KSC2786YTA Wholesale
Related Products
BFR182WH6327XTSA1
BFR182WH6327XTSA1

Infineon Technologies

BFR92PE6327HTSA1
BFR92PE6327HTSA1

Infineon Technologies

BFR360FH6327XTSA1
BFR360FH6327XTSA1

Infineon Technologies

BFR193FH6327XTSA1
BFR193FH6327XTSA1

Infineon Technologies

BFU550AR
BFU550AR

NXP USA Inc.

BFR460L3E6327XTMA1
BFR460L3E6327XTMA1

Infineon Technologies

MMBTH81
MMBTH81

onsemi

BFU520WX
BFU520WX

NXP Semiconductors

BFP840FESDH6327XTSA1
BFP840FESDH6327XTSA1

Infineon Technologies

BFP650H6327XTSA1
BFP650H6327XTSA1

Infineon Technologies

BFU520AR
BFU520AR

NXP Semiconductors

BFS483H6327XTSA1
BFS483H6327XTSA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER