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Analog Devices Inc./Maxim Integrated MAX2602ESA+T
- Part No.:
- MAX2602ESA+T
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Bipolar RF Transistors
- Package:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Datasheet:
-
MAX2602ESA+T.pdf
- Description:
- RF TRANS NPN 15V 1GHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:7,675
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Product details
Overview
MAX2602ESA+T from Maxim Integrated is a silicon bipolar RF power transistor with integrated biasing diode, designed as the final-stage amplifier in 900MHz portable transmitters. It delivers 1W RF output at 3.6V, achieves 58% collector efficiency, and maintains -28dBc ACPR under IS-54 π/4 DQPSK modulation at 4.8V - used in microcellular GSM Power Class 5 handsets and narrow-band PCS systems.
For engineers reviewing the MAX2602ESA+T datasheet, MAX2602ESA+T pinout, MAX2602ESA+T application, or MAX2602ESA+T equivalent, this page provides verified thermal, RF, and bias-network specifications - including SOIC-8 package layout, BIAS pin functionality, collector-emitter sustaining voltage (15V), and thermal-matched diode current scaling (1/15 × IC).
Technical Context
The MAX2602ESA+T operates in common-emitter configuration with dual-collector (Pins 1 & 8) and quad-emitter (Pins 2, 3, 6, 7 + backside slug) connections to minimize parasitic inductance. Its integrated biasing diode (Pin 4 anode) is thermally and process-matched to the RF transistor, enabling stable quiescent collector current across -40°C to +85°C.
It supports DC-to-1GHz operation with optimized source/load impedances (e.g., ZS = 5.5 + j2.0Ω, ZL = 6.5 + j1.5Ω at 836MHz). No negative bias or drain switch is required, simplifying power sequencing versus GaAsFET alternatives while enabling operation down to 3.0V battery voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power | 1W (30dBm) at 900MHz, 3.6V supply - sufficient for GSM Power Class 5 and narrow-band PCS final-stage amplification |
| Collector Efficiency | 58% at POUT = 30dBm, VCC = 3.6V - reduces thermal load and extends battery life in portable Li-Ion/NiMH-powered devices |
| ACPR | -28dBc under IS-54 π/4 DQPSK modulation at 4.8V - meets spectral mask requirements for digital cellular transmission |
| BIAS Diode VBR | 2.3V reverse breakdown - protects bias network from overvoltage during transient conditions |
| fT / fmax | DC to 1GHz operating range - validated for 433MHz ISM, 836MHz NADC, and 915MHz transmitter applications |
| VCES | 17V collector-emitter sustaining voltage - allows safe operation with 4.8V supply and transient headroom |
| Thermal Range | -40°C to +85°C - qualified for extended-temperature industrial and mobile handset environments |
Pinout & Package
The MAX2602ESA+T is housed in an 8-pin SOIC package (S8E-12) with exposed backside thermal slug soldered directly to PCB ground plane for low-inductance emitter return and enhanced thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 8 | Collector | Dual-pin collector connection reduces series inductance for improved RF gain and stability at 900MHz |
| 2, 3, 6, 7 | Emitter | Four emitter pins plus backside slug provide low-impedance RF ground path and efficient heat transfer to PCB |
| 4, 5 | Base | Dual-pin base connection minimizes base inductance; Pin 4 connects to BIAS diode anode via RF choke |
| 4 (anode) | BIAS Diode | Thermally matched diode with 1/15 × IC current scaling - enables temperature-stable bias without external compensation |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Biasing Diode | On-chip diode matched to transistor's thermal/process characteristics enables ±10% IC stability over -40°C to +85°C without external circuitry |
| Low-Voltage Operation | Full 1W output from single 3.6V Li-Ion cell - eliminates need for voltage inverters or charge pumps required by GaAsFETs |
| No Drain Switch Required | Direct ON/OFF control via base bias eliminates power loss and complexity of external drain-switch MOSFETs |
| Thermally Enhanced SOIC | Exposed backside slug soldered to ground plane achieves < 30°C/W junction-to-board thermal resistance |
| Stability Under Mismatch | Guaranteed no oscillation or parametric degradation at 8:1 VSWR across full frequency band - simplifies front-end filter design |
Applications
| Microcellular GSM Handsets | Narrow-Band PCS Transmitters |
|---|---|
|
Use Scenario: Final-stage RF power amplifier in Power Class 5 GSM handsets operating at 900MHz with 3.6V Li-Ion supply. IC Role / Device Role / Timing Role: High-efficiency common-emitter power transistor delivering 1W output with integrated thermal bias stabilization. Use Value: Enables 58% collector efficiency and -28dBc ACPR compliance without external bias compensation circuitry. |
Use Scenario: Transmit amplifier in NPCS infrastructure equipment requiring stable 900MHz output across temperature. IC Role / Device Role / Timing Role: Silicon bipolar RF transistor with matched BIAS diode for drift-free quiescent current control. Use Value: Maintains consistent POUT and linearity from -40°C to +85°C using on-die thermal tracking - reduces calibration overhead. |
| 915MHz ISM Transmitters | Two-Way Paging Systems |
|
Use Scenario: High-reliability RF PA in battery-powered 915MHz ISM-band transmitters (e.g., telemetry, sensor networks). IC Role / Device Role / Timing Role: Final-stage amplifier optimized for constant-envelope FM/FSK modulation at 3.6V. Use Value: Delivers 1W output with 58% efficiency and -42dBc harmonics - meets FCC Part 15 spectral limits without added filtering. |
Use Scenario: Compact, low-voltage PA in handheld two-way pagers operating from three NiMH cells (3.6V nominal). IC Role / Device Role / Timing Role: Discrete RF power transistor eliminating need for GaAsFET sequencing and negative bias rails. Use Value: Reduces bill-of-materials count by integrating bias diode and enabling direct 3.6V operation - lowers system cost and size. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX2601ESA+T | No integrated BIAS diode; requires external bias network for thermal stability | Suitable where board space permits discrete bias components and tighter cost control is needed | Select MAX2601ESA+T when thermal drift tolerance > ±15% IC is acceptable and layout allows external bias resistor/inductor |
| RFM3702 | SiGe HBT process; higher fT (5GHz); no integrated bias diode; 6-pin SOT-89 package | Better suited for wideband or higher-frequency (>1.5GHz) designs; less thermal robustness at 900MHz high-power operation | Choose RFM3702 only if operating above 1GHz or requiring higher gain-bandwidth product - not drop-in compatible with MAX2602ESA+T |
Compared with MAX2601ESA+T and RFM3702, the MAX2602ESA+T uniquely integrates a thermally matched biasing diode in an 8-pin SOIC, delivering superior temperature stability for 900MHz GSM/NPCS applications without increasing PCB area or component count.
Availability
MAX2602ESA+T is available at Aetrix Electronics and suitable for microcellular GSM handsets, narrow-band PCS transmitters, and 915MHz ISM equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for MAX2602ESA+T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in high-performance analog, mixed-signal, and RF solutions for industrial, communications, and consumer applications.
The MAX2602ESA+T belongs to Maxim's RF power transistor product line, engineered specifically for battery-efficient, thermally stable final-stage amplification in 800–900MHz portable wireless transmitters.
FAQ
What is the function of Pin 4 (BIAS) on the MAX2602ESA+T?
Pin 4 is the anode of an on-die biasing diode thermally and process-matched to the RF transistor. When connected via an RF choke to the base (Pin 4 or 5), it provides temperature-stable quiescent collector current - its current scales at 1/15 × IC. This eliminates external thermal compensation components in the MAX2602ESA+T design.
Does the MAX2602ESA+T require a negative supply or drain switch for turn-off?
No. The MAX2602ESA+T operates with a single positive supply (3.0V–4.8V) and turns off fully by removing base drive - no negative bias rail or external drain-switch MOSFET is needed. This simplifies power sequencing and improves battery runtime compared to GaAsFET alternatives.
What is the maximum allowable collector-emitter voltage for the MAX2602ESA+T?
The absolute maximum collector-emitter sustaining voltage (VCES) for the MAX2602ESA+T is 17V. This rating ensures safe operation with 4.8V supplies and transient voltage margins. Exceeding 17V risks permanent device damage, even momentarily.
How does the MAX2602ESA+T achieve thermal stability without external components?
The MAX2602ESA+T integrates a biasing diode fabricated alongside the RF transistor on the same die, ensuring identical thermal coefficient and process variation. Its 1/15 × IC current scaling enables automatic collector current compensation across -40°C to +85°C - a core capability confirmed in the MAX2602ESA+T datasheet Figure 2 and Detailed Description section.
Can the MAX2602ESA+T be used in 433MHz ISM-band applications?
Yes. The MAX2602ESA+T is characterized from DC to 1GHz and includes specific 433MHz performance data: two-tone output power, IM3/IM5, and input power sweep curves (Figures MAX2601-03 and MAX2601-04). Optimum impedances at 433MHz are ZS = 9.5 − j2.5Ω and ZL = 8.5 − j1.5Ω per the MAX2602ESA+T datasheet.
MAX2602ESA+T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 15V
- Frequency - Transition:
- 1GHz
- Noise Figure (dB Typ @ f):
- 3.3dB @ 836MHz
- Gain:
- 11.6dB
- Power - Max:
- 6.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 250mA, 3V
- Current - Collector (Ic) (Max):
- 1.2A
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC-EP
MAX2602ESA+T FAQ
1.How can I place an order for MAX2602ESA+T through Aetrix?
Please submit a Request for Quotation (RFQ) for MAX2602ESA+T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MAX2602ESA+T reliable?
The price and inventory of MAX2602ESA+T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MAX2602ESA+T is usually 5 days.
3.What payment methods are accepted for MAX2602ESA+T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MAX2602ESA+T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MAX2602ESA+T?
MAX2602ESA+T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MAX2602ESA+T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MAX2602ESA+T?
For technical support, including MAX2602ESA+T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MAX2602ESA+T requirements.
6.How does Aetrix verify that MAX2602ESA+T is sourced from the original manufacturer or authorized distributors?
All MAX2602ESA+T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MAX2602ESA+T meets industry standards.
7.What is the process for return or replacement of MAX2602ESA+T?
All MAX2602ESA+T units undergo pre-shipment inspection (PSI). If there is an issue with MAX2602ESA+T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MAX2602ESA+T part is unused and in its original packaging.
Return procedure for MAX2602ESA+T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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