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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Diodes Incorporated MMBTH10Q-7-F

Name: MMBTH10Q-7-F
Brand: Diodes Incorporated
SKU: MMBTH10Q-7-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBTH10Q-7-F

Manufacturer:: Diodes Incorporated

Category:: Bipolar RF Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBTH10Q-7-F.pdf

Description:: RF TRANSISTOR SOT23

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBTH10Q from Diodes Incorporated is a 25V NPN VHF/UHF transistor in SOT23 package, rated for 50mA continuous collector current, 350mW power dissipation, and 650MHz f_T, used in RF amplifiers and high-output VHF oscillators for automotive and wireless infrastructure.

For engineers reviewing the MMBTH10Q datasheet, MMBTH10Q pinout, MMBTH10Q application, or MMBTH10Q equivalent, key selection criteria include V_CEO = 25V, h_FE ≥ 60 at I_C = 4mA, V_CE(sat) ≤ 0.5V, f_T = 650MHz, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This NPN RF transistor operates with low saturation voltage (≤0.5V at I_C = 4mA, I_B = 400µA) and high gain-bandwidth product (650MHz), enabling stable amplification in VHF/UHF bands up to 300MHz. Its 30V V_CBO and 3V V_EBO support robust biasing in tuned amplifier stages.

The device features low parasitic capacitance (C_CB = 0.7pF, C_RB = 0.65pF at V_CB = 10V), minimizing Miller effect in high-frequency common-emitter configurations, and exhibits thermal resistance R_θJA = 357°C/W on 15mm × 15mm copper, supporting sustained RF output in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	25 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions
I_C (max)	50 mA - Continuous DC collector current handling capacity without thermal derating
f_T	650 MHz - Unity-gain frequency defining usable small-signal amplification bandwidth
V_CE(sat)	≤ 0.5 V - Low saturation voltage ensures minimal power loss in switching or Class-C oscillator applications
h_FE	≥ 60 - DC current gain at I_C = 4mA, V_CE = 10V, sufficient for low-drive RF stage biasing
P_D	350 mW - Maximum steady-state power dissipation on standard 15mm × 15mm PCB copper area
C_CB	0.7 pF - Collector-base junction capacitance limiting high-frequency feedback and stability margin

Pinout & Package

Package: SOT23 - Surface-mount plastic package with 3 terminals, 0.008g mass, UL 94V-0 rating, moisture sensitivity level 1, and matte tin-plated leads solderable per MIL-STD-202.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Low-impedance return path for collector current; connected to ground or bias network in common-base/common-emitter RF stages
2 (Base)	Control input	Receives drive signal to modulate collector current; requires ~400µA base current for full saturation at 4mA collector load
3 (Collector)	Current source terminal	Delivers amplified RF output; connects to tuned tank circuit or 50Ω load via matching network in VHF/UHF amplifiers

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control modules and infotainment RF subsystems
V_CEO > 25V	Margin above 24V system rails enables reliable operation in automotive transients and noise environments
f_T = 650MHz	Supports amplification up to UHF band (300–900MHz) with adequate gain margin for impedance-matched designs
SOT23 footprint	Enables high-density RF layout with minimal parasitic inductance and trace length in compact wireless modules
Green, halogen-free	Complies with automotive OEM environmental requirements (Br+Cl < 1500ppm, Sb < 1000ppm)

Applications

VHF Amplifier Stage

UHF Oscillator Core

Use Scenario: Boosting weak 100–300MHz signals in FM receiver front-ends or two-way radio IF strips.

IC Role / Device Role / Timing Role: NPN RF amplifier in common-emitter configuration with tuned collector load.

Use Value: 650MHz f_T and low C_CB ensure stable gain and minimal phase distortion across VHF band.

Use Scenario: Generating stable local oscillator signals in 400–900MHz ISM-band transceivers.

IC Role / Device Role / Timing Role: Active element in Colpitts or Clapp oscillator topology.

Use Value: Low V_CE(sat) and high h_FE enable efficient start-up and low-phase-noise sustained oscillation.

Automotive Radar Sensor Bias

Wireless Remote Control Transmitter

Use Scenario: Biasing low-power 24GHz radar LNA driver stages in ADAS proximity sensors.

IC Role / Device Role / Timing Role: High-linearity pre-driver for GaAs or SiGe RF ICs.

Use Value: AEC-Q101 qualification and -65°C to +150°C operating range ensure functional safety compliance.

Use Scenario: Transmitting ASK/OOK-modulated 315/433MHz signals in keyless entry and garage door systems.

IC Role / Device Role / Timing Role: Final-stage RF switch/amplifier driving PCB trace antenna.

Use Value: 50mA I_C and 350mW P_D support burst-mode output power up to +10dBm with minimal thermal drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT2222A-7-F	V_CEO = 40V, f_T = 300MHz, h_FE = 100–300 - higher voltage rating but lower bandwidth	Better suited for general-purpose switching and audio amplification, not optimized for UHF	Select when higher V_CEO margin is critical and f_T > 500MHz is not required
BC847BW,115	V_CEO = 45V, f_T = 100MHz, h_FE = 200–450 - wider gain spread, lower f_T, non-AEC-Q101	Targeted at consumer-grade signal conditioning, not automotive or RF-critical use	Choose for cost-sensitive industrial controls where AEC-Q101 and UHF performance are unnecessary

Compared with MMBT2222A-7-F and BC847BW,115, the MMBTH10Q delivers superior UHF gain-bandwidth and automotive qualification-making it the only choice for AEC-Q101-compliant VHF/UHF oscillator and amplifier designs requiring f_T ≥ 650MHz and thermal stability to +150°C.

Availability

MMBTH10Q is available at Aetrix Electronics and suitable for VHF/UHF amplifiers, automotive radar sensor biasing, high-output oscillators, and wireless remote control transmitters requiring stable component supply across production lifecycles.

Supply support for MMBTH10Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The MMBTH10Q belongs to Diodes' high-frequency transistor product line, engineered specifically for automotive-qualified RF signal generation and amplification in VHF/UHF bands up to 900MHz.

FAQ

Is MMBTH10Q suitable for 868MHz ISM-band transmitter stages?

Yes. With f_T = 650MHz and low C_CB = 0.7pF, the MMBTH10Q supports fundamental-mode amplification up to ~300MHz and harmonic-based operation into the 868MHz band when used in Class-C or tuned amplifier configurations. Its AEC-Q101 qualification further validates robustness in demanding RF environments.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies 350mW power dissipation when mounted on a 15mm × 15mm single-sided 1oz copper pad. Using this layout achieves R_θJA = 357°C/W. Smaller pads increase thermal resistance significantly-e.g., minimum recommended FR-4 layout yields R_θJA = 403°C/W and limits safe continuous power to ~310mW.

Does MMBTH10Q support pulsed RF operation beyond its DC ratings?

Yes. Electrical characteristics are measured under pulsed conditions (pulse width ≤ 300µs, duty cycle ≤ 2%), allowing short-duration peak currents exceeding 50mA and transient power bursts above 350mW-provided average power remains within thermal limits and pulse timing avoids junction temperature overshoot.

How does the K3Y marking relate to the MMBTH10Q-7-F orderable part?

K3Y is the top-side product type and date code marking on the SOT23 package: "K3" identifies the MMBTH10Q die, and "Y" denotes year code (e.g., Y = 2026 per Diodes' date code table). The "-7-F" suffix indicates 7-inch reel, 8mm tape width, and RoHS-compliant finish-matching the packaging specification in the ordering table.

MMBTH10Q-7-F Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 25V

Frequency - Transition:: 650MHz

Noise Figure (dB Typ @ f):: -

Gain:: -

Power - Max:: 310mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 4mA, 10V

Current - Collector (Ic) (Max):: 50mA

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBTH10Q-7-F FAQ

1.How can I place an order for MMBTH10Q-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBTH10Q-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBTH10Q-7-F reliable?

The price and inventory of MMBTH10Q-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBTH10Q-7-F is usually 5 days.

3.What payment methods are accepted for MMBTH10Q-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBTH10Q-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBTH10Q-7-F?

MMBTH10Q-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBTH10Q-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBTH10Q-7-F?

For technical support, including MMBTH10Q-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBTH10Q-7-F requirements.

6.How does Aetrix verify that MMBTH10Q-7-F is sourced from the original manufacturer or authorized distributors?

All MMBTH10Q-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBTH10Q-7-F meets industry standards.

7.What is the process for return or replacement of MMBTH10Q-7-F?

All MMBTH10Q-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMBTH10Q-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBTH10Q-7-F part is unused and in its original packaging.

Return procedure for MMBTH10Q-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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