Nexperia USA Inc. PBLS6002D,115
- Part No.:
- PBLS6002D,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SC-74, SOT-457
- Datasheet:
-
PBLS6002D,115.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP 6TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:4,505
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Product details
Overview
PBLS6002D from Nexperia is a dual-transistor load switch integrating a 60 V, 1 A PNP low-VCEsat transistor (TR1) and a 50 V, 100 mA NPN resistor-equipped transistor (TR2) in a single SOT457 (TSOP6) package. It functions as a compact high-side switching solution for power rail control, delivering RCEsat = 255–340 mΩ at −1 A and input threshold < 1 V-enabling direct microcontroller GPIO drive in portable battery charger and LED backlight circuits.
For engineers reviewing the PBLS6002D datasheet, PBLS6002D pinout, PBLS6002D application, or PBLS6002D equivalent, key selection criteria include verified dual-transistor topology, confirmed 6-pin TSOP6 mechanical mapping, validated PNP/NPN complementary switching behavior, and documented thermal resistance of 208 K/W on ceramic PCB per device.
Technical Context
The PBLS6002D implements a monolithic dual-transistor architecture where TR1 (PNP) serves as the main high-side power switch with low saturation resistance and robust −60 V VCEO, while TR2 (NPN RET) provides integrated bias control with R1 = 3.3–6.1 kΩ and R2/R1 = 0.8–1.2. Both transistors share thermal coupling within the same die island and are electrically isolated except via internal interconnects defined in the pinning diagram.
Switching is enabled by applying ≥2.5 V to I2 (TR2 base), turning on TR2 to sink current from C1 through B1, thereby forward-biasing TR1's base-emitter junction. Turn-off occurs when I2 voltage drops below 0.5 V (VI(off)), ensuring clean state transition without latch-up under specified load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO (TR1) | −60 V - supports 48 V industrial rails and battery systems with margin |
| IC (TR1) | −1 A continuous - enables direct switching of high-current loads like LED strings or motor drivers |
| RCEsat (TR1) | 255–340 mΩ at −1 A/−100 mA - reduces conduction loss to ≤340 mW at full load |
| VCEO (TR2) | 50 V - ensures safe operation as control-stage switch in 24–36 V auxiliary supplies |
| IO (TR2) | 100 mA - sufficient to drive TR1 base with ≥10× overdrive for fast turn-on |
| R1 (TR2) | 3.3–6.1 kΩ - sets input current limit and defines logic-level compatibility with 1.8–3.3 V MCUs |
| ton/toff | 41 ns / 260 ns - supports PWM dimming up to ~1 MHz with minimal dead-time overhead |
Pinout & Package
SOT457 (TSOP6) plastic surface-mounted package: 3.0 mm × 1.7 mm × 0.95 mm body, 0.95 mm pitch, 6-lead gull-wing configuration with pin 1 index mark. Thermal pad not present; power dissipation relies on copper land area and PCB substrate (ceramic Al2O3 preferred).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 E1 | Emitter of TR1 (PNP) | Common emitter node; connects to system ground or return path for switched load |
| 2 B1 | Base of TR1 (PNP) | Controlled by TR2 output; requires negative base current for TR1 conduction |
| 3 O2 | Collector of TR2 (NPN) | Active-low driver output that pulls B1 low to enable TR1 |
| 4 GND2 | Emitter of TR2 (NPN) | Reference node for TR2 bias network; tied to system ground |
| 5 I2 | Base input of TR2 (NPN) | Logic-compatible input (VI(on) = 1.9–2.5 V); accepts standard MCU GPIO |
| 6 C1 | Collector of TR1 (PNP) | Main power output terminal; connects to positive supply rail of load |
Key Features
| Feature | Design Value |
|---|---|
| Dual-transistor integration | Eliminates discrete base-drive resistor network and saves ≥4 PCB components vs. discrete PNP+NPN design |
| Low VCEsat (TR1) | 255–340 mΩ at −1 A enables <0.34 V drop across main switch-critical for 3.3 V or lower supply rails |
| Integrated bias resistors (TR2) | R1 = 4.7 kΩ typ and R2/R1 = 1.0 ensure stable current gain and reduce layout sensitivity to stray capacitance |
| Low-threshold logic interface | VI(on) = 1.9–2.5 V allows direct drive from 1.8 V, 2.5 V, and 3.3 V microcontrollers without level-shifting |
| Thermal performance | Rth(j-a) = 208 K/W on ceramic PCB supports 400 mW total dissipation-sufficient for 1 A DC load at 25 °C ambient |
Applications
| Battery Charger Switch | LED Backlight High-Side Control |
|---|---|
Use Scenario: Enables/disables charging current path between USB-C PD source and Li-ion battery pack during fault conditions or charge termination. IC Role / Device Role / Timing Role: Acts as fail-safe high-side disconnect switch controlled by battery management IC; operates in static on/off mode with no PWM. Use Value: RCEsat ≤340 mΩ limits voltage drop to <340 mV at 1 A, preserving charging efficiency and thermal headroom in space-constrained portable designs. | Use Scenario: Supplies regulated current to white LED strings in smartphone or tablet displays, with brightness adjusted via PWM from display controller. IC Role / Device Role / Timing Role: Functions as high-side current source switch; driven by 100–1000 Hz PWM signal applied to I2 pin. Use Value: 41 ns ton/260 ns toff ensures minimal duty-cycle distortion and flicker-free dimming down to 0.1% brightness. |
| Portable Equipment Power Rail Switch | Industrial Sensor Supply Enable |
Use Scenario: Powers auxiliary subsystems (e.g., GPS module, BLE radio) only when active, reducing quiescent current in sleep mode. IC Role / Device Role / Timing Role: Serves as always-on, low-leakage power gate; biased by host MCU GPIO with VI(off) ≤0.5 V guaranteeing TR2 cutoff. Use Value: ICEO ≤1 µA at 30 V ensures <1 µA standby leakage-extending battery life beyond 1 year in deep-sleep IoT nodes. | Use Scenario: Enables 24 V supply to analog pressure/temperature sensors in factory automation PLC modules during measurement cycles. IC Role / Device Role / Timing Role: Provides robust high-side switching with −60 V VCEO margin against industrial transients and load-dump events. Use Value: −80 V VCBO rating withstands ISO 7637-2 Pulse 1 (−100 V) with safety margin, eliminating need for external TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-transistor load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVD6002PFT1G | Same dual PNP/NPN topology but rated for −40 V VCEO (TR1) and 150 mA IO (TR2); RCEsat = 400 mΩ min | Limited to ≤36 V systems; unsuitable for 48 V battery chargers or industrial 24 V with surge margin | Select only if VIN ≤40 V and thermal budget allows higher conduction loss |
| EMH2D | Single-channel PNP load switch (no integrated RET); requires external base resistor network and separate control transistor | Increases BOM count by ≥3 components and occupies ~2× PCB area vs. PBLS6002D | Choose only when discrete tuning of base drive or independent TR1/TR2 timing is required |
Compared with NSVD6002PFT1G, PBLS6002D offers 20 V higher VCEO margin and 16% lower RCEsat, enabling safer operation in 48 V automotive-derived systems; versus EMH2D, it delivers 40% smaller footprint and eliminates layout-dependent base-drive variability.
Availability
PBLS6002D is available at Aetrix Electronics and suitable for battery charger switches, LED backlight control, and portable equipment power rail management requiring stable component supply and long-term industrial lifecycle support.
Supply support for PBLS6002D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and bipolar transistors-with manufacturing rooted in process efficiency and automotive-grade quality systems.
The PBLS6002D belongs to Nexperia's Load Switch Transistor family, engineered specifically for space-constrained, low-power-consumption portable and industrial applications where integration, low VCEsat, and logic-level compatibility are critical.
FAQ
What is the maximum continuous current the PBLS6002D can switch on its PNP transistor (TR1)?
The PBLS6002D supports −1 A continuous collector current on TR1 under specified thermal conditions: mounted on a ceramic Al₂O₃ PCB with standard footprint, Tamb ≤ 25 °C, and derated per Figure 1. At higher ambient temperatures or on FR4, current must be reduced to maintain junction temperature ≤150 °C using the published Rth(j-a) values.
Can the PBLS6002D be used with a 1.8 V microcontroller GPIO?
Yes. The TR2 input threshold VI(on) is guaranteed ≥1.9 V (typical 2.5 V) and VI(off) ≤0.5 V, making it compatible with 1.8 V logic. At 1.8 V, I2 draws ~380 µA (1.8 V / 4.7 kΩ), which is within TR2's specified input range and sufficient to fully saturate TR2 for reliable TR1 turn-on.
Does the PBLS6002D include ESD protection on its pins?
No. The PBLS6002D does not integrate on-chip ESD protection diodes. Per the datasheet, all pins are rated to HBM ±2 kV (Class 2), meaning external TVS or series resistors are recommended for I/O lines exposed to handling or connector interfaces-especially I2 and O2 pins in portable equipment with user-accessible ports.
How is thermal performance affected when mounting on FR4 versus ceramic PCB?
On FR4 with standard footprint, Rth(j-a) rises from 208 K/W (ceramic) to 312 K/W-reducing allowable power dissipation by ~33%. For example, at Tamb = 25 °C, max Ptot drops from 400 mW (ceramic) to 250 mW (FR4). Use larger copper pours or thermal vias to approach ceramic-level performance on FR4.
PBLS6002D,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max):
- 100mA, 700mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V, 60V
- Resistor - Base (R1):
- 4.7kOhms
- Resistor - Emitter Base (R2):
- 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V / 150 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 1µA, 100nA
- Frequency - Transition:
- 185MHz
- Power - Max:
- 600mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PBLS6002D,115 FAQ
1.How can I place an order for PBLS6002D,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBLS6002D,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBLS6002D,115 reliable?
The price and inventory of PBLS6002D,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBLS6002D,115 is usually 5 days.
3.What payment methods are accepted for PBLS6002D,115?
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4.How is shipping managed for PBLS6002D,115?
PBLS6002D,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBLS6002D,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBLS6002D,115?
For technical support, including PBLS6002D,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBLS6002D,115 requirements.
6.How does Aetrix verify that PBLS6002D,115 is sourced from the original manufacturer or authorized distributors?
All PBLS6002D,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBLS6002D,115 meets industry standards.
7.What is the process for return or replacement of PBLS6002D,115?
All PBLS6002D,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBLS6002D,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBLS6002D,115 part is unused and in its original packaging.
Return procedure for PBLS6002D,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBLS6002D,115 Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

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PUMD12,115
Nexperia USA Inc.

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PUMD9,115
Nexperia USA Inc.

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PUMH9,115
Nexperia USA Inc.

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PUMD3,115
Nexperia USA Inc.

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DCX114EU-7-F
Diodes Incorporated

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PUMD13,115
Nexperia USA Inc.
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