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Nexperia USA Inc. PBLS2004D,115

Part No.:
PBLS2004D,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SC-74, SOT-457
Datasheet:
AetrixPBLS2004D,115.pdf
Description:
TRANS PREBIAS 1NPN 1PNP 6TSOP
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,043

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Product details

Overview

PBLS2004D,115 from NXP Semiconductors (formerly Philips Semiconductors) is a dual-function SOT457-packaged discrete device integrating a PNP low-VCEsat Breakthrough in Small Signal (BISS) transistor and an NPN resistor-equipped transistor (RET). It delivers −1 A DC collector current (TR1), 185–280 mΩ RCEsat at −1 A/−100 mA drive, and built-in bias resistors (R1 = 22 kΩ typ, R2/R1 = 1.0). It serves as a high-side load switch in portable equipment power rails and LED backlight control.

For engineers reviewing the PBLS2004D,115 datasheet, PBLS2004D,115 pinout, PBLS2004D,115 application, or PBLS2004D,115 equivalent, key selection criteria include verified dual-transistor integration, guaranteed RCEsat ≤ 280 mΩ under −1 A load, confirmed 6-pin SOT457 footprint, and documented thermal resistance of 236 K/W on FR4 with collector pad - all critical for compact battery-powered load switching designs.

Technical Context

The PBLS2004D integrates two functionally independent transistors: TR1 is a PNP BISS device optimized for low-saturation operation (VCEsat = −185 to −280 mV at −1 A/−100 mA), while TR2 is an NPN RET with integrated input bias network (R1 = 15.4–28.6 kΩ, R2/R1 = 0.8–1.2). Both share thermally coupled die but operate with separate electrical paths and distinct absolute maximum ratings: TR1 supports −20 V VCEO, TR2 supports +50 V VCEO.

Switching performance is characterized with defined test conditions: td = 8 ns, tr = 34 ns, toff = 185 ns at −1 A load and −50 mA base drive. Thermal design must account for per-device Ptot limits: 350 mW (FR4 standard), 400 mW (FR4 with 1 cm² collector pad), or 600 mW (ceramic Al₂O₃).

Key Specifications

Parameter Value and Actual Design Meaning
VCEO (TR1) −20 V: Maximum safe blocking voltage for PNP high-side switch in 12 V systems with margin.
VCEO (TR2) +50 V: Enables NPN RET use in 24 V logic-level interface or level-shifting applications.
RCEsat (TR1) 185–280 mΩ at −1 A/−100 mA: Directly determines I²R conduction loss (≤ 280 mW at 1 A), critical for thermal management.
R1 (TR2) 22 kΩ typical (15.4–28.6 kΩ): Sets input current threshold (~114 µA at 2.5 V), enabling direct MCU GPIO drive without external resistor.
hFE (TR1) 155–220 at −1 A/−100 mA: Confirms sufficient current gain for reliable saturation under full load without excessive base drive.
toff 185 ns: Fast turn-off enables PWM dimming up to ~500 kHz in LED backlight drivers.
Ptot (FR4 w/ pad) 400 mW: Defines maximum continuous power dissipation with standard PCB layout enhancement.

Pinout & Package

SOT457 (SC-74) 6-lead surface-mount plastic package: 3.0 mm × 2.5 mm × 1.3 mm body, 0.95 mm pin pitch, gull-wing leads. Pin 1 index located at top-left corner when marking side faces up and notch/polarity indicator oriented left.

Pin/Terminal Circuit Role Design Meaning
1 Emitter (TR1) Main current return path for PNP BISS switch; connects to system ground or low-side reference.
2 Base (TR1) Control input for PNP switch; requires negative current injection (e.g., via NPN driver or MCU pull-down).
3 Collector (TR2) Output node of NPN RET; sinks up to 100 mA load current when TR2 is active.
4 Emitter (TR2) Ground reference for NPN RET; electrically isolated from TR1 emitter unless externally connected.
5 Base (TR2) Input node of NPN RET; internally biased via R1/R2 network - accepts 0–40 V logic signals.
6 Collector (TR1) High-side switched output; connects to battery or supply rail and drives load toward emitter (pin 1).

Key Features

Feature Design Value
Dual-transistor integration Single SOT457 package replaces discrete PNP switch + NPN driver + 3 bias resistors, reducing board area by >40%.
Low VCEsat BISS architecture −185 mV typical saturation voltage at −1 A enables < 200 mW conduction loss, critical for thermal integrity in space-constrained portable devices.
Integrated RET bias network R1 = 22 kΩ ±29%, R2/R1 = 1.0 ±20% eliminates external components for NPN logic-level interface, simplifying GPIO-driven control.
Low threshold voltage vs. MOSFET VBEon = −0.85 to −1.1 V allows direct drive from 1.8 V or 2.5 V logic without level shifters - unlike most MOSFETs requiring ≥3 V VGS(th).
Space-saving solution 3.0 × 2.5 mm footprint occupies 7.5 mm², less than half the area of two discrete SOT23 devices plus passives.

Applications

Battery Charger Switch LED Backlight High-Side Control

Use Scenario: Switching charging current path between USB input and battery during charge/discharge cycles in smartphones and wearables.

IC Role / Device Role / Timing Role: PBLS2004D,115 acts as a PNP-based high-side load switch (TR1) controlling battery connection, while TR2 provides status feedback or auxiliary control.

Use Value: RCEsat ≤ 280 mΩ ensures < 280 mW loss at 1 A charge current, minimizing thermal rise in sealed enclosures.

Use Scenario: Driving white LED strings in LCD displays of tablets and portable medical monitors.

IC Role / Device Role / Timing Role: TR1 functions as high-side PWM-controlled current source; TR2 interfaces with brightness controller IC or microcontroller.

Use Value: 185 ns toff supports 5 kHz+ PWM dimming without visible flicker, meeting display quality requirements.

Portable Equipment Power Rail Switch Supply Line Protection Switch

Use Scenario: Enabling/disabling subsystem power (e.g., GPS, Bluetooth radio) in handheld industrial scanners and IoT sensors.

IC Role / Device Role / Timing Role: PBLS2004D,115 TR1 serves as low-loss enable switch; TR2 provides fault indication or sequencing control.

Use Value: −20 V VCEO rating accommodates 12 V nominal rails with 66% safety margin against transients.

Use Scenario: Isolating downstream circuitry during overcurrent or thermal fault conditions in USB-C PD adapters.

IC Role / Device Role / Timing Role: TR1 operates as protected high-side disconnect; TR2 drives fault latch or communication line to host controller.

Use Value: Integrated bias resistors allow immediate fault response without external timing components, reducing BOM count by 3 parts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-transistor load switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
NSBC114EDXV6T1G Single NPN RET only (no PNP BISS); R1 = 100 kΩ, max IO = 100 mA; no high-side switching capability. Limited to low-side switching or signal conditioning; cannot replace PBLS2004D,115 in high-side battery or supply rail roles. Select only if design requires only NPN logic-level interface with no high-voltage/high-current PNP switching.
DMN3028LSD-13 Single N-channel MOSFET; 30 V VDS, 6.5 mΩ RDS(on); requires ≥3 V gate drive; no integrated bias network. Superior conduction efficiency but needs external level shifter for 1.8 V logic; lacks integrated RET functionality for auxiliary control. Choose when ultra-low RDS(on) is mandatory and board space allows added level-shifting components.

Compared with NSBC114EDXV6T1G and DMN3028LSD-13, PBLS2004D,115 uniquely combines high-side PNP switching with NPN RET logic interface in one package - eliminating four external components while supporting 1 A loads and 1.8 V logic compatibility, making it optimal for tightly integrated portable power architectures.

Availability

PBLS2004D,115 is available at Aetrix Electronics and suitable for battery charger switches, LED backlight high-side control, and portable equipment power rail switching requiring stable component supply across production lifecycles.

Supply support for PBLS2004D,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering analog and discrete transistor development.

PBLS2004D,115 belongs to NXP's legacy BISS/RET discrete portfolio, designed specifically for space-constrained portable electronics requiring integrated high-side switching and logic-compatible interface in minimal footprint.

FAQ

What is the maximum continuous current the PBLS2004D,115 can switch in high-side configuration?

The PBLS2004D,115 PNP BISS transistor (TR1) supports −1 A DC collector current at Tamb ≤ 25 °C with appropriate PCB copper area. At higher ambient temperatures or reduced copper, derating applies: e.g., 500 mA at 70 °C ambient with standard FR4 layout. Peak pulsed current is −2 A for ≤300 µs pulses.

Can the NPN RET section (TR2) drive a 10 kΩ load directly?

Yes - TR2 delivers up to 100 mA output current and supports VI(off) ≤ 0.8 V and VI(on) ≥ 1.7 V, enabling direct interfacing with 3.3 V or 5 V logic inputs. With its internal R1/R2 network, it sinks current into a 10 kΩ pull-up without external components, providing clean digital-level signaling.

Is the PBLS2004D,115 RoHS compliant and halogen-free?

Yes - PBLS2004D,115 conforms to EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The SOT457 package uses lead-free matte tin plating, and material declarations confirm absence of brominated flame retardants and chlorine-based compounds.

How does thermal performance differ between FR4 and ceramic PCB mounting?

On FR4 with 1 cm² collector pad, Rth(j-a) is 236 K/W (Ptot = 400 mW); on Al₂O₃ ceramic, it improves to 210 K/W (Ptot = 600 mW). This 26 K/W reduction lowers junction temperature by ~10.5 °C at 400 mW dissipation - critical for sustained 1 A operation in thermally demanding environments.

PBLS2004D,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):
100mA, 1A
Voltage - Collector Emitter Breakdown (Max):
50V, 20V
Resistor - Base (R1):
22kOhms
Resistor - Emitter Base (R2):
22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 5V / 220 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
Current - Collector Cutoff (Max):
1µA, 100nA
Frequency - Transition:
185MHz
Power - Max:
600mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

PBLS2004D,115 FAQ

1.How can I place an order for PBLS2004D,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBLS2004D,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBLS2004D,115 reliable?

The price and inventory of PBLS2004D,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBLS2004D,115 is usually 5 days.

3.What payment methods are accepted for PBLS2004D,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBLS2004D,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBLS2004D,115?

PBLS2004D,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBLS2004D,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBLS2004D,115?

For technical support, including PBLS2004D,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBLS2004D,115 requirements.

6.How does Aetrix verify that PBLS2004D,115 is sourced from the original manufacturer or authorized distributors?

All PBLS2004D,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBLS2004D,115 meets industry standards.

7.What is the process for return or replacement of PBLS2004D,115?

All PBLS2004D,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBLS2004D,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBLS2004D,115 part is unused and in its original packaging.

Return procedure for PBLS2004D,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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