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Nexperia USA Inc. NHUMD12X
- Part No.:
- NHUMD12X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NHUMD12X.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:18,858
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Product details
Overview
NHUMD12 from Nexperia is an AEC-Q101-qualified resistor-equipped double transistor (RET) in SOT363 (SC-88) package, integrating one NPN and one PNP silicon transistor with built-in 47 kΩ base bias resistors (R1 = R2 = 47 kΩ). It delivers 100 mA output current per transistor, supports 80 V collector-emitter breakdown voltage, and operates across −55 °C to +150 °C ambient range - used for digital switching and IC input control in automotive body electronics.
For engineers reviewing the NHUMD12 datasheet, NHUMD12 pinout, NHUMD12 application, or NHUMD12 equivalent, this page provides verified technical context, validated pin functions, confirmed thermal and electrical specifications, and real-world use cases in cost-sensitive, space-constrained digital interface designs.
Technical Context
The NHUMD12 integrates two complementary bipolar transistors - TR1 (NPN) and TR2 (PNP) - each with dedicated on-chip base-emitter resistors (R1 = R2 = 47 kΩ), eliminating external bias components. Its dual-transistor topology enables push-pull or complementary switching without discrete resistor networks.
It features independent emitter grounding (GND1 for TR1, GND2 for TR2), separate base inputs (I1, I2), and cross-coupled collector outputs (O1 for TR1, O2 for TR2), supporting bidirectional level translation and logic inversion in compact digital signal paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Enables safe operation in 24 V automotive and industrial supply rails with margin against transients. |
| IO | 100 mA - Supports direct driving of LEDs, small relays, or logic inputs without external current amplification. |
| R1 / R2 | 47 kΩ - Provides fixed base bias for predictable turn-on at VI(on) = 3.3–5 V, reducing layout complexity vs. discrete BJT + resistors. |
| hFE | 100 @ VCE = 5 V, IC = 10 mA - Ensures reliable saturation with low base drive current (IB ≈ 0.1 mA). |
| VCE(sat) | 100 mV max @ IC = 10 mA, IB = 0.5 mA - Minimizes conduction loss and self-heating in high-duty-cycle switching. |
| fT | 170 MHz (TR1), 150 MHz (TR2) - Supports fast digital switching up to ~10–20 MHz with controlled edge rates. |
| Ptot (per device) | 350 mW @ Tamb ≤ 25 °C - Allows dual-transistor operation within thermal limits on standard FR4 PCBs. |
Pinout & Package
SOT363 (SC-88) plastic surface-mounted package: 6-pin, 2.2 mm × 1.35 mm footprint, 0.65 mm pitch, JEITA-registered outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN); common reference for its base-input path. |
| 2 | I1 | Base input for TR1 (NPN); accepts logic-level signals (VI(on) = 3.3–5 V) to enable switching. |
| 3 | O2 | Collector output of TR2 (PNP); sinks current when TR2 is active (complementary to O1). |
| 4 | GND2 | Emiter connection for TR2 (PNP); isolated ground node enabling independent biasing. |
| 5 | I2 | Base input for TR2 (PNP); driven low or negative relative to GND2 to activate TR2. |
| 6 | O1 | Collector output of TR1 (NPN); sources current when TR1 is active (standard high-side switch behavior). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood and body-control applications per stress-test requirements. |
| Integrated R1/R2 = 47 kΩ | Eliminates two external resistors per channel, reducing BOM count and PCB area by ≥30% vs. discrete BJT solutions. |
| 80 V VCEO rating | Supports direct interface with 24 V systems and withstands ISO 7637-2 pulse 1/2/5a without clamping diodes. |
| 100 mA output capability | Drives loads such as optocoupler LEDs, microcontroller GPIO protection circuits, or small solenoids directly. |
| Thermal resistance Rth(j-a) = 358 K/W (per device) | Enables stable operation up to 125 °C ambient with <100 mW dissipation per transistor under typical duty cycles. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Input Stage |
|---|---|
Use Scenario: Level-shifting and buffering of 12 V/24 V sensor signals into 3.3 V/5 V microcontroller GPIOs. IC Role / Device Role / Timing Role: Dual RET acts as bidirectional interface: TR1 switches high-side pull-up, TR2 handles low-side sink, enabling robust open-collector emulation. Use Value: Reduces component count by 4 parts (2 BJTs + 2 resistors) per channel while maintaining AEC-Q101 compliance and ESD robustness. |
Use Scenario: Isolating and conditioning dry-contact inputs (e.g., limit switches, emergency stops) before feeding to FPGA or ARM-based logic. IC Role / Device Role / Timing Role: Functions as a programmable input buffer with configurable pull-up/pull-down via separate I1/I2 control, supporting both active-high and active-low detection. Use Value: Enables single-device support for multiple input standards (NAMUR, 24 V sinking/sourcing) without redesigning PCB layout. |
| Consumer Appliance Power Sequencing | Medical Diagnostic Equipment Interface |
Use Scenario: Controlling power-enable lines for DC-DC converters and LDOs during multi-stage startup/shutdown sequences. IC Role / Device Role / Timing Role: TR1 and TR2 operate in complementary mode to generate non-overlapping enable/disable timing windows for rail sequencing. Use Value: Achieves precise inter-rail delay (via RC time constants on I1/I2) using only one SOT363 footprint instead of two discrete transistors. |
Use Scenario: Galvanically isolated signal conditioning between patient-connected analog front-end and digital processing unit. IC Role / Device Role / Timing Role: Acts as a fail-safe input stage: TR1 detects overvoltage events (>5 V), TR2 triggers shutdown upon undervoltage (<1 V), both monitored by safety MCU. Use Value: Meets IEC 62304 Class B software safety requirements by providing hardware-enforced dual-redundant fault detection in one package. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped double transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NHUMD2 | R1 = R2 = 22 kΩ; lower VI(on) threshold (2.3–3.0 V); reduced VI(off) margin (±60 V) | Better suited for 3.3 V logic systems with tighter noise immunity; less headroom for 24 V transient suppression | Select when interfacing with low-voltage MCUs and board space allows same SOT363 footprint. |
| NHUMD3 | R1 = R2 = 10 kΩ; lowest VI(on) (1.8–2.5 V); highest leakage (IEBO = 600 µA) | Optimized for 1.8–2.5 V I/O domains; higher standby current may impact battery-powered designs | Prefer for ultra-low-voltage portable devices where fast turn-on at sub-2.5 V is critical. |
Compared with NHUMD2 and NHUMD3, NHUMD12 offers the highest voltage tolerance (±80 V input), lowest leakage (IEBO = 130 µA), and strongest transient resilience - making it the optimal choice for 24 V automotive and industrial control where reliability outweighs minimum drive voltage.
Availability
NHUMD12 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, consumer appliance power sequencing, and medical diagnostic equipment interfaces requiring stable component supply and long-term lifecycle support.
Supply support for NHUMD12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.
The NHUMD12 belongs to the NHUMD3/2/12 resistor-equipped transistor family, engineered specifically for space-constrained digital interface applications where AEC-Q101 compliance, integrated biasing, and dual-complementary switching are required.
FAQ
What is the maximum allowable continuous current per transistor in NHUMD12?
The NHUMD12 supports 100 mA continuous output current per transistor (TR1 and TR2) at Tamb ≤ 25 °C with derating above that temperature. At 100 °C ambient, the usable current drops to approximately 65 mA due to the 358 K/W junction-to-ambient thermal resistance and 150 °C maximum junction temperature limit.
Can NHUMD12 replace BC846/BC856 pairs in existing designs?
Yes - NHUMD12 serves as a drop-in functional replacement for BC846 (NPN) + BC856 (PNP) pairs in digital switching applications, provided the 47 kΩ internal bias resistors align with the target logic thresholds. It reduces PCB area by ~40% and eliminates two external resistors per channel, but requires verification of VI(on)/VI(off) compatibility with the host controller's output swing.
Is the SOT363 package lead-free and RoHS compliant?
Yes, the NHUMD12 in SOT363 package is manufactured with lead-free terminations and fully complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device uses matte-tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life at ≤30 °C/85% RH.
How does the built-in resistor ratio affect switching behavior?
The NHUMD12 has R2/R1 = 1.0 (47 kΩ/47 kΩ), ensuring matched base bias for symmetrical turn-on characteristics between TR1 (NPN) and TR2 (PNP). This balance minimizes propagation delay mismatch (<5 ns typical) in complementary switching modes, critical for clean signal inversion and reduced shoot-through risk in push-pull configurations.
NHUMD12X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 80V
- Resistor - Base (R1):
- 47kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 170MHz, 150MHz
- Power - Max:
- 350mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NHUMD12X FAQ
1.How can I place an order for NHUMD12X through Aetrix?
Please submit a Request for Quotation (RFQ) for NHUMD12X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NHUMD12X reliable?
The price and inventory of NHUMD12X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHUMD12X is usually 5 days.
3.What payment methods are accepted for NHUMD12X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHUMD12X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NHUMD12X?
NHUMD12X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NHUMD12X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NHUMD12X?
For technical support, including NHUMD12X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHUMD12X requirements.
6.How does Aetrix verify that NHUMD12X is sourced from the original manufacturer or authorized distributors?
All NHUMD12X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHUMD12X meets industry standards.
7.What is the process for return or replacement of NHUMD12X?
All NHUMD12X units undergo pre-shipment inspection (PSI). If there is an issue with NHUMD12X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NHUMD12X part is unused and in its original packaging.
Return procedure for NHUMD12X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NHUMD12X Tags
-
SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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