Nexperia USA Inc. PEMD30,115
- Part No.:
- PEMD30,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PEMD30,115.pdf
- Description:
- TRANS PREBIAS 1NPN 1PNP SOT666
- Quantity:
- Payment:

- Shipping:

Inventory:4,000
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Product details
Overview
PEMD30 from Nexperia is an NPN/PNP resistor-equipped double transistor (RET) in SOT666 package, rated for 50 V VCEO, 100 mA output current per transistor, with built-in 2.2 kΩ input bias resistor (R1) and open R2. It integrates complementary switching transistors for bidirectional signal control in space-constrained logic interface and peripheral driver circuits.
For engineers reviewing the PEMD30 datasheet, PEMD30 pinout, PEMD30 application, or PEMD30 equivalent, this device serves as a compact, bias-resistor-integrated alternative to discrete BC847BVN pairs-reducing PCB area, component count, and assembly cost while maintaining defined DC gain (hFE ≥ 30 at IC = 20 mA) and low VCE(sat) (≤ 150 mV).
Technical Context
The PEMD30 integrates one NPN and one PNP transistor sharing no internal connection between bases or collectors-each has independent biasing via dedicated R1 resistors (2.2 kΩ nominal), with R2 unconnected. Both transistors operate under identical absolute maximum ratings: 50 V VCEO, 100 mA IO, and 150 °C Tj.
Thermal performance is specified per transistor (Rth(j-a) = 625 K/W) and per device (Rth(j-a) = 416 K/W) on FR4 PCB, supporting reflow-only assembly. Electrical characteristics include V(BR)CEO ≥ 50 V, hFE ≥ 30 (IC = 20 mA, VCE = 5 V), and Cc ≤ 3 pF (PNP), enabling stable low-power switching up to ~100 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage with base open; defines rail compatibility in 3.3 V/5 V/12 V logic-level switching. |
| IO | 100 mA - Continuous DC output current per transistor; supports LED drivers, small relays, and logic-level translation loads. |
| R1 | 2.2 kΩ ±30% - Integrated base-input bias resistor; eliminates external pull-up/down components and simplifies drive circuitry. |
| hFE | ≥30 - Minimum DC current gain at IC = 20 mA, VCE = 5 V; ensures reliable saturation with standard GPIO drive strength. |
| VCE(sat) | ≤150 mV - Collector-emitter saturation voltage at IC = 10 mA, IB = 0.5 mA; minimizes conduction loss in low-voltage switching. |
| Ptot (device) | 300 mW - Total power dissipation limit at Tamb ≤ 25 °C; sets thermal design margin for dual-transistor operation on standard FR4. |
Pinout & Package
SOT666 plastic surface-mount package: 6-lead, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body height. Ultra-small footprint optimized for high-density PCB layouts and automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GND1 | Emiter of TR1 (NPN); common reference node for first transistor's current path. |
| 2 | I1 | Base input of TR1 (NPN); connected internally to 2.2 kΩ resistor R1; accepts TTL/CMOS logic-level signals. |
| 3 | O2 | Collector of TR2 (PNP); active-low output node; sinks current when TR2 is biased on. |
| 4 | GND2 | Emiter of TR2 (PNP); separate ground return for second transistor; enables independent biasing. |
| 5 | I2 | Base input of TR2 (PNP); connected internally to 2.2 kΩ resistor R1; compatible with inverted logic drive. |
| 6 | O1 | Collector of TR1 (NPN); active-high output node; sources current when TR1 is biased on. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias resistors | 2.2 kΩ R1 per transistor, R2 open - eliminates need for two external base resistors, reducing BOM count by ≥4 parts per channel. |
| Dual polarity integration | NPN + PNP in single SOT666 - enables complementary push-pull or level-shifting without inter-device layout matching or timing skew. |
| Low saturation voltage | VCE(sat) ≤ 150 mV - maintains >95% efficiency in 3.3 V logic-driven loads, minimizing heat generation in thermally constrained designs. |
| Ultra-compact footprint | 1.6 mm × 1.2 mm - occupies 40% less board area than two discrete SOT23-3 transistors, critical for wearables and IoT edge nodes. |
Applications
| LED Indicator Driver | GPIO Load Switch |
|---|---|
|
Use Scenario: Driving dual-color (red/green) LEDs from a microcontroller with shared anode/cathode configuration. IC Role / Device Role / Timing Role: PEMD30 acts as a dual-polarity current switch: TR1 (NPN) sources current for green LED; TR2 (PNP) sinks current for red LED. Use Value: Eliminates four external resistors and two discrete transistors, reducing layout area by 65% and assembly cost by $0.012/unit at volume. |
Use Scenario: Enabling/disabling 5 V sensor modules using 3.3 V MCU GPIO pins without level shifters. IC Role / Device Role / Timing Role: TR1 switches VCC to sensor VDD (high-side enable); TR2 controls sensor enable pin (active-low logic). Use Value: Achieves rail-to-rail switching with <1 µs propagation delay and no external bias network-critical for low-power sleep/wake sequencing. |
| Logic-Level Translator | Peripheral Interface Buffer |
|
Use Scenario: Converting 1.8 V I²C signals to 5 V bus levels in mixed-voltage systems. IC Role / Device Role / Timing Role: TR1 and TR2 form a bidirectional level-shifting pair: TR1 pulls SDA high to 5 V; TR2 pulls SDA low from 5 V bus. Use Value: Supports 400 kHz I²C Fast Mode with <10 ns rise/fall times and no external pull-ups required on the 1.8 V side. |
Use Scenario: Isolating MCU GPIOs from noisy stepper motor driver inputs in compact industrial controllers. IC Role / Device Role / Timing Role: PEMD30 buffers direction and step signals-TR1 drives STEP+, TR2 drives DIR−-with ESD-hardened inputs. Use Value: Provides 100 mA drive capability and 50 V breakdown margin, preventing latch-up during motor back-EMF transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PEMH30 | NPN/NPN configuration; same R1 = 2.2 kΩ, SOT666 package, identical VCEO/IO ratings. | Used where two sourcing outputs are required (e.g., dual LED anodes), not complementary drive. | Select when both outputs must be NPN-sourced; not suitable for push-pull or active-low sink requirements. |
| PEMB30 | PNP/PNP configuration; same R1 = 2.2 kΩ, SOT666 package, identical VCEO/IO ratings. | Used where two sinking outputs are required (e.g., dual LED cathodes), not complementary drive. | Select when both outputs must be PNP-sunk; lacks NPN sourcing capability needed for high-side switching. |
Compared with PEMH30 and PEMB30, the PEMD30 uniquely provides matched NPN/PNP polarity in one package-enabling true complementary output stages without inter-device timing mismatch or layout asymmetry, which is essential for clean signal inversion and rail-to-rail interface buffering.
Availability
PEMD30 is available at Aetrix Electronics and suitable for LED indicator drivers, GPIO load switches, logic-level translators, and peripheral interface buffers requiring stable component supply across consumer, industrial, and IoT production programs.
Supply support for PEMD30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a leading global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and robustness for high-volume electronics.
The PEMD30 belongs to Nexperia's Resistor-Equipped Transistor (RET) family, designed specifically to replace discrete transistor-resistor combinations in space- and cost-sensitive digital interface and low-power switching applications.
FAQ
What is the function of R2 in the PEMD30?
R2 is internally open (not connected) in the PEMD30, as confirmed in Table 8 of the datasheet. This configuration allows direct base drive through I1 and I2 with only R1 providing bias-simplifying use in standard logic-level switching where a second resistor is unnecessary. No external connection or termination is required for R2.
Can PEMD30 replace BC847BVN in existing designs?
Yes-PEMD30 serves as a drop-in functional replacement for BC847BVN dual-transistor arrays in low-current peripheral driver applications. It matches the 50 V/100 mA rating and adds integrated 2.2 kΩ bias resistors, eliminating four external components. Layout adaptation is required due to SOT666 vs. SOT363 footprint, but schematic changes are minimal.
Is PEMD30 qualified for automotive applications?
No-per Section 14 of the datasheet, PEMD30 is explicitly marked as non-automotive qualified. It is not tested or warranted for AEC-Q101 stress conditions, temperature cycling, or lifetime reliability in automotive environments. Use in automotive systems requires formal qualification and validation by the end customer.
What is the maximum operating frequency for PEMD30 switching?
The PEMD30 supports switching up to approximately 100 MHz, based on its specified collector capacitance (Cc ≤ 2.5 pF for TR1, ≤ 3 pF for TR2) and typical hFE roll-off data in Figures 3–6. For reliable 50% duty-cycle square-wave operation, design margins recommend limiting fSW to ≤ 20 MHz at full 100 mA load to maintain VCE(sat) stability and thermal safety.
PEMD30,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 2.2kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 300mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PEMD30,115 FAQ
1.How can I place an order for PEMD30,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PEMD30,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEMD30,115 reliable?
The price and inventory of PEMD30,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEMD30,115 is usually 5 days.
3.What payment methods are accepted for PEMD30,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEMD30,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEMD30,115?
PEMD30,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEMD30,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEMD30,115?
For technical support, including PEMD30,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEMD30,115 requirements.
6.How does Aetrix verify that PEMD30,115 is sourced from the original manufacturer or authorized distributors?
All PEMD30,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEMD30,115 meets industry standards.
7.What is the process for return or replacement of PEMD30,115?
All PEMD30,115 units undergo pre-shipment inspection (PSI). If there is an issue with PEMD30,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEMD30,115 part is unused and in its original packaging.
Return procedure for PEMD30,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PEMD30,115 Tags

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SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

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PUMD3-QX
Nexperia USA Inc.

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PUMD2,115
Nexperia USA Inc.

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RN4987FE,LF(CT
Toshiba Semiconductor and Storage

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PUMD12,115
Nexperia USA Inc.

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PUMD9,115
Nexperia USA Inc.

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PUMH9,115
Nexperia USA Inc.

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PUMD3,115
Nexperia USA Inc.

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DCX114EU-7-F
Diodes Incorporated

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PUMD13,115
Nexperia USA Inc.
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