My Inquiry
My Account
Nexperia USA Inc. NHUMB1F
- Part No.:
- NHUMB1F
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NHUMB1F.pdf
- Description:
- TRANS PREBIAS 2PNP 80V 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,631
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NHUMB1F from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT363 (SC-88) package, designed for digital switching and IC input control. It features 80 V collector-emitter breakdown voltage, −100 mA output current per transistor, built-in 22 kΩ base resistors (R1 = R2), AEC-Q101 qualification, and operates across −55 °C to +150 °C ambient range.
For engineers reviewing the NHUMB1F datasheet, NHUMB1F pinout, NHUMB1F application, or NHUMB1F equivalent, this device serves as a space- and cost-optimized replacement for discrete BC856-based dual-PNP switch circuits in automotive body electronics, industrial I/O modules, and low-power logic-level translation where integrated biasing reduces PCB footprint and assembly steps.
Technical Context
This dual PNP RET integrates two matched silicon transistors with precision laser-trimmed on-chip base resistors (R1 = R2 = 22 kΩ), eliminating external bias components. Each transistor supports open-base VCEO = −80 V and continuous IO = −100 mA under Tamb ≤ 25 °C.
Thermal performance is characterized by Rth(j-a) = 358 K/W (per device, FR4 PCB), enabling stable operation up to 150 °C junction temperature. The device meets AEC-Q101 stress test requirements for automotive use, including HTOL, temperature cycling, and HTRB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −80 V - Maximum safe collector-emitter voltage with base open; enables robust switching in 24 V automotive and industrial supply rails. |
| IO | −100 mA - Continuous DC output current per transistor; sufficient for driving LEDs, small relays, or logic inputs without external current limiting. |
| R1 / R2 | 22 kΩ - Integrated base bias resistors; eliminates need for two external 22 kΩ resistors per transistor, reducing BOM count and layout area. |
| hFE | 70 (typ.) at VCE = −5 V, IC = −10 mA - DC current gain ensures reliable saturation with standard microcontroller GPIO drive levels (e.g., 3.3 V/5 V logic). |
| VCE(sat) | −100 mV (max.) at IC = −10 mA, IB = −0.5 mA - Low saturation voltage minimizes power loss and heat generation during active switching. |
| Ptot | 350 mW (per device, Tamb ≤ 25 °C) - Total power dissipation limit defines thermal derating envelope for PCB-level thermal design. |
Pinout & Package
SOT363 (SC-88) plastic surface-mounted package: 6-pin, 2.2 mm × 1.35 mm × 0.95 mm body, 0.65 mm pitch, gull-wing leads, JEDEC-compliant footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 (emitter TR1) | Emitter connection of first PNP transistor; common reference node for TR1's current path. |
| 2 | I1 (base TR1) | Input terminal for TR1; internally connected to 22 kΩ resistor R1, enabling direct logic-level drive. |
| 3 | O2 (collector TR2) | Output collector of second PNP transistor; active-low switching node for load connection. |
| 4 | GND2 (emitter TR2) | Emitter connection of second PNP transistor; independent ground return for TR2, supporting dual isolated switches. |
| 5 | I2 (base TR2) | Input terminal for TR2; internally connected to 22 kΩ resistor R2, identical biasing to I1. |
| 6 | O1 (collector TR1) | Output collector of first PNP transistor; complements O2 for dual-channel low-side or high-side switching configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Qualified per Automotive Electronics Council stress test standard for discrete semiconductors; suitable for under-hood and chassis applications. |
| Integrated R1/R2 = 22 kΩ | Eliminates four external bias resistors in dual-PNP switch designs, reducing component count, placement time, and solder joint risk. |
| −100 mA per transistor | Supports direct drive of medium-current loads (e.g., optocoupler LEDs, small solenoids) without external amplification stages. |
| Low VCE(sat) = −100 mV | Reduces conduction loss to <1 mW at 10 mA, improving efficiency and easing thermal management in dense layouts. |
| SC-88 footprint compatibility | Matches industry-standard SOT363 land pattern (2.65 mm × 1.8 mm reflow pad), enabling drop-in replacement in existing designs. |
Applications
| Automotive Door Module | Industrial PLC Input Stage |
|---|---|
Use Scenario: Level-shifting and debouncing of mechanical switch signals in door latch and window switch assemblies. IC Role / Device Role / Timing Role: Dual PNP switch providing active-low signal inversion and current-limited pull-down for MCU GPIO protection. Use Value: Built-in 22 kΩ resistors prevent floating inputs and eliminate external pull-down networks, reducing board area by 1.2 mm² per channel. |
Use Scenario: Isolating and conditioning 24 V DC field sensor inputs before feeding into 3.3 V FPGA or microcontroller I/O banks. IC Role / Device Role / Timing Role: High-voltage tolerant PNP pair acting as voltage translator and ESD-protected interface buffer. Use Value: −80 V VCEO withstands load dump transients; AEC-Q101 rating ensures reliability in harsh factory environments. |
| Consumer Appliance Control Board | Medical Diagnostic Instrument I/O |
Use Scenario: Driving indicator LEDs and small relays in washing machine control panels with limited PCB real estate. IC Role / Device Role / Timing Role: Dual-channel load switch replacing two BC856+resistor combinations for compact LED and relay driver functions. Use Value: 350 mW total power dissipation allows simultaneous operation of both transistors at 50 mA each without thermal throttling. |
Use Scenario: Safe, low-leakage switching of analog sensor enable lines in portable diagnostic devices requiring low standby current. IC Role / Device Role / Timing Role: Precision PNP pair with −130 µA max IEBO minimizing quiescent current draw during sleep mode. Use Value: Ultra-low off-state emitter-base leakage preserves battery life in battery-powered instruments with multi-week idle periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP/PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NHUMB11 | R1 = R2 = 10 kΩ; hFE = 50 (min); lower input impedance, higher base current demand. | Better suited for fast-switching digital logic with stronger drive capability but higher static power. | Select when interfacing with low-impedance sources or requiring faster turn-on response at expense of slightly higher IB. |
| NHUMB2 | R1 = R2 = 47 kΩ; hFE = 100 (min); higher input impedance, lower base current, reduced gain variation over temperature. | Optimized for ultra-low-power microcontroller GPIOs and battery-sensitive systems with marginal drive strength. | Select when minimizing base current is critical (e.g., 1.8 V I/O) or operating above 85 °C where hFE stability matters. |
Compared with NHUMB11 (10 kΩ) and NHUMB2 (47 kΩ), NHUMB1F's 22 kΩ bias offers balanced trade-off between drive margin and power efficiency-ideal for 3.3 V/5 V logic families without overdriving or starving base current.
Availability
NHUMB1F is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input conditioning, and consumer appliance control boards requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for NHUMB1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, mobile, and computing markets.
NHUMB1F belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to replace discrete transistor-resistor combinations in space-constrained, cost-sensitive digital switching applications while maintaining automotive-grade reliability.
FAQ
What is the maximum allowable junction temperature for NHUMB1F?
The absolute maximum junction temperature (Tj) for NHUMB1F is 150 °C, as defined in the Limiting Values table. Operation beyond this threshold risks permanent parametric shift or failure. Derating begins at Tamb > 25 °C per the 358 K/W per-device thermal resistance curve in Figure 1.
Can NHUMB1F be used in high-frequency switching applications?
NHUMB1F has a typical transition frequency (fT) of 150 MHz at VCE = −5 V and IC = −10 mA, but it is not optimized for RF or high-speed digital switching. Its primary design intent is DC and low-frequency (<1 MHz) digital switching, where its integrated resistors and AEC-Q101 qualification provide value.
How does the marking code "6C%" correspond to NHUMB1F?
The marking code "6C%" on the top of the SOT363 package identifies the NHUMB1F variant, where "6C" is the device-specific code per Nexperia's marking standard and "%" is a placeholder for the manufacturing site code (e.g., "6C1" for one facility). This matches Table 5 in the datasheet.
Is NHUMB1F pin-compatible with BC856-based discrete solutions?
No-NHUMB1F is not pin-compatible with BC856 transistors. It uses a 6-pin SOT363 package with dedicated GND, input, and output terminals per transistor, whereas BC856 is a 3-pin SOT23 device. Layout redesign is required, but the integrated resistors eliminate four external components per channel.
NHUMB1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 80V
- Resistor - Base (R1):
- 22kOhms
- Resistor - Emitter Base (R2):
- 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 150MHz
- Power - Max:
- 235mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NHUMB1F FAQ
1.How can I place an order for NHUMB1F through Aetrix?
Please submit a Request for Quotation (RFQ) for NHUMB1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NHUMB1F reliable?
The price and inventory of NHUMB1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHUMB1F is usually 5 days.
3.What payment methods are accepted for NHUMB1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHUMB1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NHUMB1F?
NHUMB1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NHUMB1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NHUMB1F?
For technical support, including NHUMB1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHUMB1F requirements.
6.How does Aetrix verify that NHUMB1F is sourced from the original manufacturer or authorized distributors?
All NHUMB1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHUMB1F meets industry standards.
7.What is the process for return or replacement of NHUMB1F?
All NHUMB1F units undergo pre-shipment inspection (PSI). If there is an issue with NHUMB1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NHUMB1F part is unused and in its original packaging.
Return procedure for NHUMB1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NHUMB1F Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
