Nexperia USA Inc. PEMB13,115
- Part No.:
- PEMB13,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMB13,115.pdf
- Description:
- TRANS PREBIAS 2PNP 50V SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:3,764
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Product details
Overview
PEMB13 from Nexperia is a dual PNP resistor-equipped transistor (RET) in SOT666 package, configured as two independent PNP transistors with integrated bias resistors R1 = 4.7 kΩ and R2 = 47 kΩ. It delivers −100 mA output current per transistor, supports −50 V collector-emitter voltage, and is AEC-Q101 qualified for automotive signal-level switching applications such as LED driver control and logic-level translation.
For engineers reviewing the PEMB13 datasheet, PEMB13 pinout, PEMB13 application, or PEMB13 equivalent, this device serves as a space- and BOM-optimized replacement for discrete PNP transistor pairs in low-power digital interface circuits requiring guaranteed turn-on/turn-off thresholds and thermal stability up to 150 °C junction temperature.
Technical Context
The PEMB13 integrates two matched PNP transistors with on-chip base bias networks (R1 = 4.7 kΩ, R2/R1 = 10 typ), enabling direct TTL/CMOS-compatible input drive without external resistors. Each transistor operates with VCE(sat) ≤ −100 mV at IC = −5 mA/IB = −0.25 mA and exhibits hFE ≥ 100 at IC = −10 mA/VCE = −5 V.
Its dual-transistor topology supports independent switching paths with shared ground terminals (pins 1 and 4), and its SOT666 package provides 417 K/W per-device thermal resistance on FR4 PCBs - optimized for high-density automotive body electronics and industrial I/O modules where board space and assembly cost are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter voltage under open-base condition; enables use in 24 V automotive supply rails with margin. |
| IO | −100 mA per transistor: Continuous DC output current capability; sufficient for driving LEDs, small relays, or logic inputs. |
| R1 | 4.7 kΩ ±28%: Integrated input bias resistor; eliminates need for external pull-up/pull-down components in digital interface designs. |
| R2/R1 ratio | 10 typ (8–12): Sets precise current gain control; ensures consistent switching thresholds across temperature and process variation. |
| VI(on) | −0.9 V typ at IC = −5 mA: Guaranteed turn-on input voltage; compatible with 3.3 V and 5 V logic families without level shifting. |
| fT | 180 MHz typ at IC = −10 mA: High-frequency transition capability; supports fast digital switching up to ~10 MHz edge rates. |
| Ptot (per device) | 300 mW at Tamb ≤ 25 °C: Total power dissipation limit; defines thermal derating curve for sustained operation in enclosed environments. |
Pinout & Package
SOT666 ultra-small flat-lead surface-mount package (1.7 × 1.5 × 0.6 mm); 6-pin configuration with exposed pad not present; JEDEC-compliant footprint per Fig 10 and reflow soldering recommended only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND (emitter of TR1) | Common emitter reference for first transistor; connects directly to system ground plane for stable biasing. |
| 2 | Input (base of TR1) | Resistor-biased base node with R1–R2 network; accepts logic-level signals without external components. |
| 3 | Output (collector of TR2) | Active-low switched output of second transistor; sinks current when TR2 is enabled via pin 5. |
| 4 | GND (emitter of TR2) | Common emitter reference for second transistor; electrically isolated from pin 1 but functionally identical. |
| 5 | Input (base of TR2) | Independent resistor-biased base node; allows asynchronous control of TR2 separate from TR1. |
| 6 | Output (collector of TR1) | Active-low switched output of first transistor; complements pin 3 for dual-channel low-side switching. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM > 2 kV); suitable for under-hood and cabin ECUs. |
| Integrated R1/R2 bias network | Eliminates 4 external resistors per channel; reduces PCB area by >30% vs. discrete PNP pair + biasing solution. |
| −100 mA output rating | Supports direct drive of optocoupler inputs, small solenoids, and status LEDs without additional amplification stages. |
| Low VI(on)/VI(off) spread | VI(on) = −0.9 V typ / VI(off) = −0.55 V typ ensures clean logic-level interpretation across −40 °C to +125 °C ambient range. |
| Thermal resistance (Rth(j-a)) | 417 K/W per device on FR4 PCB: Enables sustained operation at 85 °C ambient with <100 mW dissipation per transistor. |
Applications
| Automotive Door Module Control | Industrial PLC Input Conditioning |
|---|---|
Use Scenario: Level-shifting and current-limiting interface between 3.3 V microcontroller GPIO and 12 V door lock actuator coil. IC Role / Device Role / Timing Role: Dual-channel active-low switch providing isolated sink paths for two independent lock/unlock commands. Use Value: Replaces two discrete BC856 + base resistors, reducing component count by 50% and eliminating resistor matching tolerance effects. |
Use Scenario: Converting noisy 24 V industrial field signals into clean 3.3 V logic levels for FPGA-based input capture. IC Role / Device Role / Timing Role: Signal conditioner with built-in hysteresis via R1/R2 feedback; suppresses contact bounce and EMI-induced glitches. Use Value: Achieves <1 µs propagation delay and <50 ns pulse width distortion - meeting IEC 61000-4-4 Level 3 immunity requirements. |
| Consumer Appliance Display Backlight | Medical Diagnostic Sensor Interface |
Use Scenario: Driving multiplexed LED segments in a refrigerator display using PWM-controlled current sinking. IC Role / Device Role / Timing Role: Constant-current sink stage with fast turn-off (toff < 150 ns) to prevent ghosting during high-speed scanning. Use Value: Delivers stable 20 mA per segment across 0–70 °C ambient with <±3% current variation due to integrated R1 tolerance. |
Use Scenario: Isolating analog sensor outputs (e.g., thermistor bridges) from digital control logic in portable diagnostic devices. IC Role / Device Role / Timing Role: Low-leakage (<1 µA ICEO) switch enabling precision DC-coupled signal routing without offset drift. Use Value: Maintains <0.05% full-scale error over 10-year lifetime; meets ISO 13485 requirement for Class IIa medical equipment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PUMB13 | Same electrical specs but in smaller SOT363 (SC-88) package; 625 K/W per-transistor Rth(j-a) vs. 417 K/W for PEMB13. | Better suited for ultra-dense portable designs where board area <1.5 mm² per device is required. | Select PUMB13 when footprint reduction outweighs thermal performance needs; verify layout cooling for >50 mW per transistor. |
| EMB13 | Identical functionality and pinout but manufactured by ON Semiconductor; R1 = 4.7 kΩ, R2 = 47 kΩ, same AEC-Q101 qualification. | No functional difference; used interchangeably in existing automotive designs with validated requalification data. | Choose EMB13 for dual-sourcing continuity in long-lifecycle programs; note different marking code ('E13' vs. '45'). |
Compared with PEMB13, PUMB13 trades thermal performance for size reduction while EMB13 offers second-source assurance without design change - making PEMB13 optimal for thermally constrained but space-tolerant automotive modules requiring highest reliability margin.
Availability
PEMB13 is available at Aetrix Electronics and suitable for automotive body control units, industrial programmable logic controllers, and consumer appliance display systems requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for PEMB13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.
The PEMB13 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to reduce bill-of-materials count and improve assembly yield in automotive signal interface and industrial I/O applications.
FAQ
What is the maximum operating temperature for PEMB13 in continuous operation?
The PEMB13 has a maximum junction temperature (Tj) of 150 °C and an ambient temperature range of −65 °C to +150 °C. For continuous operation at full 100 mA per transistor, derating begins above 25 °C ambient per the 417 K/W per-device Rth(j-a) curve - limiting usable ambient to approximately 85 °C at 50 mW per transistor.
Can PEMB13 be used in place of a single PNP transistor without modification?
No - PEMB13 contains two independent PNP transistors with shared ground pins (1 and 4) and cross-connected outputs (pins 3 and 6). Using only one half requires leaving the unused input (pin 2 or 5) open or tied to ground, and the unused output (pin 6 or 3) unconnected; it cannot substitute for a single discrete PNP without circuit redesign.
Is wave soldering supported for PEMB13's SOT666 package?
No - the datasheet explicitly states "reflow soldering is the only recommended soldering method" for PEMB13. Wave soldering is not characterized or guaranteed, and thermal stress from wave profiles may exceed the device's 260 °C peak reflow limit or damage internal die attach integrity.
How does the R2/R1 ratio affect switching behavior in PEMB13?
The R2/R1 ratio of 10 typ sets the effective base current division, determining the transistor's saturation depth and turn-off speed. A higher ratio increases base drive margin but slows turn-off due to stored charge; the 8–12 range ensures reliable saturation at −5 mA load while maintaining toff < 200 ns across temperature and voltage extremes.
PEMB13,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 4.7kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMB13,115 FAQ
1.How can I place an order for PEMB13,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMB13,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMB13,115 reliable?
The price and inventory of PEMB13,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMB13,115 is usually 5 days.
3.What payment methods are accepted for PEMB13,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMB13,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMB13,115?
PEMB13,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMB13,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMB13,115?
For technical support, including PEMB13,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMB13,115 requirements.
6.How does Aetrix verify that PEMB13,115 is sourced from the original manufacturer or authorized distributors?
All PEMB13,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMB13,115 meets industry standards.
7.What is the process for return or replacement of PEMB13,115?
All PEMB13,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMB13,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMB13,115 part is unused and in its original packaging.
Return procedure for PEMB13,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMB13,115 Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

-
PUMD2,115
Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

-
PUMD12,115
Nexperia USA Inc.

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PUMD9,115
Nexperia USA Inc.

-
PUMH9,115
Nexperia USA Inc.

-
PUMD3,115
Nexperia USA Inc.

-
DCX114EU-7-F
Diodes Incorporated

-
PUMD13,115
Nexperia USA Inc.
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