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Nexperia USA Inc. NHUMD12F
- Part No.:
- NHUMD12F
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NHUMD12F.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:18,070
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Product details
Overview
NHUMD12F from Nexperia is a resistor-equipped double transistor (RET) containing one NPN and one PNP silicon bipolar transistor with integrated bias resistors (R1 = R2 = 47 kΩ) in a single SOT363 (SC-88) package. It delivers 100 mA output current per transistor, supports 80 V collector-emitter breakdown voltage, and is AEC-Q101 qualified for automotive digital switching applications.
For engineers reviewing the NHUMD12F datasheet, NHUMD12F pinout, NHUMD12F application, or NHUMD12F equivalent, this device serves as a space- and BOM-optimized replacement for discrete BC846/BC856 pairs in level-shifting, I/O buffering, and load-switching circuits where built-in base resistors reduce external component count and placement cost.
Technical Context
The NHUMD12F integrates two complementary transistors - TR1 (NPN) and TR2 (PNP) - each with dedicated input (base), output (collector), and ground (emitter) terminals, plus on-chip R1 and R2 bias resistors (47 kΩ each). Its dual-transistor topology enables push-pull or complementary switching without external bias networks.
It operates across −55 °C to +150 °C ambient, supports VI(on) up to 5 V (TR1) and −80 V (TR2), and maintains hFE ≥100 at IC = 10 mA, VCE = 5 V for TR1 and VCE = −5 V for TR2 - enabling reliable digital interface control under wide temperature and voltage margins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum safe collector-emitter voltage per transistor; enables use in 24 V and 48 V industrial bus interfaces. |
| IO | 100 mA - Continuous DC output current per transistor; sufficient for driving LEDs, small relays, or logic inputs. |
| R1 / R2 | 47 kΩ - Integrated base bias resistors eliminate need for two external resistors per transistor, reducing PCB area by ~30% vs discrete solutions. |
| hFE | ≥100 @ IC = 10 mA - High DC current gain ensures low base drive requirement and stable saturation under load variation. |
| VCEsat | ≤100 mV @ IC = 10 mA, IB = 0.5 mA - Low saturation voltage minimizes power loss and self-heating in high-duty-cycle switching. |
| fT | 170 MHz (TR1), 150 MHz (TR2) - Sufficient bandwidth for digital signal switching up to ~30 MHz with clean edge integrity. |
| AEC-Q101 | Qualified - Meets automotive stress test requirements for temperature cycling, HTRB, and ESD, supporting under-hood and infotainment applications. |
Pinout & Package
SOT363 (SC-88) is a 6-pin, surface-mount plastic package measuring 2.2 mm × 1.35 mm × 0.95 mm with gull-wing leads and pin 1 index mark. It supports reflow and wave soldering per JEDEC J-STD-020 and J-STD-006 standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emitter connection of TR1 (NPN); common reference for first transistor's current path. |
| 2 | I1 | Base input of TR1 (NPN); accepts logic-level signals directly due to internal R1 bias network. |
| 3 | O2 | Collector output of TR2 (PNP); provides active-low switching capability with grounded emitter (Pin 4). |
| 4 | GND2 | Emitter connection of TR2 (PNP); independent ground node enabling floating or split-rail configurations. |
| 5 | I2 | Base input of TR2 (PNP); compatible with negative-going control signals or inverted logic outputs. |
| 6 | O1 | Collector output of TR1 (NPN); delivers active-high switching with low VCEsat when driven via Pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1/R2 bias network | 47 kΩ ±30% per resistor - eliminates external base resistors, cuts bill-of-materials count by 4 components per RET pair. |
| Dual complementary topology | NPN + PNP in one package - enables compact push-pull drivers, level translators, and bidirectional I/O buffers without cross-coupling layout. |
| High breakdown voltage | 80 V VCEO/VCEO - supports operation in 24 V CAN/LIN subsystems and 48 V mild-hybrid power domains without derating. |
| Low thermal resistance | Rth(j-a) = 358 K/W (per device) - enables 235 mW continuous dissipation at 25 °C ambient, suitable for unheatsinked PCB layouts. |
| AEC-Q101 qualification | Passes HTGB, TC, AC, and ESD tests - validated for automotive Grade 2 (−40 °C to +105 °C case) and extended temp operation up to 150 °C junction. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Output Stage |
|---|---|
Use Scenario: Driving LED status indicators and solenoid valves in door modules and lighting controllers. IC Role / Device Role / Timing Role: Dual-transistor switch providing isolated high-side (TR1) and low-side (TR2) control with shared logic interface. Use Value: Reduces footprint by 40% vs discrete BC846+BC856 pair while maintaining 80 V surge tolerance and AEC-Q101 compliance. |
Use Scenario: Level-shifting and isolation between 3.3 V microcontroller GPIO and 24 V field-side loads. IC Role / Device Role / Timing Role: Complementary buffer translating logic states with matched propagation delay and rail-to-rail swing. Use Value: Eliminates four external resistors and two passives, improving assembly yield and reducing solder joint failure risk. |
| Consumer Appliance Motor Driver Interface | Medical Diagnostic Equipment Signal Conditioning |
Use Scenario: Controlling small DC brush motors and fan speed in HVAC and kitchen appliances. IC Role / Device Role / Timing Role: Half-bridge pre-driver stage accepting PWM input and delivering phase-complementary gate signals. Use Value: Enables <100 ns turn-on/turn-off matching between NPN and PNP sections, minimizing shoot-through risk. |
Use Scenario: Isolating analog sensor inputs from noisy digital control circuitry in portable ultrasound and patient monitors. IC Role / Device Role / Timing Role: Active low-pass filter enable/disable switch with <1 µs response time and <100 nA leakage. Use Value: Maintains signal integrity with <2.5 pF collector capacitance (TR1) and <3 pF (TR2), minimizing capacitive loading on precision front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped double transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NHUMD2 | R1/R2 = 22 kΩ; lower VI(on) threshold (3 V max); hFE ≥70 | Better suited for 3.3 V logic systems with tighter input voltage margins | Select when driving from low-voltage MCUs without level shifters |
| NHUMD3 | R1/R2 = 10 kΩ; lowest VI(on) (2.5 V max); hFE ≥50; higher input current draw | Optimized for 1.8–2.5 V I/O domains and high-speed switching (>10 MHz) | Choose for ultra-low-threshold digital interfaces requiring minimal base drive |
Compared with NHUMD2 and NHUMD3, NHUMD12F offers highest voltage tolerance (80 V), largest bias resistors (47 kΩ), and highest hFE (≥100), making it optimal for 24–48 V industrial and automotive applications where noise immunity, low quiescent current, and robust saturation are prioritized over raw speed.
Availability
NHUMD12F is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and medical diagnostic equipment requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle support.
Supply support for NHUMD12F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.
The NHUMD12F belongs to Nexperia's resistor-equipped transistor (RET) family, engineered to replace discrete transistor-resistor combinations in space-constrained, cost-sensitive digital interface and switching applications.
FAQ
What is the maximum operating junction temperature for NHUMD12F?
The absolute maximum junction temperature (Tj) is 150 °C, verified per IEC 60134 limiting values. Derating begins above 25 °C ambient at 358 K/W (per device), allowing 235 mW total power dissipation at room temperature and ~120 mW at 85 °C ambient on standard FR4 PCB.
Can NHUMD12F be used in linear amplification mode?
No - NHUMD12F is optimized for digital switching, not analog amplification. Its integrated bias resistors fix base current, and hFE variation across IC (Fig. 27–33) and temperature makes it unsuitable for stable small-signal gain. Use discrete transistors like BC847 for linear applications.
How does the pin configuration support independent transistor operation?
Pins 1/GND1 and 4/GND2 provide separate emitter connections, allowing TR1 and TR2 to operate with different ground references - e.g., TR1 referenced to system GND and TR2 referenced to an isolated or negative rail - enabling level translation and floating load control without external isolation components.
Is the marking code "6S%" unique to NHUMD12F?
Yes - "6S%" is the official Nexperia marking for NHUMD12F, where "%" denotes the manufacturing site code. This distinguishes it from NHUMD3 ("6M%") and NHUMD2 ("6Q%"), ensuring traceability and preventing substitution errors during automated optical inspection (AOI) and assembly.
NHUMD12F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 80V
- Resistor - Base (R1):
- 47kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 170MHz, 150MHz
- Power - Max:
- 350mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NHUMD12F FAQ
1.How can I place an order for NHUMD12F through Aetrix?
Please submit a Request for Quotation (RFQ) for NHUMD12F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NHUMD12F reliable?
The price and inventory of NHUMD12F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHUMD12F is usually 5 days.
3.What payment methods are accepted for NHUMD12F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHUMD12F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NHUMD12F?
NHUMD12F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NHUMD12F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NHUMD12F?
For technical support, including NHUMD12F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHUMD12F requirements.
6.How does Aetrix verify that NHUMD12F is sourced from the original manufacturer or authorized distributors?
All NHUMD12F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHUMD12F meets industry standards.
7.What is the process for return or replacement of NHUMD12F?
All NHUMD12F units undergo pre-shipment inspection (PSI). If there is an issue with NHUMD12F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NHUMD12F part is unused and in its original packaging.
Return procedure for NHUMD12F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NHUMD12F Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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