Nexperia USA Inc. PBLS1501V,115
- Part No.:
- PBLS1501V,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PBLS1501V,115.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:9,565
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Product details
Overview
PBLS1501V,115 from NXP Semiconductors is a dual-function 6-pin SOT666 load switch integrating a low-VCE(sat) PNP BISS transistor (TR1) and an NPN resistor-equipped transistor (TR2) in one monolithic package. It delivers −500 mA DC collector current with 300–500 mΩ equivalent on-resistance at IC = −500 mA/IB = −50 mA, supports ±15 V PNP and +50 V NPN VCEO, and serves as a high-side supply line or LED backlight switch in portable equipment.
For engineers reviewing the PBLS1501V,115 datasheet, PBLS1501V,115 pinout, PBLS1501V,115 application, or PBLS1501V,115 equivalent, this device offers verified low-threshold switching (<1 V), space-saving integration of complementary load-switch functions, and validated thermal resistance of 416 K/W in SOT666 packaging for battery-powered and space-constrained designs.
Technical Context
The PBLS1501V integrates two discrete transistors: TR1 is a PNP BISS (Buried-Intrinsic-Silicon-Structure) transistor optimized for low saturation voltage and high current gain (hFE = 90 at −500 mA), while TR2 is an NPN resistor-equipped transistor with integrated R1 = 2.2 kΩ input bias resistor and R2/R1 = 1.0 ratio for predictable turn-on/off thresholds. Both share a common GND terminal (Pin 4) and operate with independent control paths.
TR1's VCE(sat) reaches −250 mV at −500 mA/−50 mA drive, enabling efficient high-side switching without external base resistors; TR2 provides logic-level compatible VI(on) = 1.6 V and VI(off) = 1.2 V, allowing direct microcontroller GPIO interfacing without level-shifting. The dual-transistor architecture eliminates discrete bias networks and reduces PCB footprint by >40% versus discrete solutions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO (TR1) | −15 V - Enables safe operation in 12 V automotive and industrial supply rails with margin. |
| VCEO (TR2) | +50 V - Supports wide-input LED driver and charger applications up to 48 V systems. |
| RCE(sat) | 300–500 mΩ - Delivers <0.25 V drop at −500 mA, minimizing power loss and thermal rise. |
| IC (TR1) | −500 mA DC - Rated continuous current for high-brightness LED backlights and battery charge path switches. |
| R1 Bias Resistor | 1.54–2.86 kΩ - Integrated precision input resistor enables stable, temperature-compensated switching without external components. |
| Thermal Resistance | 416 K/W - Measured on FR4 board; defines maximum junction temperature rise under 300 mW total dissipation. |
| VI(on)/VI(off) | 1.6 V / 1.2 V - Tight threshold window allows reliable TTL/CMOS-compatible control with noise immunity. |
Pinout & Package
Package: SOT666 - 6-lead plastic surface-mounted package, 1.7 mm × 1.5 mm footprint, 0.65 mm pitch, 0.5 mm height, designed for automated reflow assembly per IEC 60134 standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter (TR1) | High-side load return path; connects to system ground or negative rail in floating-load configurations. |
| 2 | Base (TR1) | Direct drive node for PNP switch; accepts −50 mA max base current to achieve full saturation. |
| 3 | Collector (TR2) | Output node for NPN switch; sinks up to 100 mA load current with <150 mV saturation drop. |
| 4 | GND (TR2 emitter) | Common reference for both transistors; must be connected to system ground for proper biasing. |
| 5 | Base (TR2) | Input node with integrated R1 bias; accepts 0–12 V logic signals directly without external pull-up/down. |
| 6 | Collector (TR1) | Main high-side switch output; connects to positive supply rail and drives loads such as LEDs or charging circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated PNP+NPN pair | Eliminates 4–6 discrete components (transistors, base resistors, pull-downs), reducing BOM count and layout area. |
| Low VCE(sat) BISS structure | −250 mV at −500 mA enables >95% efficiency in 5 V supply-line switching with minimal heatsinking. |
| Logic-level compatible input | VI(on) = 1.6 V ensures reliable turn-on from 1.8 V/3.3 V MCUs without level shifters or additional drivers. |
| Matched R2/R1 ratio | 0.8–1.2 tolerance guarantees consistent VI(on)/VI(off) hysteresis across temperature and process variation. |
| FR4-optimized thermal design | 416 K/W Rth(j-a) allows 300 mW total dissipation at ≤75 °C ambient-sufficient for handheld device operation. |
Applications
| LED Backlight Switching | Battery Charger Path Control |
|---|---|
|
Use Scenario: Driving white LED strings in smartphone or tablet displays requiring precise current regulation and fast on/off transitions. IC Role / Device Role / Timing Role: High-side PNP switch (TR1) controls LED anode connection to battery; NPN (TR2) enables auxiliary monitoring or fault signaling. Use Value: 300 mΩ RCE(sat) limits voltage drop to <0.15 V at 500 mA, preserving display brightness and extending battery runtime. |
Use Scenario: Enabling/disabling charging current path between USB input and Li-ion battery during insertion/removal events. IC Role / Device Role / Timing Role: TR1 acts as main charge-path switch; TR2 provides status feedback to charging controller via open-collector output. Use Value: −15 V VCEO and −500 mA rating support 5 V/2 A USB PD charging with robust overvoltage protection margin. |
| Portable Equipment Supply Switching | High-Side Load Driver for Sensors |
|
Use Scenario: Isolating subsystems (e.g., GPS, Bluetooth) from main battery to reduce standby leakage and enable rapid power cycling. IC Role / Device Role / Timing Role: TR1 functions as controlled high-side rail switch; TR2 implements enable/disable logic with built-in hysteresis. Use Value: Integrated R1 bias and 1.2 V VI(off) ensure clean shutdown with <1 µA leakage, meeting <10 µA system standby targets. |
Use Scenario: Powering analog sensors (e.g., pressure, temperature) requiring clean, switched VCC with minimal noise coupling. IC Role / Device Role / Timing Role: TR1 supplies regulated sensor VCC; TR2 monitors sensor readiness and asserts fault flag on overcurrent. Use Value: 10 pF collector capacitance (TR1) and 2.5 pF (TR2) minimize signal integrity impact on sensitive analog front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-transistor load-switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV11201MT1G | Single NPN RET with 100 mA IO, no PNP section; R1 = 47 kΩ, higher VI(on) = 2.5 V. | Limited to low-current, low-side only switching; cannot replace high-side PNP functionality. | Select only when only NPN switching is required and space constraints allow separate PNP solution. |
| EMH11T2R | Dual NPN RET (no PNP); 100 mA per channel; R1 = 22 kΩ; VCEO = 50 V; no BISS structure. | Cannot perform high-side switching; lacks low-VCE(sat) performance for >200 mA loads. | Use only for dual low-side logic buffering where <100 mA per channel suffices and high-side capability is unnecessary. |
Compared with NSV11201MT1G and EMH11T2R, PBLS1501V,115 uniquely combines high-current PNP BISS switching with integrated NPN logic interface in one SOT666 package-enabling true high-side/low-side co-location, eliminating cross-talk risks, and supporting >500 mA loads with sub-0.3 V drop.
Availability
PBLS1501V,115 is available at Aetrix Electronics and suitable for portable equipment supply switching, LED backlight control, battery charger path management, and high-side sensor powering requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for PBLS1501V,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
PBLS1501V,115 belongs to NXP's BISS transistor and resistor-equipped transistor (RET) product line, engineered specifically for compact, high-efficiency load switching in battery-powered portable electronics with stringent size and thermal constraints.
FAQ
What is the maximum continuous current rating for the PNP transistor (TR1) in PBLS1501V,115?
The PNP transistor TR1 is rated for −500 mA DC collector current under standard FR4 board conditions (Tamb ≤ 25 °C). At this current with −50 mA base drive, it achieves −250 mV VCE(sat) and operates within its 200 mW per-transistor power limit. Derating is required above 25 °C ambient per the 416 K/W thermal resistance specification.
Can PBLS1501V,115 be used as a standalone high-side switch without external components?
Yes-PBLS1501V,115 integrates all necessary biasing for both transistors: TR1 requires only a base drive signal (Pin 2), and TR2's input (Pin 5) includes R1 = 2.2 kΩ, enabling direct connection to 1.8 V–12 V logic sources. No external resistors, capacitors, or level shifters are needed for basic on/off control in typical portable applications.
How does the R2/R1 bias resistor ratio affect switching behavior?
The R2/R1 ratio of 0.8–1.2 sets the internal voltage divider that determines TR2's VI(on) and VI(off) thresholds. A nominal ratio of 1.0 yields VI(on) = 1.6 V and VI(off) = 1.2 V, providing 400 mV hysteresis to reject noise and prevent oscillation during slow-rising or noisy control signals-critical for reliable operation in handheld devices.
Is PBLS1501V,115 pin-compatible with PBLS1501Y,115?
No-PBLS1501V uses SOT666 packaging (1.7 mm × 1.5 mm), while PBLS1501Y uses SOT363 (SC-88, 2.2 mm × 1.8 mm). Although both share identical pin numbering and electrical function, their footprints are mechanically incompatible; PCB layout and stencil design must be revised when substituting between them.
PBLS1501V,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V, 15V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- 2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 1µA, 100nA
- Frequency - Transition:
- 280MHz
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PBLS1501V,115 FAQ
1.How can I place an order for PBLS1501V,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBLS1501V,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBLS1501V,115 reliable?
The price and inventory of PBLS1501V,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBLS1501V,115 is usually 5 days.
3.What payment methods are accepted for PBLS1501V,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBLS1501V,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBLS1501V,115?
PBLS1501V,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBLS1501V,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBLS1501V,115?
For technical support, including PBLS1501V,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBLS1501V,115 requirements.
6.How does Aetrix verify that PBLS1501V,115 is sourced from the original manufacturer or authorized distributors?
All PBLS1501V,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBLS1501V,115 meets industry standards.
7.What is the process for return or replacement of PBLS1501V,115?
All PBLS1501V,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBLS1501V,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBLS1501V,115 part is unused and in its original packaging.
Return procedure for PBLS1501V,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBLS1501V,115 Tags

-
SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

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PUMD2,115
Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

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PUMD12,115
Nexperia USA Inc.

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PUMD9,115
Nexperia USA Inc.

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PUMH9,115
Nexperia USA Inc.

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PUMD3,115
Nexperia USA Inc.

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DCX114EU-7-F
Diodes Incorporated

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PUMD13,115
Nexperia USA Inc.
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