Nexperia USA Inc. NHUMB13X
- Part No.:
- NHUMB13X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NHUMB13X.pdf
- Description:
- TRANS PREBIAS 2PNP 80V 6TSSOP
- Quantity:
- Payment:

- Shipping:

Inventory:18,000
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Product details
Overview
NHUMB13X from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT363 (SC-88) package, rated for −80 V VCEO, −100 mA output current per transistor, with built-in bias resistors R1 = 4.7 kΩ and R2 = 47 kΩ. It functions as a dual high-voltage digital switch for level translation and IC input control in space-constrained automotive and industrial logic interfaces.
For engineers reviewing the NHUMB13X datasheet, NHUMB13X pinout, NHUMB13X application, or NHUMB13X equivalent, this device serves as an AEC-Q101-qualified drop-in alternative to discrete PNP pairs in load switching, bus interface buffering, and microcontroller GPIO expansion circuits where reduced BOM count and thermal efficiency are critical.
Technical Context
This dual PNP RET integrates two matched PNP transistors with dedicated base-emitter bias networks-R1 sets input threshold voltage (VI(on) = −1.4 V typ. at IC = −10 mA), while R2/R1 = 10 defines current gain stability under varying temperature (−40 °C to +150 °C junction). Each transistor operates independently with isolated emitters (GND1/GND2), enabling dual-channel sinking without shared emitter crosstalk.
The device uses epitaxial planar die construction with optimized doping profiles to achieve −80 V collector-base breakdown (VCBO) and low −100 mV VCE(sat) at IC/IB = 20, supporting reliable switching in 5 V–24 V logic-controlled loads. Thermal resistance from junction to ambient is 358 K/W per device on FR4 PCB, enabling sustained 100 mA operation within 150 °C Tj limit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −80 V - Enables direct interface with 24 V industrial buses without external clamping |
| IO | −100 mA per transistor - Supports driving LED arrays, relay coils, or logic inputs without external current amplification |
| R1 | 4.7 kΩ - Sets precise input current threshold (−1.2 mA typ.) for predictable turn-on across temperature |
| R2 | 47 kΩ - Provides stable base biasing to maintain hFE ≥ 100 at IC = −10 mA |
| VCE(sat) | −100 mV max at IC = −10 mA, IB = −0.5 mA - Minimizes power loss (≤1 mW per channel) in high-duty-cycle switching |
| Tj max | 150 °C - Qualified for under-hood automotive environments and sealed industrial enclosures |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive discrete semiconductors including HTGB, HTRB, and ESD |
Pinout & Package
SOT363 (SC-88) 6-pin surface-mount plastic package, 2.2 mm × 1.35 mm footprint, 0.95 mm height, JEDEC-compliant lead finish, designed for reflow and wave soldering per IPC-7095.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emitter of TR1 - Dedicated return path isolates TR1 current from TR2, preventing ground bounce coupling |
| 2 | I1 | Base input of TR1 - Connected internally to R1 and R2; accepts logic-level signals down to −1.4 V |
| 3 | O2 | Collector of TR2 - Active-low output node; sinks up to −100 mA when TR2 is saturated |
| 4 | GND2 | Emitter of TR2 - Independent reference for TR2; allows separate grounding in mixed-signal systems |
| 5 | I2 | Base input of TR2 - Electrically identical to I1; enables synchronous or independent dual-channel control |
| 6 | O1 | Collector of TR1 - Primary output for first channel; routed separately to avoid signal congestion on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP RET architecture | Two fully isolated PNP transistors with integrated R1/R2 bias network eliminate 4 external resistors per channel |
| High-voltage capability | −80 V VCEO rating supports direct connection to 24 V CAN/LIN bus power domains without level-shifting circuitry |
| Automotive qualification | AEC-Q101 qualification ensures reliability in engine control units, body electronics, and ADAS sensor interfaces |
| Thermal robustness | 358 K/W junction-to-ambient thermal resistance on standard FR4 enables 100 mA continuous operation at 85 °C ambient |
| Space-efficient packaging | SOT363 footprint (2.2 × 1.35 mm) reduces board area by >60% versus dual-SOT23 discrete solutions |
Applications
| Industrial PLC Input Module | Automotive Door Module |
|---|---|
|
Use Scenario: Isolating 24 V field sensor signals into 3.3 V microcontroller GPIOs with noise immunity. IC Role / Device Role / Timing Role: Dual-channel active-low level translator and current sink for dry-contact and NAMUR sensors. Use Value: Eliminates need for optocouplers or discrete resistor-transistor pairs, reducing component count by 6 parts per channel and improving MTBF. |
Use Scenario: Driving window lift motor direction logic and interior light dimming PWM inputs. IC Role / Device Role / Timing Role: Dual PNP switch controlling enable lines for H-bridge drivers and LED driver ICs. Use Value: −100 mV VCE(sat) minimizes heat generation during 100% duty cycle PWM, extending module lifetime in confined door cavities. |
| Consumer Appliance Control Board | Medical Infusion Pump Interface |
|
Use Scenario: Interfacing mechanical pushbuttons and rotary encoders to ARM Cortex-M0+ MCU. IC Role / Device Role / Timing Role: Debounced input conditioner and pull-down switch for interrupt-capable GPIOs. Use Value: Built-in R1/R2 provides consistent VI(on)/VI(off) thresholds across voltage tolerances, eliminating firmware calibration. |
Use Scenario: Safe isolation of alarm buzzer and status LED control from safety-critical MCU subsystems. IC Role / Device Role / Timing Role: Redundant dual-channel output driver with independent emitters for fault-tolerant signaling. Use Value: GND1/GND2 separation prevents single-point failure propagation between alarm and status paths per IEC 62304 Class C requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NHUMD13 | Same R1/R2 values but NPN/PNP configuration; complementary input polarity | Requires inverted logic drive; suitable for sourcing-based control topologies | Select when interfacing with open-collector outputs or when positive-going enable signals are required |
| EMZ6T2R | Higher VCEO (−100 V) but no integrated R2; requires external base resistor for gain control | Lacks built-in bias ratio; demands additional layout area and BOM item for R2 | Choose only if higher voltage margin is mandatory and design can accommodate extra passive components |
Compared with NHUMB13X, NHUMD13 offers inverted logic compatibility at identical biasing, while EMZ6T2R trades integration for extended voltage headroom-making NHUMB13X optimal for cost-sensitive, space-constrained designs requiring plug-and-play dual PNP sinking.
Availability
NHUMB13X is available at Aetrix Electronics and suitable for industrial PLC input modules, automotive door control units, and medical infusion pump interfaces requiring stable component supply with AEC-Q101 assurance and long-term production continuity.
Supply support for NHUMB13X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient power management solutions.
The NHUMB13X belongs to Nexperia's resistor-equipped transistor (RET) product line, engineered specifically for reducing component count and improving signal integrity in automotive body electronics and industrial control systems.
FAQ
What is the maximum continuous current per channel for NHUMB13X?
NHUMB13X supports −100 mA DC output current per transistor under Tamb ≤ 25 °C with derating to zero at 150 °C junction temperature. At 85 °C ambient, maximum continuous current is −72 mA per channel based on the 358 K/W per-device thermal resistance and 235 mW per-transistor power limit.
Can NHUMB13X replace BC856BS in existing designs?
Yes-NHUMB13X is a direct functional replacement for BC856BS in digital switching applications, offering identical SOT363 pinout, −80 V VCEO, and −100 mA IO. Its integrated 4.7 kΩ/47 kΩ bias network eliminates two external resistors per channel, simplifying layout and improving consistency over temperature versus discrete implementations.
Is the GND1 and GND2 pin electrically isolated internally?
Yes-GND1 and GND2 are physically separate emitter terminals with no internal connection. This isolation allows independent grounding of each transistor channel, preventing current-loop interference in mixed-signal systems and enabling differential sensing configurations without external isolation components.
Does NHUMB13X require external decoupling capacitors for stable operation?
No external decoupling is required for basic switching operation due to its low 3 pF collector capacitance and absence of internal oscillation-prone feedback paths. However, a 100 nF ceramic capacitor placed near the VCC return path (GND1/GND2) is recommended when driving inductive loads to suppress transient voltage spikes exceeding −80 V.
NHUMB13X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 80V
- Resistor - Base (R1):
- 4.7kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 150MHz
- Power - Max:
- 350mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NHUMB13X FAQ
1.How can I place an order for NHUMB13X through Aetrix?
Please submit a Request for Quotation (RFQ) for NHUMB13X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NHUMB13X reliable?
The price and inventory of NHUMB13X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHUMB13X is usually 5 days.
3.What payment methods are accepted for NHUMB13X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHUMB13X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NHUMB13X?
NHUMB13X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NHUMB13X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NHUMB13X?
For technical support, including NHUMB13X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHUMB13X requirements.
6.How does Aetrix verify that NHUMB13X is sourced from the original manufacturer or authorized distributors?
All NHUMB13X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHUMB13X meets industry standards.
7.What is the process for return or replacement of NHUMB13X?
All NHUMB13X units undergo pre-shipment inspection (PSI). If there is an issue with NHUMB13X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NHUMB13X part is unused and in its original packaging.
Return procedure for NHUMB13X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NHUMB13X Tags

-
SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

-
PUMD2,115
Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

-
PUMD12,115
Nexperia USA Inc.

-
PUMD9,115
Nexperia USA Inc.

-
PUMH9,115
Nexperia USA Inc.

-
PUMD3,115
Nexperia USA Inc.

-
DCX114EU-7-F
Diodes Incorporated

-
PUMD13,115
Nexperia USA Inc.
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