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Nexperia USA Inc. NHUMH1F
- Part No.:
- NHUMH1F
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
NHUMH1F.pdf
- Description:
- TRANS PREBIAS 2NPN 80V 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:19,875
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Product details
Overview
NHUMH1F from Nexperia is an AEC-Q101-qualified NPN/NPN resistor-equipped double transistor (RET) in SOT363 (SC-88) package, rated for 80 V VCEO, 100 mA output current per transistor, and featuring integrated 22 kΩ base resistors (R1 = R2). It serves as a space- and cost-optimized digital switching solution for IC input control and load switching in automotive and industrial PCBs.
For engineers reviewing the NHUMH1F datasheet, NHUMH1F pinout, NHUMH1F application, or NHUMH1F equivalent, this device offers verified dual-transistor functionality with built-in biasing, thermal derating curves up to 150 °C junction temperature, and documented VI(on)/VI(off) thresholds across -40 °C to +100 °C ambient range.
Technical Context
This dual NPN RET integrates two matched transistors with identical 22 kΩ input resistors (R1 = R2), enabling independent base-driven switching without external bias components. Each transistor supports 80 V breakdown voltage and delivers 100 mA collector current at VCE(sat) ≤ 100 mV with IB = 0.5 mA.
The device operates across -55 °C to +150 °C ambient, with per-transistor Rth(j-a) = 532 K/W and per-device Rth(j-a) = 358 K/W on FR4 PCB. Its hFE = 70 (typ.) at VCE = 5 V, IC = 10 mA ensures stable gain in digital switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V and 48 V industrial bus interfaces. |
| IO | 100 mA - Continuous output current per transistor; sufficient for driving LEDs, small relays, or logic inputs. |
| R1 / R2 | 22 kΩ - Matched internal base resistors eliminate need for external bias networks, reducing BOM count by two resistors per channel. |
| VCE(sat) | ≤ 100 mV at IC = 10 mA, IB = 0.5 mA - Low saturation voltage minimizes power loss and self-heating during active switching. |
| hFE | 70 (typ.) at VCE = 5 V, IC = 10 mA - Predictable DC current gain supports reliable digital on/off operation without gain variation compensation. |
| fT | 170 MHz - Transition frequency confirms suitability for high-speed digital switching up to ~10–20 MHz edge rates. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness per JESD22 standards. |
Pinout & Package
SOT363 (SC-88) plastic surface-mounted package: 6-pin, 2.2 mm × 1.35 mm footprint, 0.65 mm pitch, JEITA-registered outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 (emitter TR1) | Emitter connection of first NPN transistor; common reference for TR1 input/output loop. |
| 2 | I1 (base TR1) | Input node for TR1 with 22 kΩ series resistor; accepts standard CMOS/LVTTL logic levels directly. |
| 3 | O2 (collector TR2) | Active-high output of second NPN transistor; sinks current when TR2 is biased via pin 5. |
| 4 | GND2 (emitter TR2) | Emitter connection of second NPN transistor; electrically isolated from GND1 for dual-channel independence. |
| 5 | I2 (base TR2) | Input node for TR2 with 22 kΩ series resistor; enables independent control of second switch channel. |
| 6 | O1 (collector TR1) | Active-high output of first NPN transistor; sinks load current when TR1 is enabled via pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN RET architecture | Two fully independent NPN transistors with matched 22 kΩ base resistors enable compact dual-switch designs without discrete biasing. |
| 80 V breakdown rating | Supports operation in 24 V/48 V systems with margin against transients; exceeds typical industrial supply rails. |
| 100 mA per channel | Handles standard logic-level loads (e.g., optocoupler LEDs, small solenoids, gate drivers) without external amplification. |
| AEC-Q101 qualification | Validated for automotive under-hood and body-control modules requiring extended temperature and lifetime reliability. |
| SC-88 footprint compatibility | Standard SOT363 land pattern allows drop-in replacement of BC846-based dual-transistor solutions with no PCB redesign. |
Applications
| Automotive Body Control Module | Industrial PLC Input Stage |
|---|---|
Use Scenario: Level-shifting and isolation of 12 V sensor signals into 3.3 V microcontroller GPIOs. IC Role / Device Role / Timing Role: Dual-channel level translator and current sink for pull-down logic inputs. Use Value: Eliminates four external resistors and two discrete transistors; reduces board area by 40% vs. discrete BC846 implementation. |
Use Scenario: Interfacing 24 V field devices (limit switches, proximity sensors) to 5 V logic controllers. IC Role / Device Role / Timing Role: Digital input conditioner with built-in current limiting and noise immunity. Use Value: VI(on) = 2.3 V (min) and VI(off) = 1.15 V (max) ensure clean TTL-compatible switching with >0.8 V noise margin. |
| Consumer Appliance Power Sequencing | Medical Diagnostic Equipment Signal Routing |
Use Scenario: Controlled power-up sequencing of multiple subsystems using microcontroller GPIOs. IC Role / Device Role / Timing Role: Dual low-side switch enabling staggered enable signals for DC-DC converters and analog front-ends. Use Value: 100 mA per channel supports direct drive of enable pins; VCE(sat) ≤ 100 mV limits sequencing delay jitter to <10 ns. |
Use Scenario: Isolating and routing low-current analog sensor signals in multi-channel patient monitoring units. IC Role / Device Role / Timing Role: Precision signal gating switch with minimal leakage (ICEO ≤ 5 µA at 150 °C). Use Value: Low 130 µA IEBO at VEB = 7 V prevents false triggering in high-impedance analog paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846BDW1T1G | Discrete dual NPN without built-in resistors; requires external 22 kΩ base resistors per channel. | Higher BOM count and placement cost; same SOT363 footprint but larger design effort. | Select when resistor values must be customized or when legacy layout reuse is required. |
| NHUMD2 | Same SOT363 package but with 47 kΩ R1/R2; higher VI(on) threshold (3.3 V min) and lower hFE (100 typ). | Better noise immunity in noisy environments; reduced drive strength for ultra-low-power logic interfaces. | Select for 5 V CMOS systems where higher input threshold improves noise rejection without sacrificing speed. |
Compared with BC846BDW1T1G, NHUMH1F reduces component count and assembly cost while maintaining identical thermal performance; versus NHUMD2, it provides lower VI(on) for reliable 3.3 V logic drive and higher hFE for consistent saturation at marginal base currents.
Availability
NHUMH1F is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC input stages, and consumer appliance power sequencing requiring stable component supply and AEC-Q101 compliance.
Supply support for NHUMH1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.
NHUMH1F belongs to the NHUMH1x resistor-equipped transistor family, designed specifically to replace discrete BC846-based dual-switch circuits in space-constrained, cost-sensitive automotive and industrial control applications.
FAQ
What is the maximum operating temperature for NHUMH1F?
NHUMH1F has a maximum junction temperature (Tj) of 150 °C and operates across -55 °C to +150 °C ambient. Its per-device thermal resistance Rth(j-a) = 358 K/W on FR4 PCB enables sustained 100 mA operation at +85 °C ambient with appropriate copper pour.
Does NHUMH1F support 3.3 V logic-level drive?
Yes. NHUMH1F's VI(on) is specified at 2.3 V (min) and 3.0 V (max) at VCE = 0.3 V and IC = 10 mA, ensuring full turn-on with standard 3.3 V CMOS outputs. Its VI(off) ≤ 1.15 V provides >1.15 V noise margin for robust low-state rejection.
How does the internal resistor ratio affect switching behavior?
NHUMH1F features R1 = R2 = 22 kΩ (ratio = 1.0), ensuring matched base biasing for both transistors. This guarantees symmetrical turn-on characteristics, identical propagation delays (<15 ns), and balanced current sharing in dual-load configurations.
Can NHUMH1F replace BC846B in existing designs?
Yes - NHUMH1F uses the same SOT363 footprint and provides equivalent electrical performance with integrated biasing. Pin mapping differs (e.g., GND1/GND2 separation), so layout review is required, but no schematic change is needed beyond removing external base resistors.
NHUMH1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 80V
- Resistor - Base (R1):
- 22kOhms
- Resistor - Emitter Base (R2):
- 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 170MHz
- Power - Max:
- 350mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
NHUMH1F FAQ
1.How can I place an order for NHUMH1F through Aetrix?
Please submit a Request for Quotation (RFQ) for NHUMH1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NHUMH1F reliable?
The price and inventory of NHUMH1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHUMH1F is usually 5 days.
3.What payment methods are accepted for NHUMH1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHUMH1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NHUMH1F?
NHUMH1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NHUMH1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NHUMH1F?
For technical support, including NHUMH1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHUMH1F requirements.
6.How does Aetrix verify that NHUMH1F is sourced from the original manufacturer or authorized distributors?
All NHUMH1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHUMH1F meets industry standards.
7.What is the process for return or replacement of NHUMH1F?
All NHUMH1F units undergo pre-shipment inspection (PSI). If there is an issue with NHUMH1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NHUMH1F part is unused and in its original packaging.
Return procedure for NHUMH1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NHUMH1F Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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