Diodes Incorporated MMBTH10-7

Overview

MMBTH10 from Diodes Incorporated is a 25V NPN VHF/UHF transistor in SOT23 package, rated for 50mA continuous collector current, 350mW power dissipation, and 650MHz current gain–bandwidth product (f_T). It serves as a high-frequency amplifying device in RF front-ends and oscillator stages where low capacitance (C_IBO = 0.7pF) and fast switching are required.

For engineers reviewing the MMBTH10 datasheet, MMBTH10 pinout, MMBTH10 application, or MMBTH10 equivalent, key selection criteria include V_CEO = 25V, f_T = 650MHz, V_CE(sat) ≤ 0.5V at I_C = 4mA/I_B = 400µA, C_IBO = 0.7pF, and SOT23 thermal resistance R_θJA = 357°C/W on 15mm × 15mm copper.

Technical Context

This NPN RF transistor operates in the VHF/UHF band with verified f_T = 650MHz at V_CE = 10V, I_C = 4mA, enabling stable small-signal amplification up to ~500MHz. Its low base-collector capacitance (C_IBO = 0.7pF at V_CB = 10V) and short collector-base time constant (R_b'C_c = 9ps) support minimal phase distortion in tuned amplifier and oscillator circuits.

The device features BV_CEO ≥ 25V and BV_CBO ≥ 30V, allowing operation in bias-stable common-emitter configurations with up to 25V collector supply. Saturation voltage remains ≤ 0.5V under I_C/I_B = 10, supporting efficient switching in low-duty-cycle RF driver stages.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3-pin configuration, 0.008g mass, UL 94V-0 flammability rating, and matte tin-plated leads solderable per MIL-STD-202 Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN VHF/UHF transistor applications.

Compared with MMBT2222A and 2SC3356, the MMBTH10 uniquely balances 650MHz f_T, 25V V_CEO, and sub-1pF capacitance-making it optimal for cost-sensitive, thermally constrained VHF/UHF amplifiers requiring stable gain and low phase noise.

Availability

MMBTH10 is available at Aetrix Electronics and suitable for VHF/UHF amplifiers, high-output oscillators, RF driver stages, and low-power transmitter outputs requiring stable component supply across industrial, communications, and consumer electronics programs.

Supply support for MMBTH10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, industry-qualified components for power management, signal integrity, and RF applications.

The MMBTH10 belongs to Diodes' RF transistor product line, engineered specifically for VHF/UHF amplification and oscillation tasks where low capacitance, high f_T, and robust voltage ratings are essential in compact SOT23 form factor.

FAQ

What is the maximum operating frequency for small-signal amplification using MMBTH10?

The MMBTH10 has a current gain–bandwidth product (f_T) of 650MHz, meaning it maintains usable small-signal gain up to approximately 500MHz in well-designed common-emitter amplifiers. Performance beyond this depends on layout parasitics, bias stability, and load matching-verified in Diodes' typical application curves up to 600MHz.

Is MMBTH10 suitable for automotive applications?

The standard MMBTH10 is not AEC-Q200 qualified. However, Diodes offers the MMBTH10Q variant-a functionally identical part tested and certified for automotive use per AEC-Q200 Rev D. For automotive designs, MMBTH10Q must be specified; the base MMBTH10 is intended for industrial and commercial applications only.

How does the SOT23 package affect thermal performance in continuous RF operation?

In continuous operation on a 15mm × 15mm 1oz copper pad, the MMBTH10 achieves R_θJA = 357°C/W. At 350mW dissipation, junction temperature rise is ~125°C above ambient-requiring derating above +50°C ambient or limiting duty cycle in pulsed RF applications to maintain reliability.

Can MMBTH10 replace MMBT2222A in existing VHF amplifier designs?

Direct replacement is possible only if the circuit operates below 200MHz and does not rely on the MMBT2222A's higher V_CEO (40V). The MMBTH10's superior f_T and lower C_IBO improve high-frequency gain and oscillator phase noise-but its lower V_CEO (25V) may require supply voltage reduction or redesign of bias networks.