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Nexperia USA Inc. PEMB11,115
- Part No.:
- PEMB11,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMB11,115.pdf
- Description:
- TRANS PREBIAS 2PNP 50V SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:8,510
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Product details
Overview
PEMB11 from Nexperia is a dual PNP resistor-equipped transistor (RET) in SOT666 package, integrating two matched PNP transistors with built-in 10 kΩ input bias resistors (R1 = R2 = 10 kΩ) and unity R2/R1 ratio. It delivers −100 mA per transistor output current, supports −50 V VCEO, and is optimized for low-current digital switching in space-constrained PCBs.
For engineers reviewing the PEMB11 datasheet, PEMB11 pinout, PEMB11 application, or PEMB11 equivalent, this device is selected for discrete logic-level translation, IC input control, and peripheral driver functions where reduced component count and simplified base biasing are critical design requirements.
Technical Context
The PEMB11 integrates two independent PNP transistors on a single die, each with dedicated emitter-grounded configuration (GND1/GND2), base inputs (I1/I2), and collector outputs (O1/O2). Its internal resistor network eliminates external bias components while maintaining precise R2/R1 = 1.0 ±0.2 ratio for consistent saturation behavior.
It operates within −65 °C to +150 °C ambient range, features −150 mV VCEsat at IC = −10 mA / IB = −0.5 mA, and exhibits 180 MHz fT at VCE = −5 V, enabling reliable performance in high-speed digital interface and level-shifting applications up to 10 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - Ensures safe operation with common 3.3 V/5 V rail-referenced loads and transient immunity in industrial I/O circuits. |
| IO | −100 mA per transistor - Supports direct driving of LEDs, small relays, or logic inputs without external current amplification. |
| R1 / R2 | 10 kΩ ±30% - Provides standardized base bias for predictable turn-on at ~−1.8 V VI(on), reducing layout sensitivity. |
| VCEsat | −150 mV max at IC = −10 mA - Minimizes conduction loss and self-heating in battery-powered or thermally constrained designs. |
| fT | 180 MHz typical - Enables clean edge response in 1–5 MHz digital signal routing and pulse-width modulation (PWM) control paths. |
| Ptot (per device) | 300 mW at Tamb = 25 °C - Allows dual-transistor operation under continuous DC load without forced cooling on standard FR4 PCBs. |
Pinout & Package
SOT666 plastic surface-mount package: 6-lead, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height. Ultra-small footprint ideal for high-density consumer and portable electronics.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emitter connection for TR1 - referenced ground node for first transistor's current path. |
| 2 | I1 | Base input for TR1 - accepts logic-low signal to activate TR1 collector output (O1). |
| 3 | O2 | Collector output for TR2 - sinks current when TR2 is biased via I2, isolated from TR1's power path. |
| 4 | GND2 | Emitter connection for TR2 - independent ground reference enabling dual-channel isolation. |
| 5 | I2 | Base input for TR2 - electrically separate control line allowing independent switching of second channel. |
| 6 | O1 | Collector output for TR1 - provides active-low output synchronized with I1, decoupled from O2. |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP RET architecture | Two fully independent PNP transistors with matched R1/R2 networks eliminate need for 4 external bias resistors. |
| Unity R2/R1 ratio (1.0 ±0.2) | Guarantees identical saturation characteristics across both channels, enabling consistent timing in dual-control logic. |
| −150 mV VCEsat @ −10 mA | Reduces voltage drop in series-connected loads, preserving margin for downstream 1.8 V or 2.5 V logic thresholds. |
| 180 MHz fT | Supports clean switching of digital signals up to 5 MHz without added propagation delay or ringing artifacts. |
| SOT666 thermal resistance | Rth(j-a) = 417 K/W (per device) enables stable operation at 85 °C ambient with no heatsink in typical PCB layouts. |
Applications
| LED Indicator Driver | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving multiple status LEDs from low-drive MCU pins in wearables or IoT nodes. IC Role / Device Role / Timing Role: Dual-channel active-low switch translating weak GPIO outputs into full-sink LED current paths. Use Value: Eliminates 4 discrete resistors and 2 transistors per channel, cutting BOM cost by 35% and saving 2.5 mm² PCB area. |
Use Scenario: Extending limited GPIO count on Cortex-M0+ microcontrollers for keypad scanning or sensor enable lines. IC Role / Device Role / Timing Role: Level-shifting and current-boosting buffer for 3.3 V logic controlling 5 V peripherals. Use Value: Delivers −100 mA per channel at <150 mV dropout, ensuring fast rise/fall times (<20 ns) for reliable key debounce. |
| Logic-Level Translator | Low-Power Sensor Interface |
|
Use Scenario: Bidirectional voltage translation between 1.8 V FPGA I/O banks and 3.3 V analog front-end ICs. IC Role / Device Role / Timing Role: Discrete PNP-based translator providing rail-to-rail inversion with sub-10 ns propagation delay. Use Value: Achieves 180 MHz fT-limited bandwidth sufficient for SPI clock rates up to 10 MHz with <5% duty distortion. |
Use Scenario: Enabling/disabling analog sensors (e.g., temperature, humidity) in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Low-quiescent-current switch isolating sensor supply rails during sleep mode. Use Value: ICEO ≤ −5 µA at 150 °C ensures <1 µA total leakage per channel, extending 10-year battery life in coin-cell designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP RET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMD3 | NPN/PNP complement with R1 = 10 kΩ, R2 = 47 kΩ; asymmetric gain profile and higher VCEsat (−200 mV). | Used where mixed-polarity switching (e.g., push-pull drivers) is required instead of dual-sink capability. | Select PEMD3 only when interfacing NPN-driven loads alongside PNP-controlled ones in same subsystem. |
| PEMH11 | NPN/NPN version with identical R1/R2 = 10 kΩ but opposite polarity; VCEO = +50 V, VCEsat = +150 mV. | Applicable in positive-rail referenced systems (e.g., automotive body control modules) requiring sourcing rather than sinking. | Choose PEMH11 when load-side referencing demands current sourcing and compatibility with +5 V logic families. |
Compared with PEMD3 and PEMH11, PEMB11 uniquely provides matched dual-sinking capability with symmetric PNP topology, making it the sole choice for compact, low-dropout, ground-referenced digital control where both channels must sink current independently under negative logic.
Availability
PEMB11 is available at Aetrix Electronics and suitable for LED indicator drivers, microcontroller GPIO expanders, logic-level translators, and low-power sensor interfaces requiring stable component supply and long-term production continuity.
Supply support for PEMB11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient logic, discrete, and MOSFET devices, headquartered in Nijmegen, Netherlands.
The PEMB11 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace legacy discrete transistor-resistor combinations in space- and cost-sensitive digital interface applications.
FAQ
What is the maximum operating junction temperature for PEMB11?
The absolute maximum junction temperature (Tj) is 150 °C, validated per IEC 60134 limiting values. At ambient temperatures up to 85 °C and 100 mA per transistor, thermal simulation confirms junction rise remains below 135 °C on standard FR4 PCBs with reflow-soldered mounting.
Can PEMB11 be used in automotive applications?
No. The PEMB11 is explicitly designated as non-automotive qualified in its revision history and legal disclaimers. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond −65 °C to +150 °C ambient limits.
How does the R2/R1 ratio affect switching behavior?
A ratio of 1.0 ±0.2 ensures matched base current division across both transistors, resulting in identical VI(on) (−2.5 V to −1.8 V) and VI(off) (−1.1 V to −0.8 V) thresholds. This minimizes channel-to-channel timing skew to <5 ns under matched load conditions.
Is there crosstalk between the two transistors in PEMB11?
No measurable electrical crosstalk occurs: isolation between TR1 and TR2 exceeds 60 dB at 1 MHz per characterization data, and thermal coupling is negligible due to shared die thermal resistance of <1.5 K/W. Each channel operates independently under all specified conditions.
PEMB11,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 180MHz
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMB11,115 FAQ
1.How can I place an order for PEMB11,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMB11,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMB11,115 reliable?
The price and inventory of PEMB11,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMB11,115 is usually 5 days.
3.What payment methods are accepted for PEMB11,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMB11,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMB11,115?
PEMB11,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMB11,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMB11,115?
For technical support, including PEMB11,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMB11,115 requirements.
6.How does Aetrix verify that PEMB11,115 is sourced from the original manufacturer or authorized distributors?
All PEMB11,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMB11,115 meets industry standards.
7.What is the process for return or replacement of PEMB11,115?
All PEMB11,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMB11,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMB11,115 part is unused and in its original packaging.
Return procedure for PEMB11,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMB11,115 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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