NXP Semiconductors PEMB30,115
- Part No.:
- PEMB30,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- -
- Datasheet:
-
PEMB30,115.pdf
- Description:
- TRANS 2PNP PREBIAS 0.3W SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:12,000
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Product details
Overview
PEMB30 from Nexperia is a PNP/PNP double resistor-equipped transistor (RET) in SOT666 package, integrating two matched PNP transistors with built-in 2.2 kΩ input bias resistors and open R2 configuration. It delivers −100 mA output current per transistor, −50 V VCEO, and operates up to 150 °C junction temperature-designed for low-current peripheral driver and IC input control in space-constrained industrial logic interfaces.
For engineers reviewing the PEMB30 datasheet, PEMB30 pinout, PEMB30 application, or PEMB30 equivalent, this device serves as a cost-saving, component-count-reducing alternative to discrete BC857BS/BC857BV pairs in level-shifting, bus buffering, and digital signal conditioning circuits where dual PNP switching with integrated biasing is required.
Technical Context
The PEMB30 implements two independent PNP transistors sharing no internal connection between bases or collectors-each with its own dedicated 2.2 kΩ base-input resistor (R1) and open-circuit R2 (no second resistor), enabling flexible external biasing or direct TTL/CMOS drive. Its SOT666 footprint supports high-density routing while maintaining thermal resistance of 416 K/W (per device) under free-air conditions.
Designed for DC switching-not linear amplification-the device specifies hFE ≥30 at IC = −20 mA and VCE = −5 V, with VCE(sat) ≤ −150 mV at IC = −10 mA/IB = −0.5 mA, confirming robust saturation behavior for logic-level interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter voltage with base open-enables use in 24 V industrial control rails with margin. |
| IO | −100 mA per transistor: Continuous DC output current rating-supports driving LEDs, small relays, or logic inputs without external current limiting. |
| R1 | 2.2 kΩ (1.54–2.86 kΩ): Integrated base-input resistor-eliminates need for two external bias resistors per transistor, reducing BOM count by 4 parts. |
| Ptot (per device) | 300 mW at Tamb ≤25 °C: Total power dissipation limit-allows dual-transistor operation at ~150 mW each under typical ambient conditions. |
| hFE | ≥30 at IC = −20 mA/VCE = −5 V: Minimum DC current gain-ensures reliable switching with standard microcontroller GPIO drive strength. |
| VCE(sat) | ≤ −150 mV at IC = −10 mA/IB = −0.5 mA: Low saturation voltage-minimizes power loss and voltage drop in active-low switch applications. |
Pinout & Package
SOT666 is a 6-lead surface-mount plastic package with 0.5 mm pitch, 1.7 mm × 2.0 mm body, and exposed pad-compatible footprint. Pin 1 is marked by a notch or dot; device orientation follows JEDEC MO-220 standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND (emitter) TR1 | Emitter terminal of first PNP transistor-common reference node for TR1; tied to system ground in most sink-switch configurations. |
| 2 | input (base) TR1 | Base input of TR1 with integrated 2.2 kΩ pull-up resistor to emitter (Pin 1)-accepts active-low logic signals directly. |
| 3 | output (collector) TR2 | Collector of second PNP transistor-provides active-low switched output; connects to load anode when TR2 is on. |
| 4 | GND (emitter) TR2 | Emitter terminal of second PNP transistor-separate ground return for TR2, enabling independent biasing or isolation. |
| 5 | input (base) TR2 | Base input of TR2 with integrated 2.2 kΩ resistor-electrically identical to Pin 2 but isolated for dual independent control. |
| 6 | output (collector) TR1 | Collector of first PNP transistor-complements Pin 3; used for dual-output logic inversion or complementary switching. |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP RET architecture | Two fully isolated PNP transistors with individual 2.2 kΩ base resistors-enables independent control of two loads without shared bias paths. |
| Reduced pick-and-place cost | Single SOT666 placement replaces four discrete passives + two transistors-lowers assembly time and placement error risk in high-volume SMT lines. |
| IC input control optimization | Guaranteed VCE(sat) ≤ −150 mV ensures <150 mV voltage overhead when sinking MCU GPIO or ASIC enable pins-preserves noise margin. |
| Thermal performance | 416 K/W Rth(j-a) (per device) enables sustained −100 mA operation at 70 °C ambient without heatsinking in typical PCB layouts. |
Applications
| Industrial Bus Buffering | Low-Voltage Level Shifting |
|---|---|
Use Scenario: Isolating and strengthening RS-485 or CAN bus receiver enable signals in factory automation controllers. IC Role / Device Role / Timing Role: Dual PNP switch providing active-low enable control for transceiver direction pins with integrated biasing. Use Value: Eliminates four external resistors and two discrete transistors-reduces layout area by >30% and improves signal integrity via matched switching thresholds. |
Use Scenario: Translating 1.8 V FPGA I/O outputs to 3.3 V or 5 V logic levels for legacy sensor interface ICs. IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower configuration with fixed R1 bias for predictable turn-on threshold. Use Value: Achieves <100 ns propagation delay with ±5% matching between channels-critical for synchronous data capture across dual sensors. |
| Dual LED Driver | Microcontroller Peripheral Interface |
Use Scenario: Driving two status LEDs (e.g., Power OK + Fault) from separate MCU GPIO pins in medical diagnostic equipment. IC Role / Device Role / Timing Role: Dual-sink driver with integrated current-limiting resistors-configurable as constant-current sink via external anode resistors. Use Value: Delivers consistent −20 mA LED current with <5% channel-to-channel mismatch-ensures uniform brightness without trimming. |
Use Scenario: Enabling/disabling analog front-end ICs (e.g., ADCs, DACs) via hardware reset or standby control in portable instrumentation. IC Role / Device Role / Timing Role: Dual active-low reset controller with guaranteed VCE(sat) < −150 mV-ensures full logic-low assertion below 0.2 V. Use Value: Prevents partial activation of peripherals during brown-out conditions-improves system reliability in battery-powered devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857BS | Discrete dual PNP pair without integrated resistors-requires four external 2.2 kΩ bias resistors and occupies larger SOT363 area. | Higher BOM count and layout complexity; suitable only when design requires adjustable R1/R2 values or higher VCEO (>−50 V). | Select BC857BS only if programmable biasing or >−50 V operation is mandatory-otherwise PEMB30 reduces part count and improves repeatability. |
| PUMB30 | Same electrical specs but in smaller SOT363 (SC-88) package-lower thermal resistance (416 K/W) but reduced power handling margin at high ambient temperatures. | Better suited for ultra-compact consumer wearables; less ideal for industrial enclosures above 70 °C ambient due to lower Ptot derating. | Choose PUMB30 for space-constrained designs below 60 °C ambient; PEMB30 preferred for industrial environments requiring sustained −100 mA at elevated temperature. |
Compared with BC857BS and PUMB30, PEMB30 offers optimal balance of integration density, thermal robustness, and production scalability-delivering verified −100 mA switching capability in SOT666 with no external bias components, making it the preferred choice for cost-sensitive, high-volume industrial control modules.
Availability
PEMB30 is available at Aetrix Electronics and suitable for industrial bus buffering, low-voltage level shifting, and microcontroller peripheral interface applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PEMB30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
The PEMB30 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line-engineered specifically to reduce component count and improve manufacturing yield in high-density logic interface and peripheral driver circuits.
FAQ
What is the maximum operating temperature for PEMB30?
The PEMB30 has a maximum junction temperature (Tj) of 150 °C and storage temperature range of −65 °C to +150 °C. Its thermal resistance is 416 K/W (per device) on FR4 PCB, allowing continuous −100 mA operation up to 70 °C ambient with proper copper pour-derating required above that point per Figure 2 in the datasheet.
Can PEMB30 be used in linear amplifier applications?
No-PEMB30 is characterized and specified exclusively for switching operation. Its datasheet provides no hFE linearity, frequency response, or distortion data. The device lacks guaranteed gain flatness or phase margin, and its R1 resistor is optimized for digital drive-not bias stability in analog mode.
Is the R2 resistor truly open, or is it omitted entirely?
R2 is physically omitted-not just open-circuited. The "R2 = open" designation in the quick reference data means no internal resistor connects the base to collector; only R1 (2.2 kΩ) is integrated between base and emitter for each transistor. This allows direct collector feedback if externally added.
How does PEMB30 compare to single RETs like PBSS4041P?
PEMB30 integrates two independent RETs in one package with separate emitters and collectors-enabling true dual-channel isolation. Single RETs like PBSS4041P share emitter connections, limiting use cases to common-emitter configurations. PEMB30 supports split-rail or differential switching not possible with single RETs.
PEMB30,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Resistor - Base (R1):
- -
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- -
- Power - Max:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
PEMB30,115 FAQ
1.How can I place an order for PEMB30,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMB30,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMB30,115 reliable?
The price and inventory of PEMB30,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMB30,115 is usually 5 days.
3.What payment methods are accepted for PEMB30,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMB30,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMB30,115?
PEMB30,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMB30,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMB30,115?
For technical support, including PEMB30,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMB30,115 requirements.
6.How does Aetrix verify that PEMB30,115 is sourced from the original manufacturer or authorized distributors?
All PEMB30,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMB30,115 meets industry standards.
7.What is the process for return or replacement of PEMB30,115?
All PEMB30,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMB30,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMB30,115 part is unused and in its original packaging.
Return procedure for PEMB30,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMB30,115 Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

-
PUMD3-QX
Nexperia USA Inc.

-
PUMD2,115
Nexperia USA Inc.

-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage

-
PUMD12,115
Nexperia USA Inc.

-
PUMD9,115
Nexperia USA Inc.

-
PUMH9,115
Nexperia USA Inc.

-
PUMD3,115
Nexperia USA Inc.

-
DCX114EU-7-F
Diodes Incorporated

-
PUMD13,115
Nexperia USA Inc.
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