Nexperia USA Inc. PEMD12,315
- Part No.:
- PEMD12,315
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMD12,315.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:7,625
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Product details
Overview
PEMD12 from Nexperia is an NPN/PNP resistor-equipped double transistor (RET) in SOT666 package, integrating two complementary bias-resistor-transistors - TR1 (NPN) and TR2 (PNP) - each rated for 50 V VCEO, 100 mA IO, with matched R1 = R2 = 47 kΩ built-in bias resistors. It serves as a compact, dual-polarity digital switching element for level translation and low-current drive in space-constrained logic interface circuits.
For engineers reviewing the PEMD12 datasheet, PEMD12 pinout, PEMD12 application, or PEMD12 equivalent, this device is selected for simplified digital output buffering, IC input control, and replacement of discrete NPN+PNP pairs where board area, BOM count, and pick-and-place cost reduction are critical design objectives.
Technical Context
The PEMD12 integrates two monolithically isolated transistors on a single die: TR1 is an NPN transistor with base biased via R1–R2 network to ground, while TR2 is a PNP transistor with its own identical R1–R2 network referenced to its emitter (GND2). Both transistors share no internal connection beyond common package substrate, enabling independent operation with polarity-separated signal paths.
Each transistor exhibits hFE ≥ 80 at IC = 5 mA, VCE = 5 V (NPN) or −5 V (PNP), and VCE(sat) ≤ 150 mV at IC = 10 mA / IB = 0.5 mA (NPN) or corresponding negative conditions (PNP), supporting reliable saturation switching in 3.3 V and 5 V logic domains.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V per transistor - supports rail-to-rail switching up to 5 V logic with margin; safe for 3.3 V/5 V I/O interfacing |
| IO | 100 mA max per transistor - sufficient for driving LEDs, small relays, or logic inputs without external amplification |
| R1 / R2 | 47 kΩ ±24% - provides fixed base current limiting; eliminates need for external bias resistors in standard digital drive configurations |
| hFE | ≥80 at 5 mA collector current - ensures robust turn-on with typical microcontroller GPIO outputs (2–4 mA source/sink) |
| VCE(sat) | ≤150 mV at IC = 10 mA - minimizes power loss and voltage drop in saturated switching applications |
| fT | 230 MHz (NPN), 180 MHz (PNP) - enables use in high-speed digital switching up to ~10–20 MHz toggle rates |
| Ptot | 300 mW per device - allows dual-transistor operation under ambient ≤25 °C with FR4 PCB mounting |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height; ultra-flat lead profile optimized for automated assembly and high-density routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter terminal of NPN transistor TR1; reference node for TR1's R1–R2 bias network |
| 2 | I1 | Base input of TR1 (NPN); accepts positive logic signals; internally connected to R1 |
| 3 | O2 | Collector output of TR2 (PNP); active-low switching node; sinks current when TR2 is on |
| 4 | GND2 | Emiter terminal of PNP transistor TR2; reference node for TR2's R1–R2 bias network |
| 5 | I2 | Base input of TR2 (PNP); accepts negative-logic or inverted signals; internally connected to R2 |
| 6 | O1 | Collector output of TR1 (NPN); active-high switching node; sources current when TR1 is on |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN/PNP topology | Enables complementary push-pull or level-shifting functions in one footprint - replaces two discrete RETs or four passives |
| Built-in 47 kΩ bias resistors | Eliminates four external resistors per pair; reduces layout complexity and improves traceability of biasing network |
| 100 mA per transistor rating | Supports direct drive of optocouplers, small solenoids, and logic-family inputs without additional gain stages |
| SOT666 ultra-small package | 0.96 mm² footprint - saves >60% board area vs. two SOT363 devices; compatible with fine-pitch reflow processes |
| Matched R1/R2 ratio (0.8–1.2) | Ensures consistent turn-on thresholds between NPN and PNP sections - critical for balanced timing in bidirectional interfaces |
Applications
| LED Driver Interface | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving dual-color (red/green) LED indicators from a single 3.3 V MCU port with active-high and active-low control. IC Role / Device Role / Timing Role: PEMD12 acts as a polarity-splitting buffer: TR1 sources current for anode-connected LED; TR2 sinks current for cathode-connected LED. Use Value: Eliminates need for separate NPN and PNP transistors plus eight bias resistors - reduces component count by 6 parts and layout area by 45%. |
Use Scenario: Extending limited GPIO count on an ARM Cortex-M0+ MCU to control six independent enable lines for peripheral ICs. IC Role / Device Role / Timing Role: Each PEMD12 provides two independently controllable switch nodes (O1/O2), allowing one device to manage two peripherals with opposite enable polarities. Use Value: Enables full utilization of 3.3 V GPIOs without level shifters or external inverters - maintains <100 ns propagation delay across temperature range. |
| Logic-Level Translator | Low-Power Sensor Interface |
|
Use Scenario: Converting 1.8 V logic outputs from an ADC to 5 V-compatible signals for legacy analog front-end circuitry. IC Role / Device Role / Timing Role: TR1 (NPN) switches 5 V rail under 1.8 V base drive; TR2 (PNP) provides inverted path for complementary signaling. Use Value: Achieves rail-to-rail translation with <200 mV VOL/VOH margins at 10 mA load - no external pull-ups required. |
Use Scenario: Enabling/disabling low-quiescent-current sensors (e.g., Hall effect or thermistor bridges) in battery-powered IoT nodes. IC Role / Device Role / Timing Role: PEMD12 acts as a dual-enable switch: TR1 powers sensor VCC; TR2 grounds sensor reference or output buffer. Use Value: Reduces standby current to <1 µA per channel via complete power gating - extends coin-cell life by >3× vs. resistor-based enable. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMH2 | NPN/NPN dual RET; same SOT666 package, identical R1/R2 values, but lacks PNP section | Only suitable for dual-sourcing or parallel-drive applications - cannot replace PEMD12 in push-pull or polarity-mixed designs | Select when both outputs require active-high drive and shared emitter reference is acceptable |
| PEMB2 | PNP/PNP dual RET; same package and bias resistors, but no NPN section | Supports dual-sinking only - incompatible with applications requiring sourcing capability or complementary outputs | Choose for dual active-low control where ground-referenced loads dominate the system architecture |
Compared with PEMH2 and PEMB2, the PEMD12 uniquely delivers true complementary switching in one device - enabling single-package solutions for bidirectional signal control, level translation, and power-gated sensor interfaces that neither alternative can replicate without added discretes.
Availability
PEMD12 is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller GPIO expansion, logic-level translation, and low-power sensor interface applications requiring stable component supply, long-term manufacturability, and RoHS-compliant SMT assembly.
Supply support for PEMD12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies - delivering high-performance, reliable, and scalable components for automotive, industrial, and consumer electronics.
The PEMD12 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to reduce bill-of-materials complexity and PCB real estate in digital interface and low-power switching applications.
FAQ
What is the maximum continuous current per transistor in the PEMD12?
The PEMD12 supports a maximum continuous output current of 100 mA per transistor under Tamb ≤ 25 °C with FR4 PCB mounting. Derating applies above 25 °C ambient: total device power dissipation drops linearly to 0 mW at 150 °C junction temperature, per the 417 K/W thermal resistance specification.
Can the PEMD12 be used with 1.8 V logic inputs?
Yes - the NPN section (TR1) turns on with VI(on) = 1.6 V (typical) at IC = 2 mA, and the PNP section (TR2) activates with VI(on) = −1.6 V (typical) under same conditions. This allows direct interfacing with 1.8 V CMOS outputs without level shifting, provided input current remains within ±110 μA limits per base terminal.
Is there electrical isolation between the NPN and PNP sections?
No internal galvanic isolation exists - both transistors share the same silicon die and substrate. However, their emitter terminals (GND1 and GND2) are electrically separate pins, enabling independent grounding or referencing to different rails. No current flows between TR1 and TR2 except through external circuitry.
What is the marking code for the PEMD12 on the SOT666 package?
The PEMD12 is marked with the code "D2" on the top surface of the SOT666 package, as specified in Table 4 of the official Nexperia data sheet dated 28 December 2022. This two-character laser marking is visible under 20× magnification and conforms to JEDEC standards for SMT identification.
PEMD12,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 47kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMD12,315 FAQ
1.How can I place an order for PEMD12,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMD12,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMD12,315 reliable?
The price and inventory of PEMD12,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMD12,315 is usually 5 days.
3.What payment methods are accepted for PEMD12,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMD12,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMD12,315?
PEMD12,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMD12,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMD12,315?
For technical support, including PEMD12,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMD12,315 requirements.
6.How does Aetrix verify that PEMD12,315 is sourced from the original manufacturer or authorized distributors?
All PEMD12,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMD12,315 meets industry standards.
7.What is the process for return or replacement of PEMD12,315?
All PEMD12,315 units undergo pre-shipment inspection (PSI). If there is an issue with PEMD12,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMD12,315 part is unused and in its original packaging.
Return procedure for PEMD12,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMD12,315 Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

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PUMD2,115
Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

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PUMD12,115
Nexperia USA Inc.

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PUMD9,115
Nexperia USA Inc.

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PUMH9,115
Nexperia USA Inc.

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PUMD3,115
Nexperia USA Inc.

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DCX114EU-7-F
Diodes Incorporated

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PUMD13,115
Nexperia USA Inc.
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