Nexperia USA Inc. PEMD13,115
- Part No.:
- PEMD13,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMD13,115.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:1,235
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Product details
Overview
PEMD13 from Nexperia is a resistor-equipped double transistor (RET) integrating one NPN and one PNP bipolar junction transistor in a single SOT666 package, with built-in bias resistors R1 = 4.7 kΩ and R2 = 47 kΩ, rated for 50 V VCEO, 100 mA output current per transistor, and operating across –65 °C to +150 °C ambient temperature - used for bidirectional digital signal interfacing in space-constrained logic-level translation circuits.
For engineers reviewing the PEMD13 datasheet, PEMD13 pinout, PEMD13 application, or PEMD13 equivalent, this device serves as a compact, bias-resistor-integrated solution for replacing discrete NPN+PNP pairs in low-current peripheral drivers, IC input control, and level-shifting nodes where PCB area and BOM count reduction are critical.
Technical Context
The PEMD13 implements two independent transistors - TR1 (NPN) and TR2 (PNP) - each with dedicated base biasing networks (R1 and R2), enabling direct TTL/CMOS-compatible switching without external resistors. The NPN section features hFE ≥ 100 at IC = 10 mA and VCE = 5 V, while the PNP section delivers comparable gain under negative-polarity conditions.
Both transistors share thermal coupling within the ultra-small SOT666 package (1.6 mm × 1.2 mm × 0.55 mm), with per-device total power dissipation rated at 300 mW at Tamb ≤ 25 °C and junction temperature limited to 150 °C. Input voltage thresholds are specified: VI(on) = 0.9–1.3 V (TR1), VI(off) = 0.5–0.6 V (TR1), supporting robust noise margin in digital control paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V and 36 V logic-supplied systems with safety margin. |
| IO | 100 mA - Continuous output current per transistor; sufficient for driving LEDs, small relays, or logic inputs without external amplification. |
| R1 | 4.7 kΩ - Integrated base-input resistor; sets standard TTL-compatible input impedance and eliminates need for external pull-up/down components. |
| R2/R1 ratio | 10 - Fixed internal bias network ratio; ensures stable saturation and predictable turn-on behavior across temperature and process variation. |
| fT (TR1) | 230 MHz - Transition frequency of NPN transistor; supports high-speed digital switching up to ~30 MHz with adequate gain margin. |
| VCE(sat) | 100 mV - Collector-emitter saturation voltage at IC = 5 mA / IB = 0.25 mA; minimizes conduction loss in active-switching applications. |
| Ptot (device) | 300 mW - Total power dissipation limit at 25 °C ambient; defines thermal design envelope when both transistors operate simultaneously. |
Pinout & Package
SOT666 plastic surface-mount package: 6-lead, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height, designed for reflow soldering only on FR4 PCBs with single-sided copper.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter connection for TR1 (NPN); common reference node for NPN side, not internally tied to GND2. |
| 2 | I1 | Base input for TR1 (NPN); accepts logic-high signals directly; biased via internal R1/R2 network. |
| 3 | O2 | Collector output for TR2 (PNP); active-low switching node; sinks current when TR2 is on. |
| 4 | GND2 | Emiter connection for TR2 (PNP); separate ground reference for PNP side, electrically isolated from GND1. |
| 5 | I2 | Base input for TR2 (PNP); accepts logic-low or negative-going signals; biased with inverted polarity network. |
| 6 | O1 | Collector output for TR1 (NPN); active-high switching node; sources current when TR1 is on. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated dual-transistor topology | NPN+PNP pair in one die with independent bias networks - eliminates layout mismatch and timing skew between complementary switches. |
| Reduced component count | Removes four external bias resistors per channel - cuts BOM cost and placement time in automated assembly. |
| Ultra-small footprint | SOT666 package occupies only 1.92 mm² board area - ideal for wearables, sensor modules, and miniaturized IoT edge nodes. |
| Guaranteed DC current gain | hFE ≥ 100 at IC = 10 mA - ensures reliable saturation across industrial temperature range without gain-dependent design margins. |
| Thermal derating support | Rth(j-a) = 417 K/W (per device) - enables accurate junction temperature estimation for long-term reliability in sealed enclosures. |
Applications
| LED Driver Interface | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving dual-color (red/green) LED indicators from a single microcontroller port with opposite polarity requirements. IC Role / Device Role / Timing Role: PEMD13 acts as a bidirectional level translator and current switch - TR1 sources current for anode-connected LED, TR2 sinks current for cathode-connected LED. Use Value: Eliminates need for two separate transistors and four bias resistors, reducing PCB area by >60% versus discrete implementation. |
Use Scenario: Extending limited GPIO count on an ARM Cortex-M0+ MCU to control multiple enable lines for sensors and peripherals. IC Role / Device Role / Timing Role: Functions as a buffered digital output stage - accepts 3.3 V logic inputs and delivers rail-to-rail 5 V/24 V compatible outputs with defined slew control. Use Value: Provides consistent 100 mA drive capability per channel with <100 mV VCE(sat), ensuring minimal voltage drop in power-path enable functions. |
| Logic-Level Translator | Low-Power Sensor Interface |
|
Use Scenario: Interfacing 1.8 V FPGA I/O banks to 5 V industrial control signals in mixed-voltage systems. IC Role / Device Role / Timing Role: Serves as unidirectional voltage translator - TR1 converts low-voltage logic high to 5 V output; TR2 handles return-path acknowledgment. Use Value: VI(on)/VI(off) thresholds (0.9–1.3 V / 0.5–0.6 V) provide >300 mV noise immunity against supply ripple and crosstalk. |
Use Scenario: Enabling/disabling analog sensor modules (e.g., temperature, humidity) in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Acts as a low-quiescent-load power gate - TR1 controls VCC to sensor; TR2 monitors ready signal from sensor's open-drain output. Use Value: Built-in R1/R2 network draws <1 µA standby current per input, extending battery life beyond 5 years in sleep-mode operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMH13 | NPN/NPN configuration; identical R1/R2 values and SOT666 package; no PNP element. | Used where dual-sourcing or parallel drive is needed instead of complementary switching. | Select when both outputs require sourcing capability and no active-low sinking is required. |
| PEMB13 | PNP/PNP configuration; same bias network and package; lacks NPN transistor. | Suitable for high-side switching arrays or negative-rail referenced control buses. | Choose when system ground-referenced loads dominate and emitter-follower sourcing is preferred. |
Compared with PEMH13 and PEMB13, the PEMD13 uniquely provides true complementary NPN/PNP pairing in one package - enabling push-pull output stages, bidirectional bus control, and compact H-bridge pre-driver functions not achievable with same-polarity RETs.
Availability
PEMD13 is available at Aetrix Electronics and suitable for LED driver interfaces, microcontroller GPIO expansion, logic-level translation, and low-power sensor interface applications requiring stable component supply and long-term production continuity.
Supply support for PEMD13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient logic, discrete, and MOSFET devices, with manufacturing rooted in process innovation and automotive-grade quality systems.
The PEMD13 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to reduce design complexity and board space in digital interface and peripheral driver applications across consumer, industrial, and computing markets.
FAQ
What is the maximum allowable continuous current per transistor in the PEMD13?
The PEMD13 supports a maximum continuous output current of 100 mA per transistor (TR1 and TR2 individually), as confirmed in the Quick Reference Data and Limiting Values tables. This rating applies under Tamb ≤ 25 °C with proper PCB thermal relief; derating is required above 25 °C per the 417 K/W junction-to-ambient thermal resistance curve.
Can the GND1 and GND2 pins be connected together in a circuit?
Yes, GND1 and GND2 may be externally connected to a common ground plane, but they are not internally shorted. Doing so simplifies layout and enables shared reference for bidirectional signal paths - however, isolation should be maintained if TR1 and TR2 drive loads referenced to different supply domains (e.g., isolated 5 V and 24 V rails).
Does the PEMD13 support 1.8 V logic input levels reliably?
Yes - the TR1 NPN section has VI(on) = 0.9–1.3 V and VI(off) = 0.5–0.6 V, providing a 300–400 mV noise margin at 1.8 V logic high. Test data shows stable turn-on down to 0.9 V at 25 °C, making it compatible with 1.8 V CMOS outputs without level-shifting circuitry.
Is reflow soldering the only recommended assembly method for the SOT666 package?
Yes - the datasheet explicitly states that reflow soldering is the only recommended method for PEMD13. Hand soldering or wave soldering is not qualified due to thermal stress risks on the ultra-thin leadframe and internal die attach; the package outline and solder land pattern in Figure 18 are optimized exclusively for lead-free reflow profiles.
PEMD13,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 4.7kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMD13,115 FAQ
1.How can I place an order for PEMD13,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMD13,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMD13,115 reliable?
The price and inventory of PEMD13,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMD13,115 is usually 5 days.
3.What payment methods are accepted for PEMD13,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMD13,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMD13,115?
PEMD13,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMD13,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMD13,115?
For technical support, including PEMD13,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMD13,115 requirements.
6.How does Aetrix verify that PEMD13,115 is sourced from the original manufacturer or authorized distributors?
All PEMD13,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMD13,115 meets industry standards.
7.What is the process for return or replacement of PEMD13,115?
All PEMD13,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMD13,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMD13,115 part is unused and in its original packaging.
Return procedure for PEMD13,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMD13,115 Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

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PUMD12,115
Nexperia USA Inc.

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PUMD9,115
Nexperia USA Inc.

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PUMH9,115
Nexperia USA Inc.

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Nexperia USA Inc.

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DCX114EU-7-F
Diodes Incorporated

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PUMD13,115
Nexperia USA Inc.
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