Diodes Incorporated MMBTH10-7-F

Overview

MMBTH10-7-F from Diodes Incorporated is a 25V NPN VHF/UHF transistor in SOT23 package, rated for 50mA continuous collector current, 350mW power dissipation, and 650MHz current gain-bandwidth product (f_T). It serves as a high-frequency amplifying device in RF front-ends and oscillator stages where low saturation voltage (<500mV at I_C=4mA) and tight thermal resistance (R_θJA = 357°C/W on 15mm×15mm copper) are critical.

For engineers reviewing the MMBTH10-7-F datasheet, MMBTH10-7-F pinout, MMBTH10-7-F application, or MMBTH10-7-F equivalent, key selection criteria include its V_CEO = 25V rating, f_T = 650MHz performance, C_IBO = 0.7pF input capacitance, SOT23 footprint compatibility, and suitability for VHF/UHF small-signal amplification with minimal thermal derating.

Technical Context

The MMBTH10-7-F is a silicon NPN RF transistor optimized for operation up to UHF frequencies, featuring a current gain-bandwidth product of 650MHz under V_CE = 10V, I_C = 4mA conditions. Its low base-collector capacitance (C_OBO = 0.65pF) and collector-base time constant (R_b'C_c = 9ps) support stable high-frequency amplification with minimal phase shift.

It operates within –65°C to +150°C junction temperature range and exhibits BV_CEO ≥ 25V and BVC_BO ≥ 30V breakdown ratings. The device uses a planar epitaxial structure with matte tin-plated leads and meets J-STD-020 Level 1 moisture sensitivity requirements.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3 terminals, 0.008g mass, UL 94V-0 flammability rating, and JEDEC-compliant outline (A=0.40mm, B=1.30mm, C=2.40mm, D=0.915mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with MMBT2222ALT1G and PN2222A, the MMBTH10-7-F delivers superior UHF gain-bandwidth and tighter capacitance control in a miniature, environmentally compliant package-making it optimal for space-constrained, high-frequency RF signal chains where thermal and spectral purity are critical.

Availability

MMBTH10-7-F is available at Aetrix Electronics and suitable for VHF/UHF amplifiers, high-output VHF oscillators, and RF amplifiers requiring stable component supply, consistent parametric performance across production lots, and full RoHS/Green compliance.

Supply support for MMBTH10-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The MMBTH10 belongs to Diodes' RF transistor product line, engineered specifically for high-frequency amplification and oscillation in commercial wireless infrastructure, test equipment, and consumer RF modules operating below 500MHz.

FAQ

What is the maximum operating frequency for reliable small-signal amplification with the MMBTH10-7-F?

The MMBTH10-7-F achieves a current gain-bandwidth product (f_T) of 650MHz under standard test conditions (V_CE = 10V, I_C = 4mA). For stable small-signal amplification with ≥10dB gain, practical operation extends reliably to 300–400MHz depending on bias point, layout parasitics, and matching network losses.

Does the MMBTH10-7-F require external neutralization for stability in common-emitter amplifier configurations?

Neutralization is not required for typical narrowband VHF designs due to its low collector-base feedback capacitance (C_OBO = 0.65pF) and short base-collector time constant (9ps). However, broadband or UHF (>450MHz) common-emitter layouts may benefit from emitter degeneration or resistive base termination to suppress potential oscillations.

Can the MMBTH10-7-F be used in switching applications despite being specified as an RF transistor?

Yes-the MMBTH10-7-F supports switching use cases with t_on/t_off in the nanosecond range due to its low saturation voltage (≤0.5V) and fast charge storage characteristics. It is validated for pulsed operation (duty cycle ≤2%, pulse width ≤300µs), making it suitable for RF switch drivers and modulator stages up to 100MHz.

How does the thermal performance of the MMBTH10-7-F compare between minimum pad layout and enhanced copper area?

On a minimum FR-4 pad layout, R_θJA is 403°C/W; on a 15mm×15mm 1oz copper area, it improves to 357°C/W-a 11% reduction. This translates to ~16°C lower junction temperature at 350mW dissipation, directly extending reliability and enabling higher ambient operating temperatures in sealed enclosures.