Nexperia USA Inc. NHUMH10X

Overview

NHUMH10 from Nexperia is an AEC-Q101-qualified NPN/NPN resistor-equipped double transistor (RET) in SOT363 (SC-88) package, rated for 80 V V_CEO, 100 mA output current per transistor, with built-in 2.2 kΩ R1 and 47 kΩ R2 bias resistors. It functions as a dual digital switching element for IC input control and low-power load switching in automotive and industrial PCBs.

For engineers reviewing the NHUMH10 datasheet, NHUMH10 pinout, NHUMH10 application, or NHUMH10 equivalent, this device serves as a space- and cost-optimized replacement for discrete BC846-based driver stages where integrated base resistors reduce layout complexity and assembly steps.

Technical Context

This dual NPN RET integrates two matched transistors with dedicated emitter-grounded configuration and on-die bias networks. Each channel features independent base inputs (I1/I2), collector outputs (O1/O2), and shared ground terminals (GND1/GND2), enabling independent or cascaded switching without external pull-down or current-limiting resistors.

The device operates with VI(on) = 0.81–1.2 V and VI(off) = 0.5–0.595 V at IC = 100 µA, supporting TTL/CMOS-compatible logic drive. Its 80 V breakdown rating and 150 °C junction temperature rating support robust operation in automotive under-hood and industrial control environments.

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin surface-mount plastic package: 2.2 mm × 1.35 mm footprint, 0.65 mm pitch, 0.95 mm max height, designed for reflow and wave soldering per JEITA standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN switching applications.

Compared with BC846BPDW1T1G, NHUMH10 reduces bill-of-materials and placement steps but fixes bias ratios; versus NHUMD10, it provides matched NPN behavior essential for dual-sinking topologies in digital logic interfacing.

Availability

NHUMH10 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and consumer appliance control boards requiring stable component supply and AEC-Q101 compliance.

Supply support for NHUMH10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with leadership in automotive-grade components and advanced packaging.

The NHUMH10 belongs to Nexperia's resistor-equipped transistor (RET) product line, engineered specifically to replace discrete BJT+resistor combinations in cost-sensitive, space-constrained digital interface applications across automotive and industrial markets.

FAQ

What is the maximum continuous collector current per transistor in NHUMH10?

The NHUMH10 supports a maximum continuous output current of 100 mA per transistor under Tamb ≤ 25 °C with proper PCB thermal relief. Derating applies above 25 °C ambient: total device power dissipation drops linearly to zero at 150 °C junction temperature, per the 350 mW P_tot limit and 358 K/W R_th(j-a).

Can NHUMH10 be used in place of BC846-based circuits without redesign?

Yes - NHUMH10 replaces two BC846 transistors plus four discrete base resistors (2.2 kΩ and 47 kΩ each) in identical SOT363 footprints. Pin compatibility is maintained, but note that internal resistor values fix VI(on)/VI(off) thresholds; verify logic voltage levels match the 0.81–1.2 V on-threshold before drop-in substitution.

Does NHUMH10 support bidirectional signal routing or analog amplification?

No - NHUMH10 is optimized exclusively for digital switching: its built-in resistors, fixed h_FE minimum, and lack of linear-region characterization preclude use as an analog amplifier or bidirectional interface. It operates strictly as a saturated on/off switch with defined VI(on)/VI(off) windows and 80 V blocking capability.

Is thermal performance affected by using only one transistor while leaving the other idle?

Yes - power dissipation is shared across both transistors and their common die. Even with one channel inactive, the 350 mW total device P_tot limit and thermal resistance values (R_th(j-a) = 358 K/W) apply to the entire package. Idle channel contributes parasitic capacitance and leakage but does not significantly reduce allowable active-channel power.