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Nexperia USA Inc. PBLS1501Y,115
- Part No.:
- PBLS1501Y,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PBLS1501Y,115.pdf
- Description:
- NEXPERIA PBLS1501V - 15 V PNP BI
- Quantity:
- Payment:
- Shipping:
Inventory:155,430
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Product details
Overview
PBLS1501Y,115 from NXP Semiconductors is a dual-function discrete load switch combining a low-VCEsat PNP BISS transistor (TR1) and an integrated NPN resistor-equipped transistor (TR2) in a single SOT363 (SC-88) package. It delivers −500 mA DC collector current capability for the PNP switch, 300–500 mΩ equivalent on-resistance at full load, and supports high-side switching for LEDs, battery chargers, and supply lines in portable equipment.
For engineers reviewing the PBLS1501Y,115 datasheet, PBLS1501Y,115 pinout, PBLS1501Y,115 application, or PBLS1501Y,115 equivalent, this device serves as a space-saving, low-drive-power alternative to discrete MOSFET+driver combinations in 15 V-rated high-side load control circuits with tight board-area constraints.
Technical Context
The PBLS1501Y integrates two functionally distinct transistors: TR1 is a −15 V VCEO, −500 mA PNP BISS transistor optimized for low saturation voltage (−250 mV typ. at −500 mA/−50 mA drive); TR2 is a 50 V VCEO, 100 mA NPN RET with built-in R1 = 2.2 kΩ input bias resistor and R2/R1 ratio of 1.0, enabling direct logic-level control without external base resistors.
Its dual-transistor architecture enables coordinated high-side switching: TR1 handles main load current while TR2 acts as a controlled driver stage, reducing total component count and eliminating separate gate/base drive circuitry. Thermal resistance is 416 K/W (junction-to-ambient, free air), consistent with SOT363 package limitations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO (TR1) | −15 V - Enables use in 12 V supply-line switching with 20 % headroom for transients |
| IC (TR1) | −500 mA DC - Supports medium-power LED strings or battery charge path switching |
| RCEsat (TR1) | 300–500 mΩ - Minimizes conduction loss (≤250 mW at full load), critical for thermal management |
| VCEO (TR2) | 50 V - Provides robustness against voltage spikes when driving TR1 base |
| IO (TR2) | 100 mA - Sufficient to deliver −50 mA base drive to TR1 with margin for temperature variation |
| R1 (TR2) | 1.54–2.86 kΩ - Sets logic-compatible input threshold (~1.6 V on-state) for 3.3 V/5 V microcontrollers |
| Ptot (per device) | 300 mW - Limits continuous operation to ≤150 °C junction temperature under standard FR4 layout |
Pinout & Package
SOT363 (SC-88) plastic surface-mounted package, 6-lead, 2.2 mm × 1.8 mm footprint, 0.65 mm pitch; designed for reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 (PNP) | Main load return path; connects to system ground or negative rail |
| 2 | Base of TR1 (PNP) | Driven by TR2 collector; no external base resistor required |
| 3 | Collector of TR2 (NPN) | Output node that sources base current to TR1; electrically isolated from load path |
| 4 | Emiter of TR2 (NPN) | Ground reference for TR2 bias network; common with TR1 emitter (Pin 1) |
| 5 | Base of TR2 (NPN) | Logic input terminal; internal R1 resistor enables direct MCU GPIO connection |
| 6 | Collector of TR1 (PNP) | Main load connection point; high-side switch output referenced to VIN |
Key Features
| Feature | Design Value |
|---|---|
| Integrated PNP + NPN RET pair | Eliminates need for ≥4 discrete components (transistor, base resistor, pull-down, bypass) in high-side switch designs |
| Low VCEsat (−250 mV typ.) | Reduces power dissipation by >40 % vs. standard PNP transistors at −500 mA, easing thermal design |
| Input threshold <1 V | Enables reliable turn-on from 1.8 V logic or weak-signal sources without level-shifting |
| Space-saving SOT363 footprint | Replaces dual-SOT23 solution with 40 % smaller PCB area and single placement step |
| Reduced drive power requirement | TR2's integrated biasing draws only ~1.6 mA at 3.3 V input, lowering MCU I/O loading |
Applications
| LED Backlight Switching | Battery Charger Path Control |
|---|---|
|
Use Scenario: Driving white LED strings in handheld medical monitors requiring precise brightness control and low standby leakage. IC Role / Device Role / Timing Role: High-side current switch controlling LED cathode return path; operates in DC or PWM mode up to 10 kHz. Use Value: 100 nA max ICEO ensures <1 µA standby current, extending battery life; low RCEsat minimizes thermal drift during sustained illumination. |
Use Scenario: Enabling/disabling charging current from USB-PD source to Li-ion cell in ultra-thin tablets. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch isolating charger IC output from battery during fault conditions. Use Value: −15 V VCEO withstands USB-PD 20 V transients; fast turn-off (<1 µs) prevents overvoltage propagation during OVP events. |
| Portable Equipment Supply Line Switch | High-Side Driver for Motor/Relay Loads |
|
Use Scenario: Selecting between primary battery and backup coin cell in GPS trackers operating across −40 °C to +85 °C. IC Role / Device Role / Timing Role: Dual-rail power selector using TR1 as main switch and TR2 for enable logic; operates over full industrial temperature range. Use Value: hFE ≥90 at −500 mA and Tj = 150 °C ensures stable gain across temperature; GND-referenced input simplifies MCU interface. |
Use Scenario: Driving small solenoids (12 V, 300 mA) in smart lock actuators where EMI and board space are constrained. IC Role / Device Role / Timing Role: High-side driver replacing discrete PNP + Zener clamp; provides clean turn-on/turn-off edges without shoot-through risk. Use Value: Low VBEsat (−1.1 V) reduces base drive voltage overhead; integrated R2/R1 ratio stabilizes gain against process variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side discrete load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV1501XV6T1G | Same SOT363 package but uses NPN+NPN configuration; VCEO = 50 V/50 V; RCEsat = 700 mΩ min | Limited to low-voltage (≤5 V) loads due to lack of PNP high-side topology | Prefer PBLS1501Y,115 when switching 12 V rails or requiring negative VCEO rating |
| UMH11NF | Single NPN RET in SOT363; 50 V VCEO, 100 mA IO; no PNP switch stage | Cannot implement true high-side switching-requires external PNP or PMOS for load isolation | Choose PBLS1501Y,115 when integrated high-side capability and reduced BoM count are mandatory |
Compared with NSV1501XV6T1G and UMH11NF, PBLS1501Y,115 uniquely combines −15 V PNP switching with logic-level NPN driver in one die, delivering verified high-side operation, lower on-resistance, and elimination of external base networks-critical for compact, thermally constrained portable systems.
Availability
PBLS1501Y,115 is available at Aetrix Electronics and suitable for portable equipment power management, LED backlight control, and battery charger path switching requiring stable component supply and long-term industrial lifecycle support.
Supply support for PBLS1501Y,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
PBLS1501Y belongs to NXP's BISS transistor family, engineered specifically for high-efficiency, space-constrained high-side load switching in battery-powered and portable electronics.
FAQ
What is the maximum continuous load current supported by PBLS1501Y,115?
The PBLS1501Y,115 supports −500 mA DC collector current for its PNP transistor (TR1) under standard FR4 PCB conditions with 25 °C ambient. At this current, RCEsat remains within 300–500 mΩ, limiting power dissipation to ≤250 mW. Derating is required above 25 °C ambient per the 416 K/W thermal resistance specification.
Can PBLS1501Y,115 be driven directly from a 3.3 V microcontroller GPIO?
Yes. The integrated R1 bias resistor (2.2 kΩ typ.) and TR2's VI(on) of 1.6 V (typ.) allow reliable turn-on from 3.3 V logic without external components. Input current is ~1.5 mA at 3.3 V, well within typical MCU I/O drive capability. No level shifter or pull-up is needed.
How does PBLS1501Y,115 differ from a standard PNP transistor in high-side switching?
Unlike a standalone PNP, PBLS1501Y,115 embeds a dedicated NPN driver (TR2) with matched bias resistors, eliminating external base drive circuitry. Its BISS structure achieves −250 mV VCEsat at −500 mA-nearly 5× lower than conventional PNPs-reducing heat generation and improving efficiency in portable applications.
Is PBLS1501Y,115 suitable for automotive applications?
No. PBLS1501Y,115 is specified for industrial temperature range (−65 °C to +150 °C) but lacks AEC-Q101 qualification, automotive-grade screening, or guaranteed operation under ISO 7637-2 pulse stress. It is intended for consumer and industrial portable equipment-not safety-critical or harsh-environment automotive systems.
PBLS1501Y,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V, 15V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- 2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 1µA, 100nA
- Frequency - Transition:
- 280MHz
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PBLS1501Y,115 FAQ
1.How can I place an order for PBLS1501Y,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBLS1501Y,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBLS1501Y,115 reliable?
The price and inventory of PBLS1501Y,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBLS1501Y,115 is usually 5 days.
3.What payment methods are accepted for PBLS1501Y,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBLS1501Y,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBLS1501Y,115?
PBLS1501Y,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBLS1501Y,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBLS1501Y,115?
For technical support, including PBLS1501Y,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBLS1501Y,115 requirements.
6.How does Aetrix verify that PBLS1501Y,115 is sourced from the original manufacturer or authorized distributors?
All PBLS1501Y,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBLS1501Y,115 meets industry standards.
7.What is the process for return or replacement of PBLS1501Y,115?
All PBLS1501Y,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBLS1501Y,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBLS1501Y,115 part is unused and in its original packaging.
Return procedure for PBLS1501Y,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBLS1501Y,115 Tags
-
SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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