Nexperia USA Inc. PBLS2001D,115

Overview

PBLS2001D,115 from Nexperia is a dual-function SOT457 (SC-74) discrete semiconductor integrating a PNP low-V_CEsat BISS transistor (TR1) and an NPN resistor-equipped transistor (TR2) in one package. It delivers −1 A DC collector current (TR1), 185–280 mΩ R_CEsat at −1 A/−100 mA drive, and 1.54–2.86 kΩ integrated input bias resistor (TR2), enabling high-side load switching in portable equipment and LED backlight control.

For engineers reviewing the PBLS2001D,115 datasheet, PBLS2001D,115 pinout, PBLS2001D,115 application, or PBLS2001D,115 equivalent, key selection criteria include verified dual-transistor topology, confirmed −20 V V_CEO (TR1) and 50 V V_CEO (TR2), measured R_CEsat ≤280 mΩ, validated 6-pin SOT457 package mapping, and documented thermal resistance of 315 K/W (FR4 standard footprint).

Technical Context

The device implements two independent transistor functions on a single die: TR1 is a PNP BISS transistor optimized for low-saturation operation with V_CEsat as low as −185 mV at −1 A/−100 mA, while TR2 is an NPN resistor-equipped transistor (RET) featuring integrated R₁ = 2.2 kΩ (typ) and R₂/R₁ = 1 (typ), eliminating external base resistors for digital logic-level drive.

TR1 supports high-side switching with −20 V V_CEO, −1 A I_C, and f_T = 185 MHz; TR2 provides 100 mA output current, VI(on) = 1.6 V (typ), and VI(off) = 1.2 V (typ), enabling direct interface with 1.8–3.3 V microcontrollers without level-shifting.

Key Specifications

Pinout & Package

Package: SOT457 (SC-74), 6-lead surface-mount plastic package per JEDEC MO-178AB, 3.0 mm × 1.7 mm footprint, 0.95 mm height, 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-transistor load switch applications.

Compared with NSV60301MW6T1G and DMN3020LSD-13, PBLS2001D,115 uniquely integrates both BISS and RET functions with logic-compatible input, eliminating external components while maintaining −20 V/−1 A capability - making it optimal for space-constrained, low-power portable systems requiring zero-bom-count switching.

Availability

PBLS2001D,115 is available at Aetrix Electronics and suitable for LED backlight control, battery charger switching, and portable equipment power sequencing requiring stable component supply across production lifecycles.

Supply support for PBLS2001D,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017, with focus on automotive, industrial, computing, consumer, and wearable markets.

PBLS2001D,115 belongs to Nexperia's BISS+RET dual-transistor product line, engineered specifically for space- and power-constrained portable electronics requiring integrated high-side switching with minimal external components.

FAQ

What is the maximum continuous collector current for the PNP transistor (TR1) in PBLS2001D,115?

The maximum continuous DC collector current for TR1 is −1 A, specified at T_amb ≤25 °C on FR4 PCB with standard footprint. At elevated temperatures or with reduced copper area, derating applies per Figure 1; peak pulse current is −2 A for t_p ≤300 µs.

Does PBLS2001D,115 require external base resistors when used with a 3.3 V microcontroller GPIO?

No. The integrated NPN resistor-equipped transistor (TR2) includes R₁ = 2.2 kΩ (typ) and R₂/R₁ = 1 (typ), enabling direct connection to 3.3 V GPIO. VI(on) = 1.6 V (typ) ensures reliable turn-on, and VI(off) = 1.2 V (typ) guarantees clean turn-off without floating inputs.

Can PBLS2001D,115 be used in high-side switch configurations with 12 V supply rails?

Yes. TR1 has −20 V V_CEO and −20 V V_CBO, making it suitable for 12 V systems with margin for transients. Its −1 A I_C rating and 185–280 mΩ R_CEsat support robust operation in automotive accessory and industrial 12 V supply-line switching applications.

What is the thermal resistance from junction to ambient (R_th(j-a)) for PBLS2001D,115 under standard mounting conditions?

R_th(j-a) is 315 K/W when mounted on FR4 PCB with single-sided copper, tin-plated, and standard footprint (Table 6, condition [1]). With 1 cm² collector pad, it improves to 236 K/W; on ceramic Al₂O₃, it reaches 210 K/W - enabling higher power handling in thermally optimized layouts.