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NXP Semiconductors PEMD12,115
- Part No.:
- PEMD12,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMD12,115.pdf
- Description:
- NEXPERIA PEMD12 - SMALL SIGNAL B
- Quantity:
- Payment:
- Shipping:
Inventory:3,230,530
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Product details
Overview
PEMD12 from Nexperia is an NPN/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with built-in bias resistors R1 = R2 = 47 kΩ. It integrates complementary switching transistors for digital logic interfacing and low-current peripheral driving in space-constrained PCB layouts.
For engineers reviewing the PEMD12 datasheet, PEMD12 pinout, PEMD12 application, or PEMD12 equivalent, this device serves as a drop-in replacement for discrete NPN+PNP pairs in level-shifting, bus buffering, and microcontroller I/O expansion circuits where reduced component count and simplified biasing are critical.
Technical Context
The PEMD12 integrates two monolithically fabricated transistors - TR1 (NPN) and TR2 (PNP) - each with dedicated on-chip base bias resistors (R1, R2), enabling direct TTL/CMOS-compatible input drive without external resistors. The dual-transistor topology supports push-pull or complementary switching configurations.
It operates across –65 °C to +150 °C ambient, with thermal resistance Rth(j-a) = 417 K/W (per device) on FR4 PCB, and supports reflow-only soldering. Input voltage thresholds VI(on) = 1.6–3.0 V (TR1) and VI(off) = 0.8–1.2 V ensure robust noise immunity in digital control paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 3.3 V, 5 V, and 24 V logic-level interface rails. |
| IO | 100 mA - Continuous output current per transistor; sufficient for LED drivers, relay coils, and small-signal MOSFET gate control. |
| R1 / R2 | 47 kΩ ±22% - Integrated base bias resistors eliminate external components and reduce layout area by ~30% vs. discrete solutions. |
| hFE | 80 min - DC current gain at IC = 5 mA, VCE = 5 V; ensures reliable saturation with standard MCU GPIO drive strength. |
| VCE(sat) | 150 mV max - Low saturation voltage at IC = 10 mA, IB = 0.5 mA; minimizes power loss in high-duty-cycle switching. |
| fT | 230 MHz (TR1), 180 MHz (TR2) - Transition frequency confirms suitability for signal switching up to ~10 MHz digital edges. |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height. Ultra-small footprint ideal for wearables, IoT sensors, and dense MCU peripheral interfaces.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN); common reference for first transistor's current path. |
| 2 | I1 | Base input for TR1 (NPN); accepts logic-high signals directly from 3.3 V/5 V MCUs without series resistor. |
| 3 | O2 | Collector output for TR2 (PNP); active-low switching node for sourcing current when TR2 is on. |
| 4 | GND2 | Emiter connection for TR2 (PNP); independent ground return for second transistor's current loop. |
| 5 | I2 | Base input for TR2 (PNP); driven low to activate TR2; compatible with open-drain or inverted logic outputs. |
| 6 | O1 | Collector output for TR1 (NPN); active-high switching node for sinking current when TR1 is on. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Matched R1/R2 = 1 ±20% eliminates external resistors and prevents mismatch-induced gain variation. |
| Dual polarity switching | Co-packaged NPN+PNP enables complementary output stages without inter-device timing skew or layout mismatch. |
| Low thermal resistance | Rth(j-a) = 417 K/W (device-level) supports 300 mW total dissipation at Tamb ≤ 25 °C on standard FR4. |
| ESD robustness | Class 2 HBM (≥2 kV) per JESD22-A114 - withstands handling and board assembly without additional protection. |
Applications
| LED Driver Interface | Microcontroller I/O Expander |
|---|---|
|
Use Scenario: Driving bi-color LEDs or status indicators from low-drive-strength MCU pins. IC Role / Device Role / Timing Role: Dual-transistor switch providing sink (TR1) and source (TR2) capability for common-cathode/anode LED configurations. Use Value: Eliminates need for four discrete transistors and eight bias resistors; reduces BOM count by 75% and PCB area by >40%. |
Use Scenario: Extending GPIO count for industrial sensor nodes using 3.3 V microcontrollers. IC Role / Device Role / Timing Role: Level-shifting and current-boosting buffer between MCU I/O and higher-current peripherals (e.g., optocouplers, small relays). Use Value: VI(on)/VI(off) thresholds ensure clean logic transitions at 3.3 V; 100 mA per channel supports multiple parallel loads. |
| Bus Line Receiver | Power Sequencing Control |
|
Use Scenario: Receiving open-collector or open-drain bus signals (e.g., I²C pull-up assist, SMBus alert lines). IC Role / Device Role / Timing Role: PNP-side (TR2) acts as active-pull-up; NPN-side (TR1) provides fast discharge path for bus capacitance. Use Value: fT ≥ 180 MHz ensures sub-10 ns rise/fall times; Cc ≤ 3 pF minimizes bus loading on 400 kHz I²C links. |
Use Scenario: Enabling/disabling power rails in multi-voltage systems (e.g., FPGA core vs. I/O bank sequencing). IC Role / Device Role / Timing Role: Complementary pair controls enable inputs of LDOs or load switches with precise turn-on/turn-off ordering. Use Value: Matched VCE(sat) and hFE between TR1/TR2 ensures consistent timing margins across temperature (–40 °C to +100 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMH2 | NPN/NPN configuration; identical R1/R2 = 47 kΩ, same SOT666 package and 50 V/100 mA rating. | Used where dual-sink (not complementary) drive is required - e.g., parallel LED strings or redundant logic buffers. | Select PEMH2 only when both outputs must sink current; not suitable for push-pull or sourcing functions. |
| PEMB2 | PNP/PNP configuration; same package, voltage/current ratings, and resistor values as PEMD12. | Applicable in high-side switching arrays or inverted logic fan-out where dual sourcing is needed. | Choose PEMB2 for active-high control topologies; requires inverted input logic vs. PEMD12's mixed polarity support. |
Compared with PEMH2 and PEMB2, the PEMD12 uniquely provides integrated NPN+PNP complementarity in one die - enabling true push-pull operation, bidirectional bus control, and compact level translation without external inversion logic or layout asymmetry.
Availability
PEMD12 is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller I/O expansion, bus line receivers, and power sequencing control requiring stable component supply and long-term industrial availability.
Supply support for PEMD12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a leading global semiconductor expert in discrete, logic, and MOSFET devices, founded as a spin-off from Philips and headquartered in Nijmegen, Netherlands.
The PEMD12 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete transistor-resistor combinations in digital interface and peripheral control applications - prioritizing miniaturization, reliability, and manufacturing efficiency.
FAQ
What is the maximum operating junction temperature for PEMD12?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in the Absolute Maximum Ratings table. Derating begins above 25 °C ambient, with total device power dissipation limited to 300 mW at Tamb ≤ 25 °C on standard FR4 PCB. Thermal resistance is 417 K/W (junction-to-ambient, per device), so sustained operation near Tj max requires careful thermal design and airflow consideration.
Can PEMD12 be used in automotive applications?
No - the PEMD12 is explicitly marked as non-automotive qualified in the datasheet revision history and legal disclaimers. It has not undergone AEC-Q101 stress testing or automotive-grade qualification. For automotive use, Nexperia offers separate AEC-Q101 qualified RETs such as the PUMD12 series; PEMD12 must not be deployed in safety-critical or vehicle-mounted systems.
How does the R2/R1 ratio affect switching behavior?
The R2/R1 ratio is specified as 0.8–1.2 (typical = 1.0), ensuring matched base biasing between TR1 (NPN) and TR2 (PNP). This tight matching maintains symmetrical turn-on/turn-off characteristics in push-pull configurations, minimizing shoot-through risk and reducing propagation delay mismatch to <5 ns over temperature. Deviations outside this range may cause unbalanced saturation or incomplete cutoff.
Is reflow soldering mandatory for PEMD12?
Yes - the datasheet states "reflow soldering is the only recommended soldering method" due to thermal sensitivity of the SOT666 package and internal die attach. Wave soldering or hand soldering risks exceeding peak temperature limits (260 °C max for 10 s), potentially damaging the integrated resistors or bond wires. Reflow profile must comply with IPC/JEDEC J-STD-020, with preheat, soak, and ramp rates strictly observed.
PEMD12,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 47kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMD12,115 FAQ
1.How can I place an order for PEMD12,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMD12,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMD12,115 reliable?
The price and inventory of PEMD12,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMD12,115 is usually 5 days.
3.What payment methods are accepted for PEMD12,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMD12,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMD12,115?
PEMD12,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMD12,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMD12,115?
For technical support, including PEMD12,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMD12,115 requirements.
6.How does Aetrix verify that PEMD12,115 is sourced from the original manufacturer or authorized distributors?
All PEMD12,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMD12,115 meets industry standards.
7.What is the process for return or replacement of PEMD12,115?
All PEMD12,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMD12,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMD12,115 part is unused and in its original packaging.
Return procedure for PEMD12,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMD12,115 Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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