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NXP Semiconductors PEMB1,115
- Part No.:
- PEMB1,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMB1,115.pdf
- Description:
- NOW NEXPERIA PEMB1 - SMALL SIGNA
- Quantity:
- Payment:
- Shipping:
Inventory:34,840
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Product details
Overview
PEMB1,115 from Nexperia is a dual PNP resistor-equipped transistor (RET) in SOT666 package, integrating two matched PNP transistors with built-in 22 kΩ input bias resistors (R1) and 22 kΩ feedback resistors (R2), rated for −50 V VCEO, −100 mA output current per transistor, and AEC-Q101 qualified for automotive signal conditioning and level-shifting applications.
For engineers reviewing the PEMB1,115 datasheet, PEMB1,115 pinout, PEMB1,115 application, or PEMB1,115 equivalent, this device serves as a space-optimized, pick-and-place–friendly replacement for discrete PNP pairs in digital logic interfacing, microcontroller I/O buffering, and low-power peripheral driver circuits where bias resistor matching and thermal derating on FR4 PCBs are critical selection factors.
Technical Context
The PEMB1,115 integrates two independent PNP transistors sharing no internal connection between collector-emitter paths, each with dedicated base-input terminals and emitter-ground terminals. Its R1/R2 ratio of 0.8–1.2 ensures stable saturation behavior across temperature, while its −150 mV VCEsat at −10 mA/−0.5 mA enables low-loss switching in 3.3 V and 5 V logic domains.
Designed for reflow-only assembly on standard FR4 PCBs, it delivers 300 mW total device power dissipation at Tamb ≤ 25 °C and exhibits 417 K/W junction-to-ambient thermal resistance per device - enabling reliable operation up to 150 °C junction temperature in compact automotive control modules and industrial sensor interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - Maximum safe collector-emitter voltage under open-base condition; supports robust interface with 24 V industrial buses. |
| IO | −100 mA per transistor - Continuous DC output current capability; sufficient for driving LEDs, small relays, or logic inputs. |
| R1 | 22 kΩ (15.4–28.6 kΩ) - Integrated base-input resistor; eliminates external bias components and reduces BOM count by two per channel. |
| R2/R1 ratio | 0.8–1.2 - Tight tolerance ensures consistent transistor turn-on threshold and predictable VI(on)/VI(off) hysteresis. |
| VCEsat | −150 mV at IC = −10 mA, IB = −0.5 mA - Low saturation voltage minimizes power loss and heat generation in high-duty-cycle switching. |
| fT | 180 MHz - Transition frequency confirms suitability for digital signal switching up to ~10–20 MHz edge rates without significant delay distortion. |
| AEC-Q101 | Qualified - Meets stress-test requirements for automotive discrete semiconductors; validated for under-hood and body-control module use. |
Pinout & Package
SOT666 surface-mount plastic package (1.7 mm × 1.5 mm × 0.6 mm), ultra-small flat lead, 6-pin configuration with exposed pad not present; optimized for automated placement and reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND (emitter of TR1) | Common emitter reference for first transistor; connects directly to PCB ground plane for low-impedance return path. |
| 2 | Input (base of TR1) | Resistor-biased base node - accepts logic-level signals; internal R1 pulls up to VCC when un-driven. |
| 3 | Output (collector of TR2) | Active-low output stage - sinks current when TR2 is on; used for inverted logic or active-low enable functions. |
| 4 | GND (emitter of TR2) | Independent emitter terminal for second transistor; allows separate grounding or current sensing if needed. |
| 5 | Input (base of TR2) | Second independent biased input - identical electrical behavior to Pin 2; supports dual-channel synchronous control. |
| 6 | Output (collector of TR1) | Primary active-low output - complements Pin 3; enables push-pull-like functionality with external pull-up. |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP RET architecture | Two fully isolated PNP transistors with matched R1/R2 networks reduce layout area by >40% vs. discrete equivalents. |
| Integrated bias resistors | Eliminates four external 22 kΩ resistors per device, cutting placement time and reducing risk of tombstoning or misalignment. |
| Low VCEsat | −150 mV enables <15 mW conduction loss at 100 mA - critical for thermally constrained modules in sealed enclosures. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including HTOL, TC, and ESD testing - supports Tier-1 supply chain compliance. |
| Reflow-only assembly | Optimized thermal profile compatibility avoids wave-soldering damage; supports high-yield manufacturing in SMT lines. |
Applications
| Automotive Body Control Module | Industrial PLC Input Stage |
|---|---|
Use Scenario: Level-shifting 12 V sensor signals to 3.3 V MCU GPIO inputs in door module ECUs. IC Role / Device Role / Timing Role: Dual-channel active-low translator providing noise-immune, current-limited interface with built-in hysteresis. Use Value: Replaces two discrete PNP+resistor sets, reducing footprint by 3.2 mm² and eliminating 4 passive components per channel. |
Use Scenario: Isolating 24 V field-device status signals before feeding into FPGA I/O banks. IC Role / Device Role / Timing Role: Digital input conditioner with defined VI(on)/VI(off) thresholds and fast turn-off (<100 ns typical). Use Value: Ensures clean logic transitions despite cable-induced ringing; R1/R2 ratio stability maintains consistent noise margin across temperature. |
| Consumer Appliance UI Panel | Medical Diagnostic Sensor Interface |
Use Scenario: Driving LED indicators and tactile feedback buzzers from low-voltage microcontroller outputs. IC Role / Device Role / Timing Role: Low-side switch array with integrated base drive - simplifies firmware control and reduces external component count. Use Value: Enables single-GPIO control of multiple loads; −100 mA rating supports simultaneous activation of 3× 20 mA LEDs. |
Use Scenario: Conditioning analog front-end enable/disable signals in portable ultrasound probe electronics. IC Role / Device Role / Timing Role: Precision-controlled power gating element with guaranteed VCEO margin and low leakage (<100 nA ICEO). Use Value: Prevents unintended biasing of sensitive analog stages during standby; AEC-Q101 qualification assures long-term parametric stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PUMB1 | SOT363 (SC-88) package; identical R1/R2 values and electrical specs but smaller footprint (1.35 mm × 2.2 mm) and higher thermal resistance (625 K/W per transistor). | Better suited for ultra-dense consumer PCBs where height clearance is limited; less optimal for sustained >50 mA loads due to lower Ptot derating. | Select PUMB1 when board area is constrained and peak current remains below 50 mA per channel. |
| EMB1 (Nexperia) | Same SOT666 package but NPN/NPN complement; lacks PNP polarity required for high-side sinking or level-down translation. | Only usable in non-inverting configurations or where sourcing (not sinking) current is needed - incompatible with PEMB1's core use cases. | Not a functional substitute; choose only if circuit topology explicitly requires NPN logic inversion or sourcing capability. |
Compared with PUMB1, PEMB1,115 offers superior thermal performance (417 vs. 625 K/W) and higher per-device power handling (300 mW), making it preferred for automotive and industrial applications with ambient temperatures above 70 °C; EMB1 is electrically incompatible for PNP-specific roles like active-low drivers or 12 V-to-3.3 V translation.
Availability
PEMB1,115 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC input stages, and consumer appliance UI panels requiring stable component supply, AEC-Q101 compliance, and SMT-compatible packaging.
Supply support for PEMB1,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.
The PEMB1,115 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete transistor-resistor combinations in digital interface and peripheral driver applications while maintaining AEC-Q101 qualification and SMT manufacturability.
FAQ
What is the maximum continuous output current per transistor in PEMB1,115?
The PEMB1,115 supports −100 mA continuous DC output current per transistor under recommended operating conditions (Tamb ≤ 25 °C, FR4 PCB). At elevated ambient temperatures, derating applies: power dissipation drops linearly to zero at 150 °C junction temperature, limiting usable current in high-temp environments.
Can PEMB1,115 be used in place of discrete PNP transistors and base resistors?
Yes - PEMB1,115 replaces two discrete PNP transistors plus four external 22 kΩ resistors (two per transistor), delivering identical biasing behavior with tighter R1/R2 matching (0.8–1.2 ratio), reduced PCB area, and improved assembly yield. No circuit redesign is needed beyond footprint adaptation.
Is wave soldering supported for PEMB1,115?
No - the datasheet explicitly states reflow soldering is the only recommended method. Wave soldering risks thermal damage due to the SOT666 package's thermal mass and internal resistor tolerances; using wave soldering voids AEC-Q101 qualification and may cause parameter shift or latent failure.
How does the R2/R1 ratio affect switching behavior in PEMB1,115?
The R2/R1 ratio (0.8–1.2) directly controls internal feedback strength, determining VI(on) and VI(off) thresholds. A ratio near 1.0 yields symmetric hysteresis (~0.3 V window), improving noise immunity in noisy automotive or industrial environments - critical for reliable digital signal interpretation without external Schmitt triggers.
PEMB1,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 22kOhms
- Resistor - Emitter Base (R2):
- 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMB1,115 FAQ
1.How can I place an order for PEMB1,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMB1,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMB1,115 reliable?
The price and inventory of PEMB1,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMB1,115 is usually 5 days.
3.What payment methods are accepted for PEMB1,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMB1,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMB1,115?
PEMB1,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMB1,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMB1,115?
For technical support, including PEMB1,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMB1,115 requirements.
6.How does Aetrix verify that PEMB1,115 is sourced from the original manufacturer or authorized distributors?
All PEMB1,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMB1,115 meets industry standards.
7.What is the process for return or replacement of PEMB1,115?
All PEMB1,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMB1,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMB1,115 part is unused and in its original packaging.
Return procedure for PEMB1,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMB1,115 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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