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Nexperia USA Inc. PBLS4001Y,115
- Part No.:
- PBLS4001Y,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PBLS4001Y,115.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,978
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Product details
Overview
PBLS4001Y,115 from Nexperia is a dual-function SOT363-packaged discrete device integrating a PNP low-VCEsat Breakthrough In Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET) in one monolithic package. It delivers −40 V VCEO (TR1), 50 V VCEO (TR2), 440–700 mΩ RCEsat at −500 mA, 1.54–2.86 kΩ input bias resistor (R1), and 0.8–1.2 R2/R1 ratio - enabling compact high-side load switching in portable power rails and LED backlight control.
For engineers reviewing the PBLS4001Y,115 datasheet, PBLS4001Y,115 pinout, PBLS4001Y,115 application, or PBLS4001Y,115 equivalent, this dual-transistor solution supports space-constrained designs requiring low-threshold (<1 V) drive, reduced component count, and simultaneous PNP loadswitch + NPN logic-level interface functionality.
Technical Context
The PBLS4001Y,115 integrates two electrically isolated transistors on a single die: TR1 is a PNP BISS transistor optimized for low-saturation operation with VBEsat = −1.2 V and RCEsat as low as 440 mΩ at −500 mA/−50 mA drive; TR2 is an NPN RET with integrated R1 (2.2 kΩ typ.) and R2 (2.2 kΩ × 1.0 ratio), enabling direct microcontroller GPIO interfacing without external biasing.
Both transistors share thermal coupling but operate independently: TR1 handles up to −500 mA collector current with −40 V VCEO, while TR2 supports 100 mA output current with 50 V VCEO and VI(on)/VI(off) thresholds of 1.6 V and 1.2 V respectively - making it suitable for level-shifted enable/control signaling in mixed-voltage systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO (TR1) | −40 V - Enables safe operation in 24 V automotive or industrial supply-line switching applications. |
| VCEO (TR2) | 50 V - Supports 3.3 V/5 V logic control of higher-voltage loads up to 30 V. |
| RCEsat (TR1) | 440–700 mΩ at −500 mA/−50 mA - Delivers <0.35 V saturation drop, minimizing power loss in battery-powered high-side switches. |
| R1 (TR2) | 1.54–2.86 kΩ - Sets precise base current for reliable turn-on with standard MCU outputs (e.g., 3.3 V GPIO). |
| R2/R1 ratio | 0.8–1.2 - Ensures consistent current gain and predictable VI(on)/VI(off) hysteresis across process variation. |
| Ptot (per device) | 300 mW - Allows continuous operation at full rated current with minimal heatsinking on FR4 PCBs. |
| fT | 100–300 MHz - Supports fast switching (>1 MHz) in PWM-driven LED dimming or DC-DC enable circuits. |
Pinout & Package
SOT363 (SC-88) 6-pin plastic surface-mounted package with standard footprint and reflow-compatible construction; thermal resistance Rth(j-a) = 416 K/W in free air.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter (TR1) | Low-impedance return path for PNP load current; connects to system ground or negative rail in high-side configuration. |
| 2 | Base (TR1) | Control input for PNP BISS switch; driven low (relative to emitter) to activate load path. |
| 3 | Collector (TR2) | Output node for NPN RET; sinks up to 100 mA when enabled, used for logic-level signal inversion or gate driving. |
| 4 | Emiter (TR2) | Ground reference for RET section; internally tied to pin 1 in some variants but electrically isolated here per datasheet pinning. |
| 5 | Base (TR2) | Input node for RET; accepts 0–12 V logic signals directly due to integrated R1/R2 bias network. |
| 6 | Collector (TR1) | Main load connection for PNP switch; connects to positive supply rail in high-side switch topology. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated PNP BISS + NPN RET | Eliminates need for separate bias resistors and discrete transistors, reducing board area by >40% vs. discrete solutions. |
| Low VCEsat (TR1) | −350 mV at −500 mA enables <0.2 W conduction loss in 1 A load-switching applications. |
| Logic-compatible input (TR2) | VI(on) = 1.6 V max ensures robust turn-on from 3.3 V MCUs without level-shifting circuitry. |
| Space-saving SOT363 | 2.2 mm × 1.35 mm footprint fits dense portable PCB layouts where height and area are constrained. |
| Thermal robustness | 150 °C max junction temperature and 416 K/W Rth(j-a) support continuous operation in handheld devices up to 70 °C ambient. |
Applications
| Portable Battery Charger Control | LED Backlight High-Side Switch |
|---|---|
|
Use Scenario: Managing charging path selection between USB and wall adapter inputs in smartphones and tablets. IC Role / Device Role / Timing Role: PNP TR1 acts as bidirectional high-side load switch; TR2 provides status feedback to PMIC via open-collector output. Use Value: Low RCEsat minimizes voltage drop across charging FET driver, preserving battery efficiency during CC/CV stages. |
Use Scenario: Enabling/disabling white LED strings in LCD displays using 3.3 V microcontroller GPIO. IC Role / Device Role / Timing Role: TR1 switches 24 V backlight rail; TR2 converts MCU PWM signal to compatible gate drive for external MOSFET. Use Value: Integrated R1/R2 eliminates external pull-up/pull-down resistors, reducing BOM count and layout complexity. |
| Industrial Sensor Power Gating | Automotive Interior Lighting Sequencing |
|
Use Scenario: Isolating 12 V sensor modules during sleep mode to meet ultra-low quiescent current requirements. IC Role / Device Role / Timing Role: TR1 serves as always-off high-side disconnect switch; TR2 monitors enable line integrity with hysteresis. Use Value: VI(off) ≤ 0.5 V ensures clean turn-off even with noisy 12 V supply lines, preventing false wake-ups. |
Use Scenario: Controlling sequential activation of dome lights and map lamps in vehicle cabin modules. IC Role / Device Role / Timing Role: TR1 drives individual lamp strings; TR2 interfaces with LIN bus transceiver for diagnostic reporting. Use Value: −40 V VCEO withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a (−100 V peak). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-transistor loadswitch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSBC114YDXV6T1G | Single NPN RET only; no integrated PNP BISS section; 100 mA IO rating same, but lacks −500 mA high-current switching capability. | Requires external PNP stage for high-side switching - increases board area and component count. | Select when only logic-level signal conditioning is needed and high-current load control is handled elsewhere. |
| DMN3028LSD-13 | Single-channel 30 V N-channel MOSFET with 28 mΩ RDS(on); no integrated biasing or bipolar functionality. | Cannot replace TR2's resistor-equipped logic interface; requires gate driver and level shifter for 3.3 V MCU control. | Choose for lower RDS(on) in high-efficiency DC-DC hot-swap applications where bipolar characteristics are unnecessary. |
Compared with NSBC114YDXV6T1G and DMN3028LSD-13, the PBLS4001Y,115 uniquely combines high-current PNP switching with logic-compatible NPN RET in one package - delivering net BOM reduction, smaller footprint, and simplified drive architecture for portable and automotive power management.
Availability
PBLS4001Y,115 is available at Aetrix Electronics and suitable for portable equipment, battery charger switches, and high-side LED drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PBLS4001Y,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
The PBLS4001Y,115 belongs to Nexperia's BISS+RET dual-transistor product line, designed specifically to reduce component count and PCB area in portable and battery-powered power management systems.
FAQ
What is the maximum continuous collector current for the PNP transistor (TR1) in PBLS4001Y,115?
The PNP BISS transistor (TR1) supports −500 mA continuous collector current at Tamb ≤ 25 °C, with −1 A peak (tp ≤ 1 ms) capability. Derating applies above 25 °C ambient per the 200 mW per-transistor power limit and 416 K/W thermal resistance.
Can PBLS4001Y,115 be used as a level shifter between 3.3 V and 24 V domains?
Yes: TR2's VI(on) of 1.6 V max and VI(off) of 1.2 V min allow clean switching with 3.3 V GPIO, while TR1's −40 V VCEO safely isolates 24 V loads. The integrated R1/R2 network eliminates external bias components required in discrete level-shifter designs.
Is pin 4 (emitter TR2) internally connected to pin 1 (emitter TR1)?
No - per the official Nexperia pinning diagram and package outline, pins 1 and 4 are electrically isolated terminals serving separate transistors. Pin 1 is TR1 emitter; pin 4 is TR2 emitter. They must be routed independently unless externally tied by the designer for specific biasing schemes.
What is the recommended soldering method for PBLS4001Y,115?
Reflow soldering is the only recommended method per Nexperia's datasheet. Wave or hand soldering is not advised due to thermal stress risks on the SOT363 package. Peak reflow temperature must not exceed 260 °C for ≤ 10 s, consistent with JEDEC J-STD-020 moisture sensitivity level 1.
PBLS4001Y,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V, 40V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- 2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 300MHz
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
PBLS4001Y,115 FAQ
1.How can I place an order for PBLS4001Y,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBLS4001Y,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBLS4001Y,115 reliable?
The price and inventory of PBLS4001Y,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBLS4001Y,115 is usually 5 days.
3.What payment methods are accepted for PBLS4001Y,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBLS4001Y,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBLS4001Y,115?
PBLS4001Y,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBLS4001Y,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBLS4001Y,115?
For technical support, including PBLS4001Y,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBLS4001Y,115 requirements.
6.How does Aetrix verify that PBLS4001Y,115 is sourced from the original manufacturer or authorized distributors?
All PBLS4001Y,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBLS4001Y,115 meets industry standards.
7.What is the process for return or replacement of PBLS4001Y,115?
All PBLS4001Y,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBLS4001Y,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBLS4001Y,115 part is unused and in its original packaging.
Return procedure for PBLS4001Y,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBLS4001Y,115 Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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