Diodes Incorporated MMBTH24-7-F

Overview

MMBTH24-7-F from Diodes Incorporated is an NPN silicon RF transistor in SOT-23 package, rated for VCEO/V_CBO = 40 V, I_C = 50 mA, P_D = 300 mW, and f_T = 400 MHz. It serves as a high-frequency amplifier or oscillator device in VHF/UHF signal chains, supporting collector currents from 100 µA to 30 mA.

For engineers reviewing the MMBTH24-7-F datasheet, MMBTH24-7-F pinout, MMBTH24-7-F application, or MMBTH24-7-F equivalent, this part is selected for low-noise RF gain stages, mixer cells, and compact oscillator designs where bandwidth, gain-bandwidth product, and SOT-23 thermal performance are critical.

Technical Context

This NPN RF transistor uses epitaxial planar construction optimized for VHF/UHF operation up to 300 MHz. Its f_T of 400 MHz at V_CE = 10 V and I_C = 8 mA enables stable small-signal amplification with h_FE ≥ 30 (I_C = 8 mA, V_CE = 10 V) and low C_CB = 0.7 pF (V_CB = 10 V).

The device operates across –55°C to +150°C with R_θJA = 417°C/W on standard FR-4 layout, and features RoHS-compliant green molding compound (post-2008 date codes). Its V_BE(SAT) ≤ 0.95 V and V_CE(SAT) ≤ 0.5 V support efficient biasing in Class-A or AB RF stages.

Key Specifications

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; moisture sensitivity level 1 per J-STD-020C; RoHS-compliant matte tin plating over Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with MMBT2222A-7-F and PN2222A, the MMBTH24-7-F offers superior VHF/UHF bandwidth and SOT-23 thermal performance, making it optimal for space-constrained, high-frequency designs where gain-bandwidth trade-offs favor speed over DC gain.

Availability

MMBTH24-7-F is available at Aetrix Electronics and suitable for FM transmitter front-ends, VHF oscillator cores, and RF mixer cells requiring stable component supply despite its obsolete status.

Supply support for MMBTH24-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, cost-effective solutions for power management, signal integrity, and protection.

The MMBTH24 belongs to Diodes' legacy RF transistor product line, designed specifically for VHF/UHF amplifier and oscillator applications in consumer, industrial, and communications equipment.

FAQ

Is MMBTH24-7-F still in production?

No - Diodes Incorporated has officially discontinued the MMBTH24-7-F, marking it "OBSOLETE" in DS31034 Rev. 14. However, Aetrix Electronics maintains legacy inventory with full traceability and provides lifecycle coordination support for ongoing production programs.

What is the maximum recommended operating frequency for MMBTH24-7-F?

The device is characterized up to 300 MHz in typical amplifier applications, supported by its 400 MHz f_T and low C_CB (0.7 pF). Performance beyond 300 MHz depends on layout, bias, and matching network design - measured gain rolls off above 350 MHz in standard test fixtures.

Can MMBTH24-7-F replace MMBT2222A in RF circuits?

Only with circuit validation: MMBTH24-7-F has higher f_T but lower h_FE (min 30 vs. 100), different C_CB, and tighter V_BE(SAT) tolerance. It may improve bandwidth but require bias network recalibration - not a drop-in replacement.

Does MMBTH24-7-F meet lead-free soldering requirements?

Yes - it features matte tin plating over Alloy 42 leadframe and complies with JEDEC J-STD-020C Level 1 moisture sensitivity. The device supports standard Pb-free reflow profiles (peak 260°C) without delamination or solder joint reliability issues.