Nexperia USA Inc. NHUMD13F

Overview

NHUMD13F from Nexperia is an AEC-Q101-qualified resistor-equipped double transistor (RET) in SOT363 (SC-88) package, integrating one NPN and one PNP silicon transistor with built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ). It delivers 100 mA output current per transistor, supports 80 V collector-emitter breakdown voltage, and operates across −55 °C to +150 °C ambient range - used for digital signal switching and IC input control in automotive body electronics.

For engineers reviewing the NHUMD13F datasheet, NHUMD13F pinout, NHUMD13F application, or NHUMD13F equivalent, this page provides verified pin functions, thermal resistance (358 K/W device-level), on-state input voltage (VI(on) = 1.4 V typ. for NPN), off-state input voltage (VI(off) = 625 mV typ.), and validated alternatives for discrete logic-level switching circuits.

Technical Context

This dual-transistor device implements a monolithic NPN+PNP pair with integrated base bias networks - R1 connects base to input, R2 connects base to emitter - enabling single-resistor drive without external components. The NPN transistor (TR1) exhibits fT = 170 MHz and VCE(sat) ≤ 100 mV at IC = 10 mA/IB = 0.5 mA; the PNP transistor (TR2) delivers matching performance with fT = 150 MHz and symmetric VI(on)/VI(off) thresholds under negative polarity operation.

Thermal design is constrained by per-device Ptot = 350 mW at Tamb ≤ 25 °C on FR4 PCB, derating linearly above 25 °C with Rth(j-a) = 358 K/W. Electrical isolation between channels is maintained via shared GND pins (Pin 1 and Pin 4), while input/output separation enables independent control of two switching paths in compact space-constrained layouts.

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin surface-mount plastic package: 2.2 mm × 1.35 mm footprint, 0.95 mm max height, gull-wing leads, JEITA code SC-88, compatible with reflow and wave soldering per Figures 44–45.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar resistor-equipped double transistor applications.

Compared with NHUMD10F and NHUMD9F, NHUMD13F offers balanced input sensitivity and drive strength - its 4.7 kΩ R1 delivers optimal VI(on)/VI(off) margins for mainstream 3.3 V/5 V CMOS interfaces while maintaining low quiescent current.

Availability

NHUMD13F is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, consumer appliance control boards, and medical diagnostic equipment requiring stable component supply and AEC-Q101 compliance.

Supply support for NHUMD13F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, size, and robustness.

NHUMD13F belongs to the NHUMD10/13/9 RET family designed specifically for space-constrained digital switching in automotive and industrial applications where integration, qualification, and thermal performance are critical.

FAQ

What is the maximum operating temperature for NHUMD13F?

NHUMD13F has a maximum junction temperature (Tj) of 150 °C and an ambient operating range of −55 °C to +150 °C. Its thermal resistance Rth(j-a) is 358 K/W on FR4 PCB, meaning at 25 °C ambient it can dissipate up to 350 mW before reaching Tj = 150 °C. Derating is required above 25 °C per Figure 1.

Can NHUMD13F replace BC846/BC856 transistors directly?

Yes - NHUMD13F serves as a drop-in functional replacement for BC846 (NPN) and BC856 (PNP) pairs in digital switching applications. Its integrated R1/R2 eliminates two external resistors per transistor, reduces PCB area by ~30%, and maintains identical SOT363 pinout and electrical ratings (80 V VCEO, 100 mA IO).

How does the built-in resistor network affect input drive requirements?

The R1 = 4.7 kΩ and R2 = 47 kΩ network sets fixed base current paths: for NHUMD13F's NPN (TR1), typical input current is 1.2 mA at VI(on) = 1.4 V. This allows direct drive from most 3.3 V/5 V GPIOs without additional buffering, while VI(off) = 625 mV ensures clean cutoff even with logic '0' noise margins.

Is NHUMD13F suitable for high-frequency PWM applications?

NHUMD13F supports PWM switching up to ~10 MHz due to fT = 170 MHz (NPN) and 150 MHz (PNP), but practical edge rates are limited by Cc ≤ 2.5 pF and VCE(sat) ≤ 100 mV. For >1 MHz operation, layout must minimize trace inductance and ensure adequate gate drive slew rate; thermal limits apply at high duty cycles.