Nexperia USA Inc. PBLS4005Y,115

Overview

PBLS4005Y,115 from NXP Semiconductors is a dual-function SOT363-packaged discrete device integrating a PNP low-V_CEsat Breakthrough In Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET) in one monolithic package. It delivers −40 V V_CEO (TR1), 500 mA max collector current (TR1), 440–700 mΩ R_CEsat at −500 mA/−50 mA, 33–61 kΩ integrated R₁, and 0.8–1.2 R₂/R₁ ratio - enabling compact high-side load switching in portable battery-powered systems.

For engineers reviewing the PBLS4005Y,115 datasheet, PBLS4005Y,115 pinout, PBLS4005Y,115 application, or PBLS4005Y,115 equivalent, key selection criteria include verified dual-transistor topology, confirmed SOT363 (SC-88) package mapping, validated 6-pin functional pinout with isolated TR1/TR2 bias paths, and documented low-threshold (<1 V) drive capability for space-constrained DC power path control.

Technical Context

This device implements two independent transistor functions on a single die: TR1 is a PNP BISS transistor optimized for low-saturation-voltage high-current switching (V_CEsat ≤ −350 mV at −500 mA), while TR2 is an NPN RET with built-in base bias resistors (R₁ = 33–61 kΩ, R₂/R₁ = 0.8–1.2) enabling direct logic-level control without external components.

The TR1 emitter connects to Pin 1, base to Pin 2, and collector to Pin 6; TR2 emitter (GND) is Pin 4, base (input) is Pin 5, and collector (output) is Pin 3 - establishing galvanically separated signal and power paths with shared thermal substrate. Both transistors share a common 300 mW total power dissipation limit at T_amb ≤ 25 °C.

Key Specifications

Pinout & Package

SOT363 (SC-88) plastic surface-mounted package, 6-lead, 2.2 mm × 1.35 mm footprint, 0.65 mm pitch, 0.95 mm max height - compatible with standard reflow soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-transistor load-switch applications.

Compared with NSBC114EDXV6T1G and EMH3M, PBLS4005Y,115 uniquely integrates both high-side BISS switching and logic-level NPN RET functionality with factory-trimmed bias resistors - delivering verified 440–700 mΩ R_CEsat and 1.6–3.0 V V_I(on) in a single component, reducing layout complexity and qualification effort for portable power path designs.

Availability

PBLS4005Y,115 is available at Aetrix Electronics and suitable for supply line switching, battery charger control, LED backlight driving, and portable equipment power management requiring stable component supply across extended production lifecycles.

Supply support for PBLS4005Y,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, IoT, and mobile applications.

PBLS4005Y,115 belongs to NXP's BISS+RET dual-transistor product line, designed specifically to replace multi-component discrete solutions in space- and power-constrained portable electronics with certified low-V_CEsat and integrated biasing.

FAQ

What is the maximum continuous current rating for the PNP BISS transistor (TR1) in PBLS4005Y,115?

The TR1 PNP BISS transistor is rated for −500 mA continuous collector current under standard FR4 PCB mounting conditions (single-sided copper, 25 °C ambient). This rating is validated per Table 2 and Table 6 of the NXP datasheet PBLS4005Y_PBLS4005V_3, with pulse testing conditions (t_p ≤ 1 ms) supporting up to −1 A peak current. Derating applies above 25 °C ambient per the R_th(j-a) = 416 K/W thermal resistance specification.

Can PBLS4005Y,115 be used as a standalone high-side switch without external components?

Yes - the TR1 PNP BISS section operates as a fully functional high-side switch with only base drive (Pin 2) required. Its low V_CEsat (≤ −350 mV at −500 mA) and integrated structure eliminate the need for external Schottky diodes or gate drivers. However, TR2's NPN RET section requires connection of Pin 4 (GND) and proper logic-level input on Pin 5 to function, but no additional resistors are needed due to its built-in R₁/R₂ network.

What is the function of Pin 3 and Pin 4 in the PBLS4005Y,115 pinout?

Pin 3 is the collector of TR2 (NPN RET), serving as its switched output node capable of sinking up to 100 mA. Pin 4 is the emitter of TR2 and is internally connected to GND - it must be externally tied to system ground to complete TR2's current path and enable proper biasing of its integrated resistor network. These pins are electrically isolated from TR1's terminals (Pins 1, 2, 6), allowing independent control of both transistors.

How does the R₂/R₁ ratio affect the switching behavior of the NPN RET section (TR2)?

The R₂/R₁ ratio (0.8–1.2 typ.) determines the internal voltage divider that sets TR2's effective base bias point relative to its emitter (Pin 4). A ratio near 1.0 ensures symmetric turn-on/turn-off thresholds, while deviations shift V_I(on) and V_I(off) - e.g., lower ratio increases noise immunity but raises required input voltage. This factory-trimmed ratio replaces manual resistor selection, guaranteeing consistent logic-level compatibility across production lots without calibration.