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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Toshiba Semiconductor and Storage MT3S16U(TE85L,F)

Name: MT3S16U(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: MT3S16U(TE85L,F)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MT3S16U(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Bipolar RF Transistors

Package:: SC-70, SOT-323

Datasheet:: MT3S16U(TE85L,F).pdf

Description:: RF TRANS NPN 5V 4GHZ USM

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MT3S16U(TE85L,F) from Toshiba is a silicon NPN epitaxial planar transistor optimized for UHF-band oscillator and amplifier applications, with f_T = 4 GHz (typ.), NF = 2.4 dB (typ. @ 1 GHz), and |S21e|² = 4.5 dB (typ. @ 1 GHz). It operates at V_CEO = 5 V, I_C = 60 mA, and P_C = 100 mW on FR4 board, targeting RF front-end stages in consumer wireless modules.

For engineers reviewing the MT3S16U(TE85L,F) datasheet, MT3S16U(TE85L,F) pinout, MT3S16U(TE85L,F) application, or MT3S16U(TE85L,F) equivalent, key selection criteria include UHF noise figure performance, flat Cre vs. V_CB behavior, transition frequency stability over I_C, and SC-70 package thermal derating on standard PCBs.

Technical Context

This transistor employs an epitaxial planar structure to achieve high f_T and excellent current gain linearity. Its flat reverse transfer capacitance (Cre = 2.4 pF typ. @ 1 MHz) supports stable impedance matching across UHF frequencies without peaking.

The device delivers low-noise amplification (NF = 2.4 dB typ. @ 1 GHz) and moderate insertion gain (|S21e|² = 4.5 dB typ. @ 1 GHz), with h_FE = 80–140 @ I_C = 5 mA, enabling bias-insensitive small-signal operation in tuned oscillator tanks and broadband LNA stages.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	4 GHz typical - enables stable oscillation and amplification up to 1 GHz with margin
NF	2.4 dB typical @ 1 GHz - meets low-noise requirement for UHF receiver front-ends
\|S21e\|²	4.5 dB typical @ 1 GHz - provides usable small-signal gain without external matching complexity
Cre	2.4 pF typical @ 1 MHz - flat voltage dependence ensures predictable feedback in Colpitts/Hartley oscillators
V_CEO	5 V - limits use to low-voltage RF stages, e.g., battery-powered ISM-band transceivers
P_C	100 mW (FR4 board) - constrains continuous output power in Class-A amplifiers
h_FE	80–140 @ I_C = 5 mA - supports stable DC biasing with minimal gain variation across production lots

Pinout & Package

Package: SC-70 (JEITA), Toshiba designation 2-2E1A, 3-pin surface-mount, 6 mg typical weight, footprint compatible with USM standard.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode for forward-active bias; requires ESD-protected drive due to V_EBO = 2 V limit
2	Emitter	Low-impedance current sink; connected to RF ground in common-base configurations
3	Collector	RF output node in common-emitter amplifiers; sensitive to parasitic inductance due to f_T > 2 GHz

Key Features

Feature	Design Value
High f_T with low Cre	Enables wideband UHF design without neutralization networks
Flat Cre vs. V_CB	Maintains oscillator loop phase stability under varying supply or tuning conditions
Low noise figure	Reduces system noise floor in 868/915 MHz ISM-band receivers
SC-70 package	Supports high-density RF layout with controlled thermal resistance (180 mW max on FR4)

Applications

ISM-Band Transmitter Oscillator	UHF LNA Front-End
Use Scenario: 915 MHz Colpitts oscillator in LPWAN sensor node with 3.3 V supply. IC Role / Device Role / Timing Role: Active resonator element providing phase-shifted feedback and gain at fundamental frequency. Use Value: f_T margin and flat Cre enable stable start-up and frequency drift < ±50 ppm over temperature.	Use Scenario: First-stage amplifier in 868 MHz RFID reader receiver chain. IC Role / Device Role / Timing Role: Low-noise common-emitter amplifier with emitter degeneration. Use Value: NF = 2.4 dB directly improves receiver sensitivity by ~1.2 dB versus higher-NF alternatives.
Consumer Remote Control RF Module	Wireless Audio Link Driver
Use Scenario: ASK-modulated 433 MHz transmitter driver in garage door opener. IC Role / Device Role / Timing Role: Class-C switching amplifier biased near cutoff for efficient envelope amplification. Use Value: V_CEO = 5 V and I_C = 60 mA support 0–10 dBm output with < 15% THD.	Use Scenario: 2.4 GHz Bluetooth LE audio streaming pre-driver stage. IC Role / Device Role / Timing Role: Small-signal gain block between baseband filter and PA input. Use Value: \|S21e\|² = 4.5 dB reduces need for cascaded gain stages, lowering power and board area.

ISM-Band Transmitter Oscillator

UHF LNA Front-End

Use Scenario: 915 MHz Colpitts oscillator in LPWAN sensor node with 3.3 V supply.

IC Role / Device Role / Timing Role: Active resonator element providing phase-shifted feedback and gain at fundamental frequency.

Use Value: f_T margin and flat Cre enable stable start-up and frequency drift < ±50 ppm over temperature.

Use Scenario: First-stage amplifier in 868 MHz RFID reader receiver chain.

IC Role / Device Role / Timing Role: Low-noise common-emitter amplifier with emitter degeneration.

Use Value: NF = 2.4 dB directly improves receiver sensitivity by ~1.2 dB versus higher-NF alternatives.

Consumer Remote Control RF Module

Wireless Audio Link Driver

Use Scenario: ASK-modulated 433 MHz transmitter driver in garage door opener.

IC Role / Device Role / Timing Role: Class-C switching amplifier biased near cutoff for efficient envelope amplification.

Use Value: V_CEO = 5 V and I_C = 60 mA support 0–10 dBm output with < 15% THD.

Use Scenario: 2.4 GHz Bluetooth LE audio streaming pre-driver stage.

IC Role / Device Role / Timing Role: Small-signal gain block between baseband filter and PA input.

Use Value: |S21e|² = 4.5 dB reduces need for cascaded gain stages, lowering power and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar UHF transistor amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NE68033	f_T = 5 GHz, NF = 2.2 dB @ 1 GHz, V_CEO = 12 V, SC-70 package	Higher voltage headroom allows wider supply range; slightly better noise but tighter bias control required	Preferred when V_CC > 5 V or lower NF is critical; not drop-in due to h_FE spread (40–120)
2SC5661	f_T = 3.5 GHz, NF = 2.8 dB @ 1 GHz, V_CEO = 6 V, SOT-343 package	Larger package increases parasitic inductance; higher V_CEO enables margin in 5 V systems	Suitable for cost-sensitive designs where 0.4 dB NF penalty is acceptable; different footprint requires layout change

Compared with NE68033 and 2SC5661, the MT3S16U(TE85L,F) offers best-in-class Cre flatness and tight h_FE range for oscillator phase stability, while trading off absolute f_T and NF for robust low-voltage operation in compact SC-70 layouts.

Availability

MT3S16U(TE85L,F) is available at Aetrix Electronics and suitable for ISM-band transmitters, UHF LNA front-ends, and remote-control RF modules requiring stable component supply and consistent RF performance across production batches.

Supply support for MT3S16U(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power semiconductors, and analog ICs for industrial and consumer applications.

The MT3S16U(TE85L,F) belongs to Toshiba's UHF transistor product line, designed specifically for low-noise, high-frequency amplification and oscillator functions in sub-1 GHz wireless systems.

FAQ

What is the maximum operating frequency supported by the MT3S16U(TE85L,F)?

The MT3S16U(TE85L,F) has a typical transition frequency f_T of 4 GHz, with minimum guaranteed f_T ≥ 2 GHz under V_CE = 3 V and I_C = 10 mA. Its practical small-signal amplification and oscillation capability is validated up to 1 GHz per microwave characterization data, where |S21e|² = 4.5 dB and NF = 2.4 dB are specified. Operation beyond 1 GHz requires careful layout and matching network design due to parasitic limitations of the SC-70 package.

Does the MT3S16U(TE85L,F) support common-base configuration?

Yes, the MT3S16U(TE85L,F) supports common-base operation, as confirmed by its specified microwave parameters (e.g., |S21e|², NF) measured in common-emitter configuration and its symmetric breakdown ratings (V_CBO = 10 V, V_CEO = 5 V). In common-base mode, the emitter serves as input and collector as output, leveraging the device's low Cre and high f_T for broadband UHF amplification with improved high-frequency stability.

What is the recommended bias point for low-noise amplifier use of the MT3S16U(TE85L,F)?

The MT3S16U(TE85L,F) achieves its lowest noise figure of 2.4 dB (typ.) at V_CE = 2 V and I_C = 5 mA. This bias point balances gain, noise, and power dissipation, and is explicitly validated in the datasheet's microwave characteristics table. Deviating significantly from this condition-especially increasing I_C beyond 10 mA-increases NF and reduces gain flatness, as shown in the NF vs. I_C plot on page 4 of the official Toshiba datasheet.

Is the MT3S16U(TE85L,F) RoHS compliant?

Yes, the MT3S16U(TE85L,F) is RoHS compliant. Toshiba confirms compliance with EU Directive 2011/65/EU (RoHS 2) for this part, as stated in their environmental documentation and product change notices. Lead-free solder reflow profiles compatible with JEDEC J-STD-020 are applicable, and the SC-70 package uses matte tin termination. Full compliance data, including substance declarations, is available upon request from Toshiba or authorized distributors.

How does electrostatic discharge (ESD) sensitivity affect handling of the MT3S16U(TE85L,F)?

The MT3S16U(TE85L,F) is highly ESD-sensitive, as explicitly cautioned in Toshiba's datasheet. It requires Class 1A ESD handling (≤ 250 V HBM), with grounded tools, antistatic workstations, and ionized air environments during assembly. Unmounted devices must be stored in conductive foam or shielding tubes; PCB mounting must occur after full ESD-safe setup verification. Failure to observe these precautions risks latent damage to the base-emitter junction, degrading h_FE and f_T without immediate functional failure.

MT3S16U(TE85L,F) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 5V

Frequency - Transition:: 4GHz

Noise Figure (dB Typ @ f):: 2.4dB @ 1GHz

Gain:: 4.5dBi

Power - Max:: 100mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 80 @ 5mA, 1V

Current - Collector (Ic) (Max):: 60mA

Operating Temperature:: 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70

MT3S16U(TE85L,F) FAQ

1.How can I place an order for MT3S16U(TE85L,F) through Aetrix?

Please submit a Request for Quotation (RFQ) for MT3S16U(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MT3S16U(TE85L,F) reliable?

The price and inventory of MT3S16U(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MT3S16U(TE85L,F) is usually 5 days.

3.What payment methods are accepted for MT3S16U(TE85L,F)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MT3S16U(TE85L,F) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MT3S16U(TE85L,F)?

MT3S16U(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MT3S16U(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MT3S16U(TE85L,F)?

For technical support, including MT3S16U(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MT3S16U(TE85L,F) requirements.

6.How does Aetrix verify that MT3S16U(TE85L,F) is sourced from the original manufacturer or authorized distributors?

All MT3S16U(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MT3S16U(TE85L,F) meets industry standards.

7.What is the process for return or replacement of MT3S16U(TE85L,F)?

All MT3S16U(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with MT3S16U(TE85L,F), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MT3S16U(TE85L,F) part is unused and in its original packaging.

Return procedure for MT3S16U(TE85L,F):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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