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Nexperia USA Inc. PEMD10,115
- Part No.:
- PEMD10,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMD10,115.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:3,185
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Product details
Overview
PEMD10 from Nexperia is a resistor-equipped double transistor (RET) integrating one NPN and one PNP bipolar junction transistor in a single SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with built-in bias resistors R1 = 2.2 kΩ and R2 = 47 kΩ (R2/R1 ≈ 21), used to drive low-current digital peripheral inputs while reducing external component count.
For engineers reviewing the PEMD10 datasheet, PEMD10 pinout, PEMD10 application, or PEMD10 equivalent, this device serves as a space-optimized, bias-resistor-integrated replacement for discrete NPN+PNP pairs in level-shifting, logic interfacing, and IC input control circuits where board area and assembly cost are critical.
Technical Context
The PEMD10 integrates two complementary transistors-TR1 (NPN) and TR2 (PNP)-each with dedicated on-chip base biasing networks (R1 and R2). TR1 operates with positive input voltage up to +12 V and TR2 supports negative input voltage down to −12 V, enabling bidirectional signal conditioning in mixed-polarity digital systems.
Each transistor exhibits DC current gain (hFE) ≥100 at IC = 10 mA, VCE = 5 V (NPN) or −5 V (PNP), and collector-emitter saturation voltage ≤100 mV at IC/IB = 20, supporting reliable switching in low-voltage logic interface applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V industrial logic and 3.3/5 V microcontroller I/O protection circuits. |
| IO | 100 mA - Continuous output current per transistor; sufficient to drive LED indicators, small relays, or CMOS/TTL input loads without external amplification. |
| R1 | 2.2 kΩ ±30% - Integrated base input resistor; sets nominal base current for direct connection to 3.3 V or 5 V logic outputs without external biasing. |
| R2/R1 ratio | 21 - Fixed internal feedback ratio; stabilizes operating point against β variation and temperature drift in saturated-switch applications. |
| Ptot (per device) | 300 mW at Tamb ≤ 25 °C - Total power dissipation limit; defines thermal derating envelope for dual-transistor operation on FR4 PCBs. |
| fT (NPN) | 230 MHz - Transition frequency of TR1; ensures adequate bandwidth for fast digital edge transitions up to ~30 MHz clock rates. |
| VI(on) | 0.75–1.1 V - On-state input voltage threshold; guarantees reliable turn-on with standard CMOS logic high levels (≥2.4 V) while minimizing shoot-through risk. |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body, ultra-small footprint optimized for high-density PCB layouts.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN); common reference node for first transistor's current path. |
| 2 | I1 | Base input for TR1 (NPN); connected internally to R1 and R2 network; accepts positive logic signals. |
| 3 | O2 | Collector output for TR2 (PNP); active-low switching node for sink-type loads. |
| 4 | GND2 | Emiter connection for TR2 (PNP); separate ground reference enabling independent biasing of complementary transistor. |
| 5 | I2 | Base input for TR2 (PNP); connected internally to R1 and R2 network; accepts negative or low-side logic signals. |
| 6 | O1 | Collector output for TR1 (NPN); active-high switching node for source-type loads. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated NPN+PNP pair | Single-component solution replaces two discrete transistors and four external bias resistors, cutting BOM count by ≥75%. |
| Matched R1/R2 network | Factory-trimmed 2.2 kΩ / 47 kΩ resistor pair ensures consistent DC biasing across temperature and process variation. |
| Low VCE(sat) | ≤100 mV at IC/IB = 20 - Minimizes conduction loss and self-heating during sustained switching, improving system efficiency. |
| High hFE | ≥100 at 10 mA - Enables robust saturation with minimal base drive current, easing drive requirements from weak GPIOs. |
| Ultra-small SOT666 | 1.6 mm × 1.2 mm footprint - Saves >60% board area versus SO-8 or SC-70 dual-transistor alternatives. |
Applications
| LED Indicator Driver | Microcontroller I/O Expander |
|---|---|
|
Use Scenario: Driving multiple status LEDs from a resource-constrained MCU with limited GPIO count and no external driver ICs. IC Role / Device Role / Timing Role: Dual-transistor switch providing simultaneous active-high (O1) and active-low (O2) LED control paths from shared logic inputs. Use Value: Eliminates need for discrete NPN/PNP pairs and four bias resistors per channel, reducing layout complexity and assembly cost by 3× per LED channel. |
Use Scenario: Extending GPIO capability of an ARM Cortex-M0+ MCU to interface with legacy 5 V TTL peripherals requiring both sourcing and sinking capability. IC Role / Device Role / Timing Role: Level-shifting buffer translating 3.3 V logic outputs to 5 V-compatible drive strength while maintaining rail-to-rail swing. Use Value: Delivers 100 mA sink/source per channel with <100 mV saturation drop, ensuring clean logic thresholds and noise margin compliance per JEDEC Std 8-1A. |
| Digital Input Conditioner | Logic-Level Translator |
|
Use Scenario: Cleaning noisy or floating inputs to an FPGA configuration bank where false triggering must be avoided. IC Role / Device Role / Timing Role: Schmitt-trigger-like input conditioning using internal resistor feedback (R2/R1 = 21) to enhance noise immunity and hysteresis. Use Value: Provides VI(on)/VI(off) separation of ≥0.5 V at 25 °C, rejecting ESD-induced glitches and contact bounce without external RC networks. |
Use Scenario: Bidirectional voltage translation between 1.8 V sensor interface and 3.3 V host processor in portable medical devices. IC Role / Device Role / Timing Role: Asymmetric dual-transistor stage enabling unidirectional level shift from low-voltage domain to higher-voltage domain with controlled rise/fall times. Use Value: fT of 230 MHz (NPN) and 180 MHz (PNP) supports clean 25 MHz data transfer with <5 ns propagation delay, meeting I²C Fast-mode Plus timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMH10 | NPN/NPN configuration instead of NPN/PNP; identical R1/R2 values and SOT666 package. | Used when two sourcing outputs are required (e.g., dual LED anode drivers), not complementary drive. | Select PEMH10 only if circuit requires matched NPN behavior on both channels; not suitable for push-pull or level-shift topologies needing polarity inversion. |
| PEMB10 | PNP/PNP configuration; same bias resistor values and package; lacks NPN section entirely. | Applicable in dual-sink applications such as driving multiple open-collector bus lines or relay coils referenced to VCC. | Choose PEMB10 when both outputs must sink current relative to a common supply rail; incompatible with source-driven loads or mixed-sourcing/sinking architectures. |
Compared with PEMH10 and PEMB10, the PEMD10 uniquely provides true complementary switching (source + sink) in one package-enabling push-pull output stages, bidirectional level translation, and compact logic inverters that neither NPN-only nor PNP-only RETs can replicate without additional components.
Availability
PEMD10 is available at Aetrix Electronics and suitable for LED indicator systems, microcontroller I/O expansion, digital input conditioning, and logic-level translation requiring stable component supply and long-term production continuity.
Supply support for PEMD10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, mobile, and computing markets.
The PEMD10 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete transistor-resistor combinations in space-constrained digital interface and peripheral driver applications.
FAQ
What is the maximum allowable input voltage applied to I1 or I2 pins?
The PEMD10 supports +12 V maximum positive input voltage at I1 (TR1 base) and −12 V maximum negative input voltage at I2 (TR2 base), as specified in the Limiting Values table. Exceeding these voltages risks permanent damage to the internal bias resistors or transistor junctions, even with current limiting.
Can PEMD10 be used in linear amplifier mode?
No-the PEMD10 is characterized and qualified exclusively for switching operation. Its built-in R1/R2 network fixes the base bias point, and parameters like hFE and fT are specified under saturated-switch conditions. Linear gain stability, distortion, and thermal performance are not guaranteed or tested.
Is the SOT666 package lead-free and RoHS-compliant?
Yes-Nexperia confirms the PEMD10 SOT666 package meets RoHS Directive 2011/65/EU and is fully lead-free, with matte tin (Sn) termination finish and reflow-compatible soldering profile per J-STD-020.
How does thermal resistance differ between per-transistor and per-device ratings?
Rth(j-a) is 625 K/W per transistor but 417 K/W for the full device because heat from both transistors shares the same die substrate and package thermal path. This means total power dissipation must stay within 300 mW (not 2 × 200 mW) to avoid exceeding Tj = 150 °C on FR4 PCBs.
PEMD10,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMD10,115 FAQ
1.How can I place an order for PEMD10,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMD10,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMD10,115 reliable?
The price and inventory of PEMD10,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMD10,115 is usually 5 days.
3.What payment methods are accepted for PEMD10,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMD10,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMD10,115?
PEMD10,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMD10,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMD10,115?
For technical support, including PEMD10,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMD10,115 requirements.
6.How does Aetrix verify that PEMD10,115 is sourced from the original manufacturer or authorized distributors?
All PEMD10,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMD10,115 meets industry standards.
7.What is the process for return or replacement of PEMD10,115?
All PEMD10,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMD10,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMD10,115 part is unused and in its original packaging.
Return procedure for PEMD10,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMD10,115 Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
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Toshiba Semiconductor and Storage
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Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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