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Nexperia USA Inc. PEMB9,115
- Part No.:
- PEMB9,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMB9,115.pdf
- Description:
- TRANS PREBIAS 2PNP 50V SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:4,000
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Product details
Overview
PEMB9 from Nexperia is a PNP/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for −50 V VCEO and −100 mA output current per transistor, with integrated bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It functions as a dual digital switching element for low-current logic interfacing and peripheral control in space-constrained PCBs.
For engineers reviewing the PEMB9 datasheet, PEMB9 pinout, PEMB9 application, or PEMB9 equivalent, this device is selected for compact dual-PNP logic-level switching where built-in biasing eliminates external resistors, reduces BOM count, and supports high-density SMT assembly on FR4 boards.
Technical Context
The PEMB9 integrates two matched PNP transistors with monolithically embedded base bias networks-R1 (input resistor) and R2 (feedback resistor)-enabling direct TTL/CMOS-compatible input drive without external components. Each transistor operates with open-base VCEO = −50 V and IO = −100 mA continuous rating.
Its SOT666 package features six leads in 0.5 mm pitch, with pin 1 (GND1) and pin 4 (GND2) serving as independent emitter terminals, while pins 2/5 are base inputs and pins 6/3 are collector outputs-supporting independent or cascaded switching configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - Maximum safe collector-emitter voltage under open-base condition; defines off-state blocking capability |
| IO | −100 mA - Continuous DC output current per transistor; sets load-driving capacity for digital interface loads |
| R1 | 10 kΩ (7–13 kΩ) - Input bias resistor value; determines base current for logic-level turn-on at ~−0.7 V VI(off) |
| R2/R1 | 4.7 (3.7–5.7) - Fixed feedback ratio; stabilizes operating point against β variation and temperature drift |
| Ptot (per device) | 300 mW at Tamb ≤ 25 °C - Total power dissipation limit on standard FR4 PCB; governs thermal derating above 25 °C |
| hFE | ≥100 at VCE = −5 V, IC = −5 mA - Minimum DC current gain; ensures reliable saturation with low base drive |
| VCE(sat) | ≤ −100 mV at IC = −5 mA, IB = −0.25 mA - Low saturation voltage enables minimal voltage drop in active-switching mode |
Pinout & Package
SOT666 is a 6-lead ultra-small flat-lead surface-mount plastic package measuring 1.6 mm × 1.2 mm × 0.55 mm, optimized for high-density routing and reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emitter terminal of TR1; common reference for first transistor's current path |
| 2 | I1 | Base input of TR1; driven directly by logic signal through internal R1 |
| 3 | O2 | Collector output of TR2; active-low switching node for second stage |
| 4 | GND2 | Emitter terminal of TR2; independent return path enabling isolated dual-channel operation |
| 5 | I2 | Base input of TR2; logic-driven input with dedicated R1–R2 network |
| 6 | O1 | Collector output of TR1; primary active-low output with defined VCE(sat) ≤ −100 mV |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP RET architecture | Two fully independent PNP transistors with matched R1/R2 networks on single die-enables compact dual-channel logic inversion without layout coupling |
| Integrated bias network | R1 = 10 kΩ ±30 %, R2 = 47 kΩ - eliminates four external resistors, reducing PCB area and placement cost |
| Low-input-threshold switching | VI(on) = −0.8 V typical at IC = −1 mA - compatible with 3.3 V and 5 V CMOS/TTL outputs without level shifting |
| Thermal robustness | Rth(j-a) = 417 K/W (per device) on FR4 - supports stable operation up to 125 °C ambient with appropriate board copper |
| High-reliability packaging | SOT666 qualified per JEDEC standards with tin-plated terminations - ensures repeatable reflow yield and long-term interconnect integrity |
Applications
| LED Driver Interface | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving multiple low-current indicator LEDs from a 3.3 V microcontroller with limited GPIO sink capability. IC Role / Device Role / Timing Role: Dual active-low switch providing parallel LED cathode control with integrated current limiting via VCE(sat) and external series resistors. Use Value: Eliminates need for eight discrete resistors and transistors across two channels, cutting BOM count by 67 % and saving 2.5 mm² PCB area. |
Use Scenario: Extending digital output capability of an MCU with limited drive strength to control external enable lines or reset signals. IC Role / Device Role / Timing Role: Level-translating buffer that inverts and amplifies weak GPIO outputs to drive higher-capacitance or higher-voltage loads. Use Value: Ensures clean 0 V–5 V logic transitions with <100 ns propagation delay (derived from fT = 180 MHz), preventing metastability in timing-critical resets. |
| Logic-Level Translator | Low-Power Sensor Interface |
Use Scenario: Converting 1.8 V LVTTL signals to −5 V referenced control lines in mixed-voltage industrial modules. IC Role / Device Role / Timing Role: Inverting translator using PNP emitter-follower configuration with grounded emitters and pull-up to negative rail. Use Value: Achieves VI(off) ≤ −0.5 V and VI(on) ≥ −0.8 V-guaranteeing >300 mV noise margin across −40 °C to +100 °C operating range. |
Use Scenario: Enabling/disabling analog sensor supply rails based on system sleep state in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Low-quiescent dual switch controlling VCC to two sensors, leveraging ultra-low ICEO ≤ −5 µA at 150 °C junction temperature. Use Value: Reduces standby current by >95 % versus discrete solutions, extending battery life by 11 weeks in 10 µA average sleep-mode systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-PNP switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMD9 | NPN/PNP complement; shares same SOT666 package and R1/R2 values but opposite polarity per channel | Required when one channel needs NPN sink and the other PNP source behavior (e.g., push-pull driver) | Select PEMD9 only if mixed-polarity switching is needed; not interchangeable with PEMB9 in same-polarity designs |
| PEMH9 | NPN/NPN version; identical footprint and biasing but both transistors are NPN, requiring positive-side switching topology | Suitable for high-side load switching with positive supply rails, unlike PEMB9's native low-side (emitter-grounded) use | Choose PEMH9 when driving loads referenced to VCC; requires redesign of bias network and PCB layout |
Compared with PEMD9 and PEMH9, the PEMB9 uniquely provides dual PNP functionality in a single SOT666 package-making it the only option for compact, ground-referenced active-low switching without polarity conversion or external bias components.
Availability
PEMB9 is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller GPIO expansion, logic-level translation, and low-power sensor control requiring stable component supply and consistent SMT assembly performance.
Supply support for PEMB9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume, high-reliability discrete and logic devices for consumer, industrial, and communications markets.
The PEMB9 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line-designed specifically to replace discrete transistor-resistor combinations in digital interface and peripheral driver applications with guaranteed matching and reduced footprint.
FAQ
What is the maximum allowable junction temperature for PEMB9?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in Table 5 of the datasheet. Operation beyond this limit risks permanent degradation of hFE, leakage currents, and bond wire integrity. Derating begins at 25 °C ambient, with total device power dissipation dropping linearly to zero at 125 °C ambient per Figure 1.
Can PEMB9 be used in automotive applications?
No-PEMB9 is explicitly marked as non-automotive qualified in the revision history (Table 9). It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation. Nexperia states in Section 15 that inclusion in automotive systems is at the customer's sole risk and voids all warranties.
How does the R2/R1 ratio affect switching behavior?
The R2/R1 ratio of 4.7 sets the internal feedback factor that stabilizes the transistor's operating point against β variation and temperature drift. A higher ratio increases base current margin during turn-on but raises VI(on); the 3.7–5.7 tolerance band ensures functional consistency across production lots without requiring external trimming.
Is reflow soldering mandatory for PEMB9?
Yes-Section 8 specifies reflow soldering as the *only recommended* method. Wave or hand soldering is not supported due to thermal limitations of the SOT666 package and internal resistor metallization. The datasheet mandates tin-plated terminations and FR4 PCB mounting per JEDEC J-STD-020 moisture sensitivity level MSL3 requirements.
PEMB9,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMB9,115 FAQ
1.How can I place an order for PEMB9,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMB9,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMB9,115 reliable?
The price and inventory of PEMB9,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMB9,115 is usually 5 days.
3.What payment methods are accepted for PEMB9,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMB9,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMB9,115?
PEMB9,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMB9,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMB9,115?
For technical support, including PEMB9,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMB9,115 requirements.
6.How does Aetrix verify that PEMB9,115 is sourced from the original manufacturer or authorized distributors?
All PEMB9,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMB9,115 meets industry standards.
7.What is the process for return or replacement of PEMB9,115?
All PEMB9,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMB9,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMB9,115 part is unused and in its original packaging.
Return procedure for PEMB9,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMB9,115 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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