Nexperia USA Inc. NHUMH9X

Overview

NHUMH9X from Nexperia is an NPN/NPN resistor-equipped double transistor (RET) in SOT363 (SC-88) package, rated for 80 V V_CEO, 100 mA output current per transistor, with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It functions as a dual digital switching element for logic-level signal translation and load control in space-constrained PCBs.

For engineers reviewing the NHUMH9X datasheet, NHUMH9X pinout, NHUMH9X application, or NHUMH9X equivalent, this device serves as a drop-in alternative to discrete BJT pairs in automotive body electronics, industrial I/O modules, and low-power microcontroller interface circuits where reduced component count and AEC-Q101 qualification are critical.

Technical Context

This dual NPN RET integrates two matched transistors with dedicated base-emitter resistors on a single die, enabling independent control of each channel without external bias networks. Its 80 V breakdown voltage supports operation across 24 V industrial rails and 12 V automotive systems.

The device features a fixed R2/R1 ratio of 4.7, optimized for reliable saturation at input voltages up to +40 V (VI(on) = 1.6 V typ. at IC = 10 mA), while maintaining VI(off) ≥ 690 mV to ensure robust noise immunity in noisy environments.

Key Specifications

Pinout & Package

SOT363 (SC-88) surface-mount plastic package with 6 leads; 1.3 mm × 2.2 mm footprint; 0.65 mm pitch; 0.95 mm max height; designed for reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN switching applications.

Compared with NHUMH10 and NHUMH13, NHUMH9X provides the highest input voltage tolerance (+40 V) and best noise immunity (VI(off) = 690 mV), making it optimal for automotive and high-noise industrial environments where robustness outweighs raw sensitivity.

Availability

NHUMH9X is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, and medical diagnostic equipment requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for NHUMH9X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance logic, discrete, and MOSFET solutions with focus on efficiency, reliability, and miniaturization for automotive, industrial, and consumer markets.

NHUMH9X belongs to the NHUMH series of resistor-equipped transistors designed specifically for AEC-Q101-compliant digital switching in space-constrained automotive and industrial control applications.

FAQ

What is the maximum allowable continuous collector current per transistor in NHUMH9X?

The absolute maximum continuous collector current per transistor is 100 mA at Tamb ≤ 25 °C, derating linearly to 0 mA at 150 °C junction temperature. This rating assumes mounting on FR4 PCB with single-sided copper and standard footprint per Figure 1 in the datasheet.

Can NHUMH9X be used in place of discrete BC846 transistors?

Yes - NHUMH9X replaces two BC846 transistors plus four bias resistors in digital switching applications. Its integrated R1/R2 network eliminates layout sensitivity and improves consistency, though pinout differs and requires PCB redesign to accommodate SOT363.

Is NHUMH9X suitable for 24 V industrial applications?

Yes - with 80 V V_CEO and AEC-Q101 qualification, NHUMH9X supports 24 V systems including surge transients per IEC 61000-4-4 (electrical fast transient). Derated power dissipation remains sufficient for typical 24 V relay coil or LED driver loads.

What is the thermal resistance from junction to ambient for NHUMH9X?

The per-device thermal resistance from junction to ambient is 358 K/W when mounted on FR4 PCB with single-sided copper and standard footprint. Per-transistor R_th(j-a) is 532 K/W, reflecting shared thermal path between the two die in the SOT363 package.