NXP Semiconductors PBLS4004Y,115
- Part No.:
- PBLS4004Y,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
PBLS4004Y,115.pdf
- Description:
- NEXPERIA PBLS4004Y - SMALL SIGNA
- Quantity:
- Payment:

- Shipping:

Inventory:72,000
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Product details
Overview
PBLS4004Y,115 from Nexperia is a dual-function discrete semiconductor combining a PNP low-VCEsat Breakthrough In Small Signal (BISS) transistor and an NPN resistor-equipped transistor (RET) in a single SOT363 (SC-88) package. It delivers −40 V VCEO (TR1), 50 V VCEO (TR2), 440–700 mΩ RCEsat at −500 mA, 15.4–28.6 kΩ integrated R1, and operates as a high-side load switch for portable power management.
For engineers reviewing the PBLS4004Y,115 datasheet, PBLS4004Y,115 pinout, PBLS4004Y,115 application, or PBLS4004Y,115 equivalent, this device supports compact, low-drive-power switching in battery-powered systems where space, thermal efficiency, and component count reduction are critical design constraints.
Technical Context
The PBLS4004Y integrates two functionally independent transistors: TR1 is a PNP BISS device optimized for low-saturation voltage switching with hFE = 40 at −500 mA and VBEsat = −1.2 V; TR2 is an NPN RET with built-in 15.4–28.6 kΩ input bias resistor (R1) and R2/R1 = 0.8–1.2 ratio, enabling direct logic-level drive without external components.
Both transistors share thermal coupling on a common die but operate electrically isolated-TR1 handles high-side load switching up to −500 mA, while TR2 serves as a controlled driver stage with VI(on) = 1.7–2.5 V and VI(off) = 0.8–1.1 V, supporting TTL/CMOS-compatible control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO (TR1) | −40 V - Enables safe operation in 24 V automotive and industrial supply rails with margin |
| VCEO (TR2) | 50 V - Supports 3.3 V/5 V logic-controlled switching of higher-voltage loads |
| RCEsat (TR1) | 440–700 mΩ at −500 mA - Minimizes conduction loss and self-heating in high-current load paths |
| R1 (TR2) | 15.4–28.6 kΩ - Sets precise base current for predictable turn-on without external resistor |
| VI(on) / VI(off) | 1.7–2.5 V / 0.8–1.1 V - Ensures robust logic-level compatibility across temperature and process variation |
| Ptot (per device) | 300 mW - Allows continuous operation up to 150 °C junction temperature on standard FR4 PCB |
Pinout & Package
Package: SOT363 (SC-88), 6-pin plastic surface-mounted package, 2.2 mm × 1.35 mm footprint, 0.65 mm pitch, rated for reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter (TR1) | Common emitter connection for PNP BISS switch; ties to system ground or return path |
| 2 | Base (TR1) | Control input for PNP transistor; driven low to enable high-side load conduction |
| 3 | Collector (TR2) | Output node for NPN RET; connects to TR1 base to form cascaded driver stage |
| 4 | Emitter (TR2) | Ground reference for NPN RET; internally tied to Pin 1 in monolithic layout |
| 5 | Base (TR2) | Logic input terminal with integrated R1; accepts 0–40 V drive with internal current limiting |
| 6 | Collector (TR1) | Main high-side switch output; connects to load and supply rail (e.g., battery +) |
Key Features
| Feature | Design Value |
|---|---|
| Integrated dual-transistor topology | Eliminates need for discrete driver + switch pair, reducing BOM count by ≥2 components |
| Low VCEsat (TR1) | −350 mV at −500 mA enables <175 mW conduction loss-critical for thermal-limited portable designs |
| Logic-compatible input (TR2) | VI(on) ≤2.5 V allows direct interface with 3.3 V microcontrollers without level-shifting circuitry |
| Thermal resistance (Rth(j-a)) | 416 K/W in free air ensures stable operation up to 150 °C junction temperature on standard PCB |
Applications
| Smartphone Battery Charging Switch | Automotive LED Backlight Driver |
|---|---|
|
Use Scenario: Selective routing of charging current between USB and wall adapter inputs in dual-path battery management ICs. IC Role / Device Role / Timing Role: High-side load switch controlling charge path selection with fast turn-on/off response. Use Value: Low RCEsat minimizes voltage drop and heat generation during 500 mA charging, extending battery life and reducing thermal derating. |
Use Scenario: PWM-controlled current regulation for instrument cluster backlight LEDs in 12 V automotive systems. IC Role / Device Role / Timing Role: High-side current sink driver enabling precise dimming via microcontroller GPIO. Use Value: Integrated R1 eliminates external bias resistor, saving board area and improving EMI immunity in noisy vehicle environments. |
| Industrial Sensor Power Gating | Wearable Health Monitor Supply Control |
|
Use Scenario: On-demand power enable for low-power MEMS sensors during wake-up cycles in IIoT edge nodes. IC Role / Device Role / Timing Role: Low-quiescent-current load switch activated by MCU GPIO to gate sensor VDD. Use Value: VI(off) ≤1.1 V ensures reliable turn-off under brown-out conditions, preventing false wake-ups and leakage-induced battery drain. |
Use Scenario: Isolation of ECG front-end analog circuitry from digital subsystems during sleep mode in patch-style monitors. IC Role / Device Role / Timing Role: Dual-stage switch providing both logic-level control (TR2) and low-loss power path (TR1). Use Value: Compact SOT363 footprint fits tight wearable PCB layouts while maintaining <100 nA off-state leakage for multi-week battery runtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-transistor load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV40201MR6T1G | Single PNP BISS only (no integrated RET); requires external base resistor; VCEO = −40 V, RCEsat = 500 mΩ | Lacks logic-level input stage-needs additional driver circuit for MCU compatibility | Choose when cost sensitivity outweighs board space savings and design simplicity |
| EMX16T2R | PNP+NPN pair in SOT-563; no integrated resistors; VCEO = −50 V / 50 V; RCEsat = 600 mΩ | Requires full external bias network; higher pin count increases routing complexity | Prefer when higher voltage rating or separate transistor optimization is required |
Compared with NSV40201MR6T1G and EMX16T2R, PBLS4004Y,115 uniquely integrates both switching and drive functions in one SC-88 package, reducing layout area by >30% and eliminating three passive components-ideal for space-constrained, low-power portable designs.
Availability
PBLS4004Y,115 is available at Aetrix Electronics and suitable for smartphone battery charging switches, automotive LED backlight drivers, industrial sensor power gating, and wearable health monitor supply control requiring stable component supply and long-term production continuity.
Supply support for PBLS4004Y,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.
PBLS4004Y belongs to Nexperia's BISS+RET dual-transistor product line, engineered specifically to replace discrete transistor-resistor combinations in compact, low-power load-switching applications.
FAQ
What is the maximum continuous collector current for TR1?
TR1 supports −500 mA continuous collector current at Tamb ≤ 25 °C with derating above that temperature. The absolute maximum peak current is −1 A for pulses ≤1 ms. This rating is validated per IEC 60134 limiting values and assumes mounting on FR4 PCB with single-sided copper and standard footprint.
Can PBLS4004Y,115 be used with 1.8 V logic controllers?
Yes-TR2's VI(on) is specified down to 1.7 V (typical) at 5 mA output, ensuring reliable turn-on with 1.8 V GPIOs across temperature and process corners. VI(off) remains ≤1.1 V, guaranteeing full turn-off even with weak pull-downs or noise margins.
Is the thermal resistance value measured on bare board or with heatsinking?
Rth(j-a) = 416 K/W is measured on a standard FR4 PCB with single-sided copper, tin-plated, and the manufacturer's recommended footprint-no external heatsink or thermal vias. This reflects real-world performance in typical handheld and portable layouts.
How does the R2/R1 ratio affect switching behavior?
The R2/R1 ratio of 0.8–1.2 sets the internal feedback divider for TR2's base-emitter junction, stabilizing gain and improving saturation consistency across temperature. It does not impact external drive requirements but ensures predictable hFE and VCEsat in the RET stage.
PBLS4004Y,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V, 40V
- Resistor - Base (R1):
- 22kOhms
- Resistor - Emitter Base (R2):
- 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 5mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 300MHz
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
PBLS4004Y,115 FAQ
1.How can I place an order for PBLS4004Y,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBLS4004Y,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBLS4004Y,115 reliable?
The price and inventory of PBLS4004Y,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBLS4004Y,115 is usually 5 days.
3.What payment methods are accepted for PBLS4004Y,115?
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PBLS4004Y,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBLS4004Y,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBLS4004Y,115?
For technical support, including PBLS4004Y,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBLS4004Y,115 requirements.
6.How does Aetrix verify that PBLS4004Y,115 is sourced from the original manufacturer or authorized distributors?
All PBLS4004Y,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBLS4004Y,115 meets industry standards.
7.What is the process for return or replacement of PBLS4004Y,115?
All PBLS4004Y,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBLS4004Y,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBLS4004Y,115 part is unused and in its original packaging.
Return procedure for PBLS4004Y,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBLS4004Y,115 Tags

-
SMUN5311DW1T1G
onsemi

-
UMH9NTN
Rohm Semiconductor

-
PUMH13,115
Nexperia USA Inc.

-
PUMD3-QX
Nexperia USA Inc.

-
PUMD2,115
Nexperia USA Inc.

-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage

-
PUMD12,115
Nexperia USA Inc.

-
PUMD9,115
Nexperia USA Inc.

-
PUMH9,115
Nexperia USA Inc.

-
PUMD3,115
Nexperia USA Inc.

-
DCX114EU-7-F
Diodes Incorporated

-
PUMD13,115
Nexperia USA Inc.
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