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Nexperia USA Inc. NHUMB9F
- Part No.:
- NHUMB9F
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NHUMB9F.pdf
- Description:
- TRANS PREBIAS 2PNP 80V 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,185
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Product details
Overview
NHUMB9F from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT363 (SC-88) package, designed for digital switching and IC input control. It features 80 V collector-emitter breakdown voltage, −100 mA output current per transistor, built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ), and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the NHUMB9F datasheet, NHUMB9F pinout, NHUMB9F application, or NHUMB9F equivalent, this device serves as a space- and cost-optimized replacement for discrete PNP pairs in load switching, logic-level translation, and microcontroller I/O buffering circuits where integrated base resistors reduce BOM count and layout complexity.
Technical Context
This dual PNP RET integrates two matched PNP transistors with precision laser-trimmed on-chip resistors: R1 (10 kΩ) connects base to input, R2 (47 kΩ) connects base to emitter for active pull-down. The structure enables direct TTL/CMOS-compatible drive without external base resistors.
Each transistor operates with VCEO = −80 V, IO = −100 mA, and VCE(sat) ≤ −100 mV at IC = −10 mA / IB = −0.5 mA. Thermal resistance Rth(j-a) is 358 K/W per device on FR4 PCB, supporting stable operation up to Tj = 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −80 V - Enables safe switching of 24 V industrial loads and automotive 12 V/24 V rails with margin. |
| IO | −100 mA - Supports driving LEDs, relays, small solenoids, or logic inputs without external current gain staging. |
| R1 / R2 | 10 kΩ / 47 kΩ - Provides fixed base bias ratio (R2/R1 = 4.7) for predictable turn-on/off thresholds and noise immunity. |
| VCE(sat) | ≤ −100 mV @ IC = −10 mA - Minimizes conduction loss and self-heating during sustained on-state operation. |
| VI(on) / VI(off) | −1.6 V / −690 mV @ IC = −10 mA - Defines clean logic-level switching window compatible with 3.3 V and 5 V MCU outputs. |
| AEC-Q101 | Qualified - Validated for automotive underhood applications including engine control modules and body electronics. |
| Ptot (device) | 350 mW @ Tamb ≤ 25 °C - Allows dual-transistor operation within thermal limits on standard FR4 PCBs without heatsinking. |
Pinout & Package
SOT363 (SC-88) plastic surface-mounted package with 6 leads; 1.3 mm × 2.2 mm footprint; 0.65 mm pitch; 0.95 mm max height; JEDEC-compliant reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 (emitter TR1) | Emitter connection for first PNP transistor; common reference node for TR1 internal bias network. |
| 2 | I1 (base input TR1) | Input terminal for TR1; internally connected to R1 (10 kΩ) and R2 (47 kΩ) network. |
| 3 | O2 (collector TR2) | Output collector of second PNP transistor; electrically isolated from TR1's collector (Pin 6). |
| 4 | GND2 (emitter TR2) | Emitter connection for second PNP transistor; independent ground path from GND1 (Pin 1). |
| 5 | I2 (base input TR2) | Input terminal for TR2; shares same R1/R2 resistor topology as Pin 2 but isolated circuit domain. |
| 6 | O1 (collector TR1) | Output collector of first PNP transistor; supports independent switching control from O2 (Pin 3). |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1/R2 bias network | Eliminates 4 external resistors per pair, reducing PCB area by ≥30% vs discrete solutions. |
| Matched dual PNP topology | Enables symmetrical push-pull or cascaded switching without inter-device parameter variation. |
| −80 V VCEO rating | Supports direct interface with 24 V industrial buses and automotive battery-supplied systems. |
| AEC-Q101 qualification | Validated for temperature cycling, humidity, mechanical shock, and ESD per automotive stress test standards. |
| Low VCE(sat) | Reduces power dissipation to <1 mW at 10 mA load, enabling high-density routing in compact modules. |
Applications
| Automotive Body Control Module | Industrial PLC Digital Output |
|---|---|
Use Scenario: Driving door lock actuators and interior lighting from 12 V battery rail using MCU GPIO. IC Role / Device Role / Timing Role: Dual PNP switch providing isolated low-side sink capability with built-in base termination. Use Value: Eliminates need for two separate BC856-based circuits and four external resistors, cutting BOM cost by 35% and layout area by 40%. |
Use Scenario: Controlling 24 V solenoid valves and indicator LEDs in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Dual-channel level-shifting switch translating 3.3 V FPGA outputs to 24 V loads with fast turn-off (<1 µs). Use Value: Achieves guaranteed VI(off) ≤ −690 mV, preventing false triggering from EMI in noisy factory environments. |
| Consumer Appliance UI Panel | Medical Diagnostic Equipment I/O |
Use Scenario: Buffering tactile button inputs and driving status LEDs in smart home appliances with mixed 3.3 V/5 V logic domains. IC Role / Device Role / Timing Role: Dual-input signal conditioner isolating MCU pins from external ESD events and voltage transients. Use Value: Built-in R2 resistor provides active base pull-down, eliminating floating input risk and improving EMC robustness per IEC 61000-4-2 Level 4. |
Use Scenario: Isolating microcontroller I/O from patient-connected sensors and relay-driven isolation barriers in portable diagnostic tools. IC Role / Device Role / Timing Role: Safety-critical signal switch ensuring galvanic separation between digital control and analog front-end stages. Use Value: AEC-Q101 qualification confirms long-term parametric stability under thermal cycling (−40 °C to +125 °C), meeting IEC 60601-1 reliability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NHUMD9 | Same R1/R2 values (10 kΩ/47 kΩ) but NPN/PNP configuration; complementary input polarity. | Required when one channel needs NPN logic-active-low drive and the other PNP logic-active-high drive. | Select NHUMD9 only if mixed-polarity switching is needed; not drop-in for NHUMB9F's dual-PNP use cases. |
| NHUMH9 | Same R1/R2 (10 kΩ/47 kΩ) and PNP/PNP topology, but in SOT353 (SC-70) package - smaller footprint (1.25 × 2.1 mm), lower Ptot (235 mW). | Suitable for ultra-compact designs where board space is constrained but thermal budget is tighter. | Choose NHUMH9 when PCB area is critical and load currents remain ≤60 mA; verify thermal derating on FR4. |
Compared with NHUMD9 and NHUMH9, NHUMB9F uniquely balances dual-PNP functionality, 350 mW per-device power handling, and SOT363 manufacturability-making it optimal for automotive and industrial applications requiring both robustness and pick-and-place compatibility.
Availability
NHUMB9F is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC digital outputs, and medical diagnostic equipment I/O requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for NHUMB9F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
NHUMB9F belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete transistor-resistor combinations in cost-sensitive, space-constrained digital interface applications.
FAQ
What is the maximum continuous collector current per transistor in NHUMB9F?
The absolute maximum continuous collector current per transistor is −100 mA at Tamb ≤ 25 °C, as specified in Table 2 (Quick reference data) and Table 6 (Limiting values). Derating applies above 25 °C per Fig. 1: at 75 °C ambient, max IO reduces to approximately −70 mA per transistor due to 358 K/W junction-to-ambient thermal resistance.
Can NHUMB9F be used as a direct replacement for BC856BS in existing designs?
Yes, NHUMB9F replaces two BC856BS transistors plus four external base resistors in dual-switch configurations. Its pinout differs (SOT363 vs SOT363-compatible layout), but electrical behavior matches: identical VCEO, hFE range, and saturation voltage. Layout redesign is required to accommodate the shared GND pins (1 and 4) and cross-coupled I/O arrangement.
What is the significance of the "F" suffix in NHUMB9F?
The "F" suffix denotes tape-and-reel packaging per standard Nexperia ordering convention: NHUMB9F indicates 3,000 units per 12 mm tape reel (EIA-481 compliant), with moisture sensitivity level (MSL) 1 and Pb-free finish. This differs from NHUMB9 (bulk or ammo pack) and ensures automated assembly compatibility.
Does NHUMB9F support bidirectional signal routing between its two transistor channels?
No. NHUMB9F provides two fully isolated PNP transistor channels with independent emitters (Pins 1 and 4), collectors (Pins 6 and 3), and base inputs (Pins 2 and 5). There is no internal connection between channels; they operate as separate switches sharing only substrate potential. Signal routing must be implemented externally via PCB traces.
NHUMB9F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 80V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 150MHz
- Power - Max:
- 350mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NHUMB9F FAQ
1.How can I place an order for NHUMB9F through Aetrix?
Please submit a Request for Quotation (RFQ) for NHUMB9F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NHUMB9F reliable?
The price and inventory of NHUMB9F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHUMB9F is usually 5 days.
3.What payment methods are accepted for NHUMB9F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHUMB9F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NHUMB9F?
NHUMB9F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NHUMB9F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NHUMB9F?
For technical support, including NHUMB9F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHUMB9F requirements.
6.How does Aetrix verify that NHUMB9F is sourced from the original manufacturer or authorized distributors?
All NHUMB9F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHUMB9F meets industry standards.
7.What is the process for return or replacement of NHUMB9F?
All NHUMB9F units undergo pre-shipment inspection (PSI). If there is an issue with NHUMB9F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NHUMB9F part is unused and in its original packaging.
Return procedure for NHUMB9F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NHUMB9F Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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