Nexperia USA Inc. PEMB10,115

Overview

PEMB10 from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for −50 V V_CEO, −100 mA output current per transistor, with built-in bias resistors R1 = 2.2 kΩ and R2 = 47 kΩ (R2/R1 ≈ 21). It functions as a dual digital switching element for low-current logic interfacing and peripheral control in space-constrained PCBs.

For engineers reviewing the PEMB10 datasheet, PEMB10 pinout, PEMB10 application, or PEMB10 equivalent, this device serves as a drop-in replacement for discrete PNP pairs in level-shifting, IC input conditioning, and low-power driver stages where component count reduction and board area savings are critical.

Technical Context

The PEMB10 integrates two matched PNP transistors with on-die base bias networks-each featuring a series input resistor (R1) and feedback resistor (R2)-enabling direct TTL/CMOS-compatible logic-level drive without external bias components. Its dual-emitter-grounded configuration supports independent control of both transistors.

Designed for operation at ambient temperatures from −65 °C to +150 °C, it delivers guaranteed −100 mA output per channel at V_CE = −5 V with h_FE ≥ 100 (I_C = −10 mA), and maintains V_CE(sat) ≤ −100 mV under I_C = −5 mA / I_B = −0.25 mA conditions.

Key Specifications

Pinout & Package

SOT666 plastic surface-mounted package: 6-lead, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height. Ultra-small footprint ideal for high-density portable and IoT PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP resistor-equipped transistor applications.

Compared with PEMD10 and PEMH10, the PEMB10 provides matched dual-sink capability ideal for ground-referenced loads, while PEMD10 supports asymmetrical drive and PEMH10 suits positive-rail switching - selection depends strictly on load polarity and system grounding constraints.

Availability

PEMB10 is available at Aetrix Electronics and suitable for LED indicator driver circuits, microcontroller GPIO expansion, low-power relay control, and digital signal conditioning requiring stable component supply across industrial and consumer production programs.

Supply support for PEMB10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices optimized for efficiency and miniaturization in high-volume electronics.

The PEMB10 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete transistor-resistor combinations in digital interface and low-power switching applications.

FAQ

What is the maximum allowable input voltage at I1 or I2 pins?

The absolute maximum input voltage is −12 V (negative only), per Table 5. This rating applies with respect to the respective emitter (GND1 or GND2). Exceeding this may damage the internal R1 resistor or base-emitter junction. For standard 3.3 V or 5 V logic, the device operates safely within VI(on) and VI(off) ranges shown in Figures 5–6.

Can PEMB10 be used in linear amplifier mode?

No - the PEMB10 is characterized and specified only for switching operation. Its h_FE minimum is guaranteed only at I_C = −10 mA, and V_CE(sat) and VI(on)/VI(off) parameters assume saturated or cutoff states. Linear region behavior (e.g., small-signal gain, frequency response) is neither tested nor guaranteed.

Is thermal derating required above 25 °C ambient?

Yes - per Figure 1, total device power dissipation must be linearly derated above Tamb = 25 °C at 3.6 mW/°C (300 mW ÷ (150 − 25)). At 85 °C ambient, maximum allowed P_tot drops to 108 mW. Layout with adequate copper pour on GND1/GND2 pads improves thermal performance beyond the FR4 baseline.

How does the R2/R1 ratio affect switching behavior?

The R2/R1 ratio of 21 establishes negative feedback that stabilizes the transistor's operating point against β variation and temperature shift. It ensures consistent saturation depth and prevents thermal runaway during sustained conduction - critical for reliability in unattended or sealed-system deployments.