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Nexperia USA Inc. NHUMB10X
- Part No.:
- NHUMB10X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NHUMB10X.pdf
- Description:
- TRANS PREBIAS 2PNP 80V 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:18,000
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Product details
Overview
NHUMB10 from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT363 (SC-88) package, designed for digital switching and IC input control. It features 80 V collector-emitter breakdown voltage (VCEO), −100 mA output current capability per transistor, built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), and AEC-Q101 qualification for automotive use.
For engineers reviewing the NHUMB10 datasheet, NHUMB10 pinout, NHUMB10 application, or NHUMB10 equivalent, this device serves as a space- and cost-optimized replacement for discrete BC856-based driver stages in logic-level interface circuits, load switching, and automotive body electronics where dual-PNP functionality with integrated base resistors is required.
Technical Context
This dual PNP RET integrates two matched PNP transistors with dedicated on-chip base bias networks-R1 (input resistor) and R2 (feedback resistor)-enabling direct TTL/CMOS-compatible drive without external components. Each transistor operates independently with open-base VCEO = −80 V and IO = −100 mA rating.
The internal resistor ratio R2/R1 = 21 provides stable current gain control and predictable VI(on)/VI(off) thresholds (−0.81 V typ / −500 mV typ at IC = −10 mA), supporting reliable saturation and cutoff across −40 °C to +150 °C ambient range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −80 V - Ensures robust operation in 24 V automotive and industrial supply rails with margin against transients. |
| IO | −100 mA - Supports driving moderate loads such as LEDs, relays, or logic inputs without external amplification. |
| R1 | 2.2 kΩ - Sets base current for TR1; enables direct connection to 3.3 V/5 V logic outputs with ~1.6 mA input sink. |
| R2 | 47 kΩ - Provides emitter feedback for improved DC stability and reduced sensitivity to hFE variation. |
| VCE(sat) | −100 mV max at IC = −10 mA, IB = −0.5 mA - Minimizes conduction loss in saturated switching applications. |
| Ptot (per device) | 350 mW - Allows dual-transistor operation within thermal limits on standard FR4 PCBs with single-sided copper. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive discrete semiconductors, enabling use in body control modules and lighting systems. |
Pinout & Package
SOT363 (SC-88) is a 6-pin, surface-mount plastic package measuring 2.2 × 1.35 × 1.1 mm with gull-wing leads and pin 1 index marking. Its compact footprint supports high-density PCB layouts in space-constrained automotive and portable electronics.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 (emitter of TR1) | Common emitter reference for first transistor; connects directly to system ground or low-side return path. |
| 2 | I1 (base input of TR1) | Logic-level input node; sinks current through R1 to activate TR1 when driven low. |
| 3 | O2 (collector of TR2) | Active-high output node for second transistor; sources current when TR2 is on (emitter grounded at Pin 4). |
| 4 | GND2 (emitter of TR2) | Independent emitter reference for second transistor; allows separate grounding or level-shifting configurations. |
| 5 | I2 (base input of TR2) | Second logic-level input; electrically isolated from I1, enabling independent control of both transistors. |
| 6 | O1 (collector of TR1) | Active-high output node for first transistor; functions as complementary switch to O2 in push-pull or dual-load topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP RET architecture | Integrates two functionally independent PNP transistors with matched characteristics and on-die biasing in one SC-88 package. |
| Automotive-grade reliability | AEC-Q101 qualification ensures performance under temperature cycling, humidity, and mechanical stress typical of automotive ECUs. |
| Reduced BOM count | Eliminates need for four external base resistors in dual-transistor switching circuits, cutting component count and placement cost. |
| Logic-compatible input thresholds | VI(on) = −0.81 V typ and VI(off) = −500 mV typ enable direct interfacing with 3.3 V and 5 V microcontrollers without level shifters. |
| Thermal derating support | Per-device Rth(j-a) = 358 K/W on FR4 allows sustained 100 mA operation up to +85 °C ambient with standard layout. |
Applications
| Automotive Body Control | Industrial Digital I/O |
|---|---|
|
Use Scenario: Driving door lock actuators and interior lighting loads in vehicle body control modules. IC Role / Device Role / Timing Role: Dual-PNP switch providing isolated, current-limited sourcing for 12 V/24 V resistive and inductive loads. Use Value: Eliminates discrete resistor networks while meeting AEC-Q101 requirements for vibration, temperature, and lifetime reliability. |
Use Scenario: Level-shifting and buffering between FPGA GPIOs and 5 V peripheral interfaces in PLC I/O cards. IC Role / Device Role / Timing Role: Logic-compatible input translator and load driver with fast turn-on (<100 ns propagation delay implied by fT = 150 MHz). Use Value: Reduces board area by 40% versus dual-SOT23 solution and simplifies layout with fixed resistor ratios. |
| Consumer Appliance Control | LED Driver Interface |
|
Use Scenario: Controlling relay coils and indicator LEDs in smart home appliances with MCU-based mainboards. IC Role / Device Role / Timing Role: Dual-channel active-low switch enabling simultaneous or independent actuation of two low-power loads. Use Value: Built-in R1/R2 network ensures consistent saturation across production lots, reducing calibration overhead. |
Use Scenario: Driving common-anode RGB LED segments from 3.3 V microcontroller outputs in portable devices. IC Role / Device Role / Timing Role: High-voltage PNP current sink with VCEO = −80 V, supporting LED strings up to 60 V forward drop. Use Value: Low VCE(sat) minimizes power loss and thermal rise in battery-powered designs with tight efficiency targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NHUMD10 | PNP/NPN complement; single PNP + single NPN pair with same R1/R2 values (2.2 kΩ/47 kΩ). | Required for push-pull or complementary switching topologies needing both polarities in one package. | Select when bidirectional drive or level inversion is needed; not interchangeable for dual-PNP-only circuits. |
| BC856B,BC857B dual | Discrete PNP pair without integrated resistors; requires four external 2.2 kΩ/47 kΩ resistors for equivalent biasing. | Higher BOM count and PCB area; suitable only where design flexibility or trimming is required. | Choose only if resistor values must be customized or if legacy discrete layout reuse is mandatory. |
Compared with NHUMD10, NHUMB10 delivers true dual-PNP functionality essential for sourcing-type loads and high-side switching, whereas BC856B dual increases assembly cost and layout complexity without improving performance in fixed-ratio applications.
Availability
NHUMB10 is available at Aetrix Electronics and suitable for automotive body control modules, industrial digital I/O cards, and consumer appliance control systems requiring stable component supply, AEC-Q101 compliance, and compact dual-transistor integration.
Supply support for NHUMB10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with leadership in automotive-qualified components.
The NHUMB10 belongs to Nexperia's resistor-equipped transistor (RET) product line, engineered specifically to replace discrete BJT+resistor combinations in cost-sensitive, space-constrained digital interface and load-switching applications.
FAQ
What is the maximum operating junction temperature for NHUMB10?
The absolute maximum junction temperature (Tj) is 150 °C, validated per IEC 60134 limiting values. Derating begins above 25 °C ambient, with total device power dissipation dropping linearly to zero at 150 °C junction temperature, based on Rth(j-a) = 358 K/W on FR4 PCB.
Can NHUMB10 drive inductive loads like relays directly?
Yes-NHUMB10 supports inductive loads up to 100 mA with VCEO = −80 V, but an external flyback diode must be placed across the relay coil to clamp inductive kickback, as the device lacks integrated protection diodes. Layout should minimize trace inductance to avoid voltage overshoot.
How does the built-in R2 resistor affect switching speed?
R2 (47 kΩ) provides emitter degeneration that stabilizes DC bias but slightly reduces small-signal bandwidth; measured fT remains 150 MHz, sufficient for digital switching below 10 MHz. For ultra-fast edge rates, external base resistors may be added in parallel to lower effective R2.
Is NHUMB10 pin-compatible with other SOT363 RETs like NHUMB13?
Yes-NHUMB10, NHUMB13, and NHUMB9 share identical SOT363 pinout and footprint, differing only in R1 values (2.2 kΩ, 4.7 kΩ, 10 kΩ). This allows drop-in substitution during design iteration or binning, provided input drive strength and VI(on)/VI(off) thresholds remain compatible with system logic levels.
NHUMB10X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 80V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 150MHz
- Power - Max:
- 350mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NHUMB10X FAQ
1.How can I place an order for NHUMB10X through Aetrix?
Please submit a Request for Quotation (RFQ) for NHUMB10X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NHUMB10X reliable?
The price and inventory of NHUMB10X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHUMB10X is usually 5 days.
3.What payment methods are accepted for NHUMB10X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHUMB10X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NHUMB10X?
NHUMB10X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NHUMB10X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NHUMB10X?
For technical support, including NHUMB10X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHUMB10X requirements.
6.How does Aetrix verify that NHUMB10X is sourced from the original manufacturer or authorized distributors?
All NHUMB10X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHUMB10X meets industry standards.
7.What is the process for return or replacement of NHUMB10X?
All NHUMB10X units undergo pre-shipment inspection (PSI). If there is an issue with NHUMB10X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NHUMB10X part is unused and in its original packaging.
Return procedure for NHUMB10X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NHUMB10X Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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