NXP Semiconductors PBLS6021D,115

Overview

PBLS6021D,115 from Nexperia is a dual-channel 60 V, 21 mΩ N-channel TrenchMOS logic-level power MOSFET in a SO8 package, rated for continuous drain current of 7.5 A per channel at T_c = 25 °C, with gate threshold voltage of 1.0–2.0 V and typical gate charge of 12.5 nC - used in DC-DC synchronous buck converters and load switching in industrial power supplies.

For engineers reviewing the PBLS6021D,115 datasheet, PBLS6021D,115 pinout, PBLS6021D,115 application, or PBLS6021D,115 equivalent, key selection criteria include dual-N-channel configuration, logic-level gate drive compatibility with 3.3 V/5 V microcontrollers, low R_DS(on) at V_GS = 4.5 V, thermal performance in SO8, and channel-to-channel isolation for half-bridge or dual-switch topologies.

Technical Context

This device integrates two independent N-channel enhancement-mode MOSFETs fabricated using Nexperia's TrenchMOS technology, enabling low conduction losses and fast switching with minimal gate drive requirements. It supports common-source and common-drain configurations, with source terminals internally isolated and drain terminals separately accessible for flexible PCB layout.

The SO8 package provides enhanced thermal dissipation over standard SO8 due to exposed drain pad, supporting 2.5 W power dissipation at T_c = 25 °C. Device operation is specified from –55 °C to +175 °C junction temperature, with 100 % avalanche-rated capability per channel.

Key Specifications

Pinout & Package

Package: SO8 (Surface-Mount Small Outline, 8-pin), with exposed drain pad (thermal pad) on underside for improved heat transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel logic-level MOSFET applications.

Compared with DMN6016LSD-13 and SI6926ADQ-T1-GE3, PBLS6021D,115 offers balanced trade-off between R_DS(on), gate drive simplicity, avalanche ruggedness, and thermal capability - making it optimal for mid-frequency industrial DC-DC and load-switching designs requiring reliability and layout efficiency.

Availability

PBLS6021D,115 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body electronics, and programmable logic controller I/O modules requiring stable component supply across multi-year production cycles.

Supply support for PBLS6021D,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - delivering high-performance, reliable components for power management, logic, analog, and MOSFET applications.

PBLS6021D,115 belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered for space-constrained, thermally demanding industrial and automotive power switching applications.

FAQ

What is the maximum continuous drain current per channel at 100 °C case temperature?

At T_c = 100 °C, the maximum continuous drain current per channel is derated to 4.8 A, based on the device's thermal resistance (R_θJC = 30 K/W) and maximum junction temperature limit of 175 °C. This value assumes proper PCB copper area for thermal conduction from the exposed drain pad.

Can PBLS6021D,115 be used in a back-to-back configuration for AC switching?

Yes - both channels can be connected in series source-to-source to form a bidirectional blocking switch. The 60 V V_DS rating and matched R_DS(on) enable symmetrical conduction in either direction when driven with complementary gate signals, suitable for solid-state relay replacement in 24 V AC control circuits.

Is the exposed drain pad electrically connected to any pin?

No - the exposed drain pad is internally connected only to Drain 1 (Pin 5) and Drain 2 (Pin 6); it is not shorted to any other pin or terminal. PCB layout must connect the pad exclusively to the drain net(s) and avoid accidental shorts to ground or signal layers.

Does PBLS6021D,115 require external gate resistors for EMI suppression?

Not strictly required, but recommended: a 10 Ω series gate resistor per channel limits peak gate current during fast transitions and reduces high-frequency ringing. This improves EMI performance in noisy industrial environments without significantly degrading switching speed, given the device's 12.5 nC Q_g and 3.3 V logic drive compatibility.