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Nexperia USA Inc. PEMB2,115

Part No.:
PEMB2,115
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SOT-563, SOT-666
Datasheet:
AetrixPEMB2,115.pdf
Description:
TRANS PREBIAS 2PNP 50V SOT666
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,772

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Product details

Overview

PEMB2 from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for −50 V VCEO, −100 mA output current per transistor, with integrated 47 kΩ input bias resistors (R1 = R2 = 47 kΩ). It functions as a dual digital switching element for low-current logic interfacing and peripheral control in space-constrained PCBs.

For engineers reviewing the PEMB2 datasheet, PEMB2 pinout, PEMB2 application, or PEMB2 equivalent, this device is selected for compact dual-PNP switching where built-in biasing eliminates discrete resistors, reduces BOM count, and supports fast digital signal translation in industrial I/O and microcontroller interface circuits.

Technical Context

The PEMB2 integrates two matched PNP transistors with monolithically embedded base bias resistors-R1 (input resistor) and R2 (base-emitter feedback resistor)-configured to enable direct TTL/CMOS-level input drive without external components. Each transistor operates independently with open-base VCEO = −50 V and IO = −100 mA rating.

Its SOT666 package provides six leads in 0.5 mm pitch, with GND pins assigned to both emitters (Pin 1 and Pin 4), enabling independent grounding of each transistor's emitter path. The internal resistor ratio R2/R1 = 1.0 ±0.2 ensures consistent saturation behavior across temperature (−40 °C to +150 °C).

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V - Maximum safe collector-emitter voltage with base open; defines high-side switching headroom in negative-rail applications.
IO −100 mA - Continuous DC output current per transistor; supports driving LEDs, small relays, or logic inputs directly.
R1 / R2 47 kΩ / 47 kΩ - Integrated base-input and base-emitter resistors; eliminate need for 4 external resistors in dual-transistor switch design.
VCE(sat) −150 mV @ IC = −10 mA, IB = −0.5 mA - Low saturation voltage enables efficient switching with minimal power loss and heat generation.
hFE 80 min @ VCE = −5 V, IC = −5 mA - Minimum DC current gain ensures reliable turn-on under worst-case bias conditions.
Ptot (per device) 300 mW @ Tamb ≤ 25 °C - Total thermal dissipation limit on FR4 PCB; derates linearly above 25 °C per 417 K/W junction-to-ambient resistance.

Pinout & Package

SOT666 ultra-small flat-lead plastic package: 1.6 mm × 1.2 mm × 0.55 mm body, 6-pin, 0.5 mm pitch, lead-free and RoHS-compliant. Designed for reflow soldering only on standard FR4 PCBs.

Pin/Terminal Circuit Role Design Meaning
1 GND1 Emiter connection for TR1; must be tied to local ground reference for proper biasing and current return path.
2 I1 Base input for TR1; accepts logic-level signals (e.g., 0 V or −1.6 V typical ON-state); internally pulled through R1 to GND1.
3 O2 Collector output for TR2; active-low switching node; sinks current when TR2 is ON.
4 GND2 Emiter connection for TR2; independent ground terminal allows separate current return paths or isolation between channels.
5 I2 Base input for TR2; functionally identical to I1; driven by second logic signal with same voltage thresholds.
6 O1 Collector output for TR1; active-low switching node; electrically isolated from O2 except via shared PCB layout.

Key Features

Feature Design Value
Dual PNP RET architecture Two fully independent PNP transistors with matched R1/R2 values simplify dual-channel level-shifting and reduce footprint vs. discrete solutions.
Integrated bias network Eliminates four external resistors per channel, cutting component count, placement time, and potential solder joint failure points.
Low VCE(sat) and high hFE Ensures deep saturation at low drive currents (e.g., −0.5 mA base), minimizing power loss and enabling use with weak MCU outputs.
SOT666 thermal performance 417 K/W junction-to-ambient resistance on FR4 allows 300 mW total dissipation-sufficient for sustained 100 mA switching at ambient ≤ 50 °C.

Applications

Industrial I/O Expansion Microcontroller GPIO Buffering

Use Scenario: Driving optocoupler inputs or LED status indicators from PLC output modules operating at −24 V rail.

IC Role / Device Role / Timing Role: Dual active-low switch translating 0 V / −24 V logic levels while providing current gain and isolation.

Use Value: Replaces two discrete PNP+resistor pairs, saving >2.5 mm² PCB area and eliminating resistor placement errors in high-volume assembly.

Use Scenario: Interfacing 3.3 V or 5 V microcontroller GPIOs to −5 V or −12 V analog front-end circuitry requiring inverted enable signals.

IC Role / Device Role / Timing Role: Level-shifting and polarity-inverting buffer with sub-microsecond turn-off delay due to low Cc (3 pF).

Use Value: Enables direct drive from MCU pins without external pull-up resistors or level translators-reducing BOM cost by $0.018/unit at volume.

Low-Power Sensor Interface Legacy Logic Signal Conditioning

Use Scenario: Enabling/disabling analog sensor bias rails (e.g., −3.3 V reference) based on system sleep/wake state in battery-powered edge nodes.

IC Role / Device Role / Timing Role: Low-quiescent-current switch controlling power domain sequencing with <100 nA leakage (ICEO ≤ −1 µA).

Use Value: Achieves <1 µA total standby current per channel-critical for multi-year battery life in IoT endpoint designs.

Use Scenario: Converting legacy −5 V TTL logic outputs to modern 0 V/3.3 V compatible inputs in retrofitted instrumentation systems.

IC Role / Device Role / Timing Role: Active-low translator with VI(on) = −1.6 V and VI(off) = −1.2 V, ensuring noise margin against −0.8 V threshold.

Use Value: Provides deterministic switching without external hysteresis components-eliminating timing jitter in critical control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
PEMD12 NPN/PNP complement; single NPN + single PNP pair; different pinout (SOT666, but I/O assignment differs); R1 = 10 kΩ, R2 = 47 kΩ. Used where mixed-polarity switching (e.g., push-pull driver stage) is required instead of dual-sink configuration. Select PEMD12 only when complementary output polarity (one sourcing, one sinking) is needed-PEMB2 is not pin-compatible.
PEMH2 NPN/NPN version; same SOT666 package; R1 = R2 = 47 kΩ; VCEO = +50 V, IO = +100 mA. Required for positive-rail switching (e.g., 5 V or 12 V logic domains), not negative-rail applications like PEMB2. Choose PEMH2 for +VCC referenced loads; PEMB2 remains optimal for −VEE/ground-referenced sink drivers.

Compared with PEMD12 and PEMH2, PEMB2 uniquely delivers matched dual-PNP functionality with symmetrical −50 V ratings and identical biasing-making it the sole choice for compact, high-reliability negative-rail digital switching where channel matching and layout symmetry matter.

Availability

PEMB2 is available at Aetrix Electronics and suitable for industrial I/O expansion, microcontroller GPIO buffering, low-power sensor interface, and legacy logic signal conditioning requiring stable component supply and long-term manufacturability.

Supply support for PEMB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume, high-reliability discrete and logic devices for automotive, industrial, and consumer markets.

The PEMB2 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line-designed specifically to replace discrete transistor-resistor combinations in digital interface and peripheral driver applications with improved consistency and board-space efficiency.

FAQ

What is the maximum allowable continuous current per channel?

The PEMB2 supports −100 mA DC output current per transistor under Tamb ≤ 25 °C with proper PCB copper area. Derating applies above 25 °C: power dissipation drops linearly at 2.4 mW/°C beyond 25 °C, based on 417 K/W thermal resistance. At 70 °C ambient, max usable current is ~75 mA per channel to stay within 300 mW total device limit.

Can PEMB2 be used in automotive applications?

No. The PEMB2 is explicitly marked as non-automotive qualified in its revision history and legal disclaimers. It has not undergone AEC-Q101 stress testing or qualification for automotive temperature ranges (−40 °C to +125 °C junction), nor does it meet automotive PPAP or reliability requirements. Use only in industrial, consumer, or commercial environments.

How does the built-in R2 resistor affect switching behavior?

R2 provides base-emitter feedback that stabilizes the transistor in saturation and improves turn-off speed by actively discharging the base charge. With R2 = 47 kΩ and R1 = 47 kΩ, the R2/R1 ratio of 1.0 ensures predictable VI(on) (−1.6 V typ.) and VI(off) (−1.2 V typ.), giving ≥0.4 V noise margin-critical for robust operation in noisy industrial settings.

Is there a recommended PCB footprint for SOT666?

Yes. Nexperia specifies a reflow-optimized footprint with 0.55 mm pad length, 0.3 mm pad width, 0.6 mm spacing between inner pads, and 2.75 mm × 2.45 mm overall land pattern. Thermal relief is advised for GND pads (Pins 1 and 4) to ensure even solder melting during reflow. Full dimensions and stencil recommendations are in Figure 11 of the official datasheet.

PEMB2,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Transistor Type:
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
47kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
300mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-666

PEMB2,115 FAQ

1.How can I place an order for PEMB2,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PEMB2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PEMB2,115 reliable?

The price and inventory of PEMB2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMB2,115 is usually 5 days.

3.What payment methods are accepted for PEMB2,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMB2,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PEMB2,115?

PEMB2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PEMB2,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PEMB2,115?

For technical support, including PEMB2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMB2,115 requirements.

6.How does Aetrix verify that PEMB2,115 is sourced from the original manufacturer or authorized distributors?

All PEMB2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMB2,115 meets industry standards.

7.What is the process for return or replacement of PEMB2,115?

All PEMB2,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMB2,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PEMB2,115 part is unused and in its original packaging.

Return procedure for PEMB2,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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